• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.3
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• pp.61-67
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• 2004

In micro hole punching process the burr occurs inevitably, but the burr must be minimized in order to improve the quality and accuracy of the product. In this study, magnetic field-assisted polishing technique is applied to remove the burr which exists in nozzles for ink-jet printer head and proved to be a feasible for deburring by experiment. The deburring characteristics of sheet metals was investigated changing with polishing time and magnetic abrasive size. After the deburring, the burr size has remarkably reduced and roundness of the hole also has improved.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.10a
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• pp.329-333
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• 2003

In micro hole punching process the burr occurs inevitably, but the burr must be minimized in order to improve the quality and accuracy of the product. In this study, magnetic field assisted polishing technique is applied to remove the burr which exists in nozzles for ink-jet printer head and proved to be a feasible for deburring by experiment. The deburring characteristics of sheet metals was investigated changing with polishing time. After the deburring, the burr size has remarkably reduced and roundness of the hole also has improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.31-34
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• 2000

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.21-26
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• 2015

CMP(Chemical Mechanical Polishing) Processes have been used to improve the planarization of the wafers in the semiconductor manufacturing industry. Polishing performance of CMP Process is determined by the chemical reaction of the liquid sol containing abrasive, pressure of the head portion and rotational speed of the polishing pad. However, frictional heat generated during the CMP process causes agglomeration of the particles and the liquidity degradation, resulting in a non-uniform of surface roughness and surface scratch. To overcome this chronic problem, herein, we introduced NaCl salt as an additive into silica sol for elimination the generation of frictional heat. The added NaCl reduced the zata potential of silica sol and increased the contact surface of silica particles onto the sapphire wafer, resulting in increase of the removal rate up to 17 %. Additionally, it seems that the silica particles adsorbed on the polishing pad decreased the contact area between the sapphire water and polishing pad, which suppressed the generation of frictional heat.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.6
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• pp.48-54
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• 2012

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.313-320
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.228-232
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• 2002

The rise throughput and the stability in the device fabrication can be obtained by applying chemical mechanical polishing(CMP) process in 0.18 ${\mu}m$ semiconductor device. However it does have various problems due to the CMP equipment. Especially, among the CMP components, process variables are very important parameters in determining removal rate and non-uniformity. In this paper, We studied the DOE(design of experiment) method for the optimized CMP process. Various process variations, such as table and head speed, slurry flow rate and down force, have investigated in the viewpoint of removal rate and non-uniformity. Through the above DOE results, we could set-up the optimal process parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.24-29
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• 2005

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.

• Tribology and Lubricants
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• v.35 no.6
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• pp.323-329
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• 2019

Sapphire is currently used as a substrate material for blue light-emitting diodes (LEDs). The market for sapphire substrates has expanded rapidly as the use of LEDs has extended into various industries. However, sapphire is classified as one of the most difficult materials to machine due to its hardness and brittleness. Recently, a lap-grinding process has been developed to combine the lapping and diamond mechanical polishing (DMP) steps in a single process. This paper studies, the effect of wafer surface roughness on the chemical mechanical polishing (CMP) process by pressure and abrasive concentration in the lap-grinding process of a sapphire wafer. In this experiment, the surface roughness of a sapphire wafer is measured after lap-grinding by varying the pressure and abrasive concentration of the slurry. CMP is carried out under pressure conditions of 4.27 psi, a plate rotation speed of 103 rpm, head rotation speed of 97 rpm, and slurry flow rate of 170 ml/min. The abrasive concentration of the CMP slurry was 20wt, implying that the higher the surface roughness after lapgrinding, the higher the material removal rate (MRR) in the CMP. This is likely due to the real contact area and actual contact pressure between the rough wafer and polishing pad during the CMP. In addition, wafers with low surface roughness after lap-grinding show lower surface roughness values in CMP processes than wafers with high surface roughness values; therefore, further research is needed to obtain sufficient surface roughness before performing CMP processes.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1990.11a
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• pp.36-40
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• 1990

세라믹재료는 ductility가 작아 그 강도가 균열의 가혹성, 즉 크기와 모양에 의하여 결정되는 특징을 가지고 있다. 한편 마모는 표면에 균열을 생성시킬 수 있기 때문에 강도에 큰 영향을 미칠 수 있다. 그러나 지금까지 강도에 미치는 마모의 영향은 잘 밝혀져 있지 않다. 따라서 본 연구에서는 세라믹재료중에서도 물리적 성질들이 잘 알려져 있는 알루미나를 택하여 마모기구를 관찰하고 마모가 강도에 미치는 영향을 관찰하였다. 소결후 고온등방가압 처리된 알루미나 소결체를 입수하여 3mmX4mmX40mm크기의 굽힘시험시편으로 가공하였다. 두개의 4mmX40mm면중에서 한명을 diamond paste $1\mu m$까지 사용하여 polishing하였다. 시편의 polishing된 면위에 질화규소 볼을 올려 놓고, 하중을 가한 상태에서 볼을 와복운동시켰다. 시편위에 형성되는 마모흔적의 길이를 16mm이상이 되도록 하였다. 왕복속도는 약 2 헤르쯔도 하였다. 하중은 300, 600, 900N으로 하였다. 윤활유로는 paraffin oil을 사용하였다. 마모시험이 끝난 시편을 광학현미경 및 주사전자현미경으로 관찰한 후, 4-점굽힘시험하여 강도를 구하였다. 4-점굽힘시험시 외부 및 내부 지지점간의 거리는 30mm, 10mm로 하였으며, cross head speed는 분당 0.5mm로 하였다.