• Environmental Engineering Research
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• v.12 no.5
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• pp.203-210
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• 2007

Since the emissions composition from the household products have potentially been associated with health risks for building occupants, the chemical composition emitted from the products should be surveyed. The current study identified the emission composition for 42 liquid household products, using a purge-and-trap method. This evaluation was done by classifying the household products into five product classes (deodorizers, household cleaners, color removers, pesticides, and polishes). Nineteen compounds were chosen on the basis of selection criteria. The quality control program for purge-and-trap and analytical systems included tests of laboratory blank Tenax traps and blank water samples, and the determination of calibration equation, measurement precision, method detection limit (MDL), and recovery. The number of chemicals varied according to the product categories, ranging from 4 for the product category of bleaches to 12 for the product categories of air fresheners and nail color removers. For all product categories, the emission composition and concentrations varied broadly according to product. It is noteworthy that most household products emit limonene: 19 of 25 cleaning products; 5 of 6 deodorizers; 1 of 3 pesticides; 3 of 3 color removers; and 4 of 5 polishes. It was suggested that the use of household products sold in Korea could elevate the formation of secondary toxic pollutants in indoor environments, by the reaction of limonene with ozone, which entered indoor environments or might be generated by indoor sources such as electronic air cleaning devices and copying machines.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.152-152
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• 2009

We investigate micro-tip properties as Ni-Co plating and CMP processes for MEMS probe card and units. The micro-tip are fabricated by using Ni-Co plating machine, lapping machine, and chemo-mechanical polisher. In order to get high conductive and reliable micro-tip, we control Co contents and thickness by CMP speed. We have found that about 20-25% of Co contents are required and have to lapping speed of 30 rpm. Also, we investigate photolithography and Ni-Co plating processes conditions for the one-step and the three-step micro-tips.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.1
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• pp.1-5
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• 2001

STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.723-725
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• 1998

STI CMP process are substituting gradually for LOCOS(Local Oxidation of Silicon) process to be available below sub-0.5um technology and to get planarized. The other hand, STI CMP process(especially STI CMP with RIE etch back process) has some kinds of defect like Nitride residue, Torn Oxide defect, etc. In this paper, we studied how to reduce Torn Oxide defects after STI CMP with RIE etch back process. Although Torn Oxide defects which occur on Oxide on Trench area is not deep and not sever, Torn oxide defects on Moat area is sometimes very deep and makes the yield loss. We did test on pattern wafers witch go through Trench process, APCVD process, and RIE etch back process by using an REC 472 polisher, IC1000/SUV A4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the root causes of torn oxide defects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.30-33
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter-level dielectrics (ILD). Especially, defects like micro-scratch lead to severe circuit failure, and affects yield. CMP slurries can contain particles exceeding $1{\mu}m$ size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particle agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectric(IMD)-CMP. The filter installation in CMP polisher could reduce defect after IMD-CMP. As a result of micro-scratches formation, it shows that slurry filter plays an important role in determining consumable pad lifetime.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.557-561
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• 2001

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integraded circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding 1㎛ in size, which could cause micro-scratch on the wafer surface. The large particles in these slurries may be caused by particles agglomeration in slurry supply line. To reduce these defects, slurry filtration method has been recommended in oxide CMP. In this work, we have studied the effects of filtration and the defect trend as a function of polished wafer count using various filters in inter-metal dielectrics(IMD)-CMP process. The filter installation in CMP polisher could reduce defects after IMD-CMP process. As a result of micro-scratch formation, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. We have concluded that slurry filter lifetime is fixed by the degree of generating defects.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.26-31
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• 2007

The goal of this study is to determine if High Pressure Micro Jet (HPMJ) conditioning can be used as a substitute for, or in conjunction with, conventional diamond pad conditioning. Five conditioning methods were studied during which 50 ILD wafers were polished successively in a 100-mm scaled polisher and removal rate (RR), coefficient of friction (COF), pad flattening ratio (PFR) and scanning electron microscopy (SEM) measurements were obtained. Results indicated that PFR increased rapidly, and COF and removal rate decreased significantly, when conditioning was not employed. With diamond conditioning, both removal rate and COF were stable from wafer to wafer, and low PFR values were observed. SEM images indicated that clean grooves could be achieved by HPMJ pad conditioning, suggesting that HPMJ may have the potential to reduce micro scratches and defects caused by slurry abrasive particle residues inside grooves. Regardless of different pad conditioning methods, a linear correlation was observed between temperature, COF and removal rate, while an inverse relationship was seen between COF and PFR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.1935-1946
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• 2022

The investigations of the coated-particles of nuclear fuel samples are carried out in three stages: front-end, irradiation in the reactor core, and post-irradiation examination. The front-end stage is the initial analysis of the failures rates of produced samples before they are placed in the reactor core. The purpose of the verification is to prepare the particles for an experiment that will determine the degree of damage to the coated particles at each stage. Before starting experiments with the samples, they must be properly prepared. Polishing the samples in order to uncover the inner layers is an important, initial experimental step. The authors of this paper used a novel way to prepare samples for testing - by applying an ion polisher. Mechanical polishing used frequently for sample preparations generates additional mechanical damages in the studied fuel particle, thus directly affecting the experimental results. The polishing methods were compared for three different coated particles using diagnostic methods such as Raman spectroscopy, scanning electron microscopy, and confocal laser scanning microscopy. Based on the obtained results, it was concluded that the ion polishing method is better because the level of interference with the structures of the individual layers of the tested samples is much lower than with the mechanical method. The same technique is used for the fuel particles undergone ion implantation simulating radiation damage that can occur in the reactor core.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.3
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• pp.338-351
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• 2005

Statement of problem. Accurate fit between the implant components is important because the misfit of the implant components results in frequent screw loosening, irreversible screw fracture, plaque accumulation, poor soft tissue reaction, and destruction of osseointegration. Purpose. This study is to evaluate the machining accuracy and consistency of the implant fixture/ abutment/screw interfaces of the internal connection system by using a Stereoscopic Zoom microscope and FE-SEM(field emission scanning electron microscope) Materials and methods. The implant systems selected in this study were internal connection type implants from AVANA(Osstem^{\circledR}), Bioplant(Cowell-Medi^{\circledR}), Dio(DIO^{\circledR}), Neoplant(Neobiotech 􀋓), Implantium(Dentium􀋓)systems. Each group was acquired 2 fixtures at random. Two piece type abutment and one piece type abutment for use with each implant system were acquired. Screw were respectively used to hold a two piece type abutment to a implant fixture. The implant fixtures were perpendiculary mounted in acrylic resin block. Each two piece abutment was secured to the implant fixture by screw and one piece abutment also secured to the implant fixture. Abutment/fixture assembly were mounted in liquid unsaturated polyester. All samples were cross-sectioned with grinder-polisher unit. Finally all specimens were analysed the fit between implant fixture/abutment/screw interfaces Results and conclusions. 1. Implant fixture/abutment/screw connection interfaces of internal connection systems made in Korea were in good condition. 2. The results of the above study showed that materials and mechanical properties and quality of milling differed depending on their manufacturing companies.