• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.

• 비파괴검사학회지
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• 제27권3호
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• pp.246-254
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• 2007

The scanning laser source (SLS) technique is a promising new laser ultrasonic tool for the detection of small surface-breaking defects. The SLS approach is based on monitoring the changes in laser-generated ultrasound as a laser source is scanned over a defect. Changes in amplitude and frequency content are observed for ultrasound generated by the laser over uniform and defective areas. The SLS technique uses a point or a short line-focused high-power laser beam which is swept across the test specimen surface and passes over surface-breaking or subsurface flaws. The ultrasonic signal that arrives at the Rayleigh wave speed is monitored as the SLS is scanned. It is found that the amplitude and frequency of the measured ultrasonic signal have specific variations when the laser source approaches, passes over and moves behind the defect. In this paper, the setup for SLS experiments with full B-scan capability is described and SLS signatures from small surface-breaking and subsurface flaws are discussed using a point or short line focused laser source.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 자성 및 자성재료 국제학술대회
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• pp.139-140
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• 2013

We investigate effect of a point defect on the pinning potential for a perpendicular magnetic domain wall based on the NEB method. We find that this method can give a reasonable value for the pinning potential and allows us to study the effect of various geometrical and magnetic properties on the pinning potential. In the presentation, we will discuss the effect of Ku and wire width on the pinning potential in detail.

• 전자공학회논문지D
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• 제35D권3호
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• pp.18-27
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• 1998

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2000년도 춘계학술대회논문집 - 한국공작기계학회
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• pp.115-120
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• 2000

This study is on the application the image processing algorithm for inspection of the aluminium mill strip surface defect. The image of surface defect data was obtained using the CCD camera with the digital signal board. The edge was found from the difference of pixel intensity between the normal image and defect image. Two step were taken to find the edge in the image processing algorithm. First, noise was removed by using the median filter in the image. Second, the edge was sharpened in detail by using the sharpening convolution filter in the image. Canny algorithm was used to defect the exact edge. The defect section was separated from the original image is to find the coordination point p1 and p2 which include the defect image

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1830-1832
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• 1999

고에너지 이온주입(1)에 기인한 격자 손상 발생 및 열처리에 따라 이들의 회복이 어느정도 가능한지에 대하여 측정 및 분석방법을 통하여 조사하였다. 그리고 본 실험에서는 이온주입시 형성되는 빈자리 결함(Vacancy defect)과 격자간 결함(interstitial defect)의 재결할(recombination)을 이용 점결합(point defect)를 감소 시킬 수 있는 effective RTA조건을 설정하여 well 특성을 개선하고자 하였다. 8inch p-type Si(100)기판에 pad oxide 100A을 형성한 후 NMOS 형성하기 위해 vtn${\sim}$p-well과 PMOS 형성을 위해 vtp$\sim$n-well을 이온주입 하였다. Mev damage anneal은 RTA(2)(Rapid Thermal Anneal)로 $1000\sim1150C$ 온도에서 $15\sim60$초간 spilt 하여 실험후 suprem-4 simulation data를 이용하여 실제 SIMS측정 분석결과를 비교하였으며 이온주입에 의해 발생된 격자손상이 열처리후 damage 정도를 알아보기 위해 T.W(Therma-Wave)을 이용하였으며 열처리후 면저항값은 4-point probe를 사용하였다. 이온주입후 열처리 전,후에 따른 불순물 분포를 SIMS(Secondary ion Mass Spectrometry)를 이용하여 살펴보았다. SIMS 결과로는 열처리 온도 및 시간의 증가에 따라서 dopant확산 및 활성화는 큰차이는 보이지 않고 오히려 감소하는 경향을 볼 수 있으며 또한 접합깊이와 농도가 약간 낮아지는 것을 볼 수 있었다. 결점(defect)을 감소시키기 위해서 diffusivity가 빠른 임계온도영역($1150^{\circ}C$-60sec)에서 RTA를 실시하여 dopant확산을 억제하고 점결점(point defect)의 재결합(recombination)을 이용하여 전위 (dislocation)밀도를 감소시켜 이온주입 Damage 및 면저항을 감소 시켰다. 이와 같은 특성을 process simulation(3)(silvaco)을 통하여 비교검토 하였다.

• 한국건축시공학회:학술대회논문집
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• 한국건축시공학회 2017년도 춘계 학술논문 발표대회
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• pp.266-267
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• 2017

As apartment buildings defect lawsuits become socioeconomic problems, an objective basis system for the term of warranty liability of reinforced concrete constructions is urgent. This study was carried out as a basic study for developing a basis system for the term of warranty liability. To do this, defect data actual collected in apartment complexes were collected and analyzed. As the result of checking the cumulative rate of defect occurrence in reinforced concrete construction by year, the point of time of reaching the 90% level was the 5th years, which was similar with the provision of the Apartment Building Management Act. However, the current Supreme Court precedent has decided that the term of warranty liability for the main structural parts in reinforced concrete construction shall be 10 years and the dispute is expected to continue in the future in the defect lawsuit.

• 한국산학기술학회논문지
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• 제3권3호
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• pp.165-169
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• 2002

반도체 소자의 기판 재료로 사용되고 있는 실리콘 웨이퍼는 그 정밀도가 매우 중요하다. 본 연구에서는 균일한 Dopant농도 분포를 얻을 수 있는 중성자 변환 Doping을 이용하여 실리콘에 인(P)을 Doping하는 연구를 수행하였다. 본 연구에서는 하나로 원자로를 이용하여 고저항(1000∼2000Ωcm) FZ실리콘 웨이퍼에 중성자 조사하여 저항의 변화를 관찰하였고, 중성자 조사시 발생하는 점결함을 분석하여 점결함이 저항 변화에 미치는 영향을 알아보았다. 중성자 조사 전 이론적 계산에 의해 HTS조사공은 5Ωcm, 20.1Ωcm이고 IP3조사공은 5Ωcm, 26.5Ωcm, 32.5Ωcm이었고, 중성자 조사 후 SRP로 측정한 결과 실제 저항값은 HTS-1 2.10Ωcm, HTS-2 7.21Ωcm이었고. IP-1은 1.79Ωcm, IP-2는 6.83Ωcm, 마지막으로 IP-3는 9.23Ωcm이었다. DLTS측정 결과 IP조사공에서 새로운 피크의 결함을 발견할 수 있었다. 또한 중성자 조사후의 저항변화는 열중성자량에 의존하며 조사공의 종류와는 무관하다.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.157-161
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• 2019

소재의 전기전도 거동과 열전도 거동을 독립적으로 제어하는 기술은 열전소재의 성능증대를 위한 효과적인 전략 중 하나로 인식되고 있다. 이를 구현하기 위해 다결정 소재가 근본적으로 포함하고 있는 결함구조와 열전소재의 물성과의 상관관계에 대한 수많은 연구가 진행되고 있으며, 최근 0 차원의 점결함 형성에 의해 전기전도 특성을 증대함과 동시에 열전도 특성을 저감하는 결과가 보고되고 있다. 본 논문에서는 점결함 형성에 의한 소재의 전기전도 거동 및 열전도 거동 변화에 대해 이론적 고찰을 진행하고, 벌크 열전소재에서 실험적으로 구현된 결과와 연계하여 고성능 열전소재 개발에 필수적인 소재설계 지침에 대한 실효적인 정보를 제공하고자 한다.