• 마이크로전자및패키징학회지
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• 제7권3호
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• pp.31-36
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• 2000

RF(radio Frequency)용 MCM(Multichip Module)-D 기판 내장형 인덕터를 개발하였다. MCM 기술은 고밀도 패키징 기술로서 주로 디지털회로에 많이 적용되어 왔으나, 최근에는 아날로그회로 및 디지털회로가 혼재된 혼성신호 및 초고주파 회로에도 적용되고 있다. 혼성신호에서는 능동소자 주변에 많은 수의 수동소자가 연결되므로 MCM-D 기판에 수동소자를 내장시키면 원가절감과 시스템의 크기 축소 및 경량화를 이를 수 있을 뿐 아니라, 성능과 신뢰성을 향상시킬 수 있다. 본 논문에서 MCM-D 기판은 Cu/감광성 BCB(Benzocyclobutene)를 각각 금속배선 및 절연막 재료로 사용하였고, 금속배선은 Ti/Cu를 각각 1000 $\AA$/3000 $\AA$으로 스퍼터한 후 fountain 방식으로 전기 도금하여 3 $\mu\textrm{m}$ Cu를 형성하였으며, 인덕터는 coplanar구조로 하여 기존의 반도체 공정을 이용하여 MCM-D기판에 인덕터를 안정적으로 내장시키고 전기적 특성을 측정하였다.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.133-140
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• 2019

열 사이클 조건이 전해 Cr/Ni-P 이중도금 시편의 접합강도 및 균열성장거동에 미치는 영향을 분석하였다. 전해 Ni-P 도금층을 열처리를 통해 결정화 시킨 후 전해 Cr 도금 후 한번 더 열처리한 결과, Cr/Ni-P 계면에서 상호확산으로 인해 Cr-Ni 고용체 band layer가 관찰되었다. 열 사이클 전 접합강도는 25.6 MPa이였으나, 1,000사이클 후 Cr 도금층의 균열 밀도 및 표면 거칠기 증가로 인해 도금층과 접착제 사이의 기계적 고착효과가 향상되어 접착제와 Cr 도금층 사이에서 박리되었고, 접합강도는 47.6 MPa로 점차적으로 증가하였다.

• 대한금속재료학회지
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• 제50권2호
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• pp.152-158
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• 2012

The effect of current waveform on Cu filling into TSV (through-silicon via) and the bottom-up ratio of Cu were investigated for three dimensional (3D) Si chip stacking. The TSV was prepared on an Si wafer by DRIE (deep reactive ion etching); and its diameter and depth were 30 and $60{\mu}m$, respectively. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. The current waveform was varied like a pulse, PPR (periodic pulse reverse) and 3-step PPR. As experimental results, the bottom-up ratio by the pulsed current decreased with increasing current density, and showed a value of 0.38 on average. The bottom-up ratio by the PPR current showed a value of 1.4 at a current density of $-5.85mA/cm^2$, and a value of 0.91 on average. The bottom-up ratio by the 3-step PPR current increased from 1.73 to 5.88 with time. The Cu filling by the 3-step PPR demonstrated a typical bottom-up filling, and gave a sound filling in a short time.

• 한국수소및신에너지학회논문집
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• 제29권6호
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• pp.549-558
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• 2018

The overall efficiency depend on the overpotential of the oxygen evolution reaction in alkaline water electrolysis. Therefore, it is necessary to research to reduce the oxygen evolution overpotential of electrodes. In this study, Ni-Zn-Fe electrodes were prepared by electroplating and the surface area was increased by Zn leaching process. Electroplating variables were studied to optimize the plating parameters(electroplating current density, pH value of electroplating solution, Ni/Fe content ratio). Ni-Zn-Fe electrode, which is electroplated in a modified Watts bath, showed 0.294 V of overpotential at $0.1A/cm^2$. That result is better than that of Ni and Ni-Zn plated electrodes. As the electroplating current density of the Ni-Zn-Fe electrode increased, the particle size tended to increase and the overpotential of oxygen evolution reaction decreased. As reducing pH of electroplating solution from 4 to 2, Fe content in electrode and activity of oxygen evolution reaction decreased.

• 마이크로전자및패키징학회지
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• 제24권3호
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• pp.77-81
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• 2017

Pulse electroplating of Ni-P alloy was studied to fulfill the material requirement to the advanced vertical probe tip in wafer probe card. The major concerns are for the electrical conductivity and yield strength. Plating parameters such as current density, duty cycle and solution components were examined to obtain the nanocrystal structure and proper percentage of phosphorus, leading to how to control the nanocrystal grain growth and precipitation of $Ni_3P$ after heat treatment. Among the parameters, the amount of phosphorus acid was the main factor affecting on the grain size and sheet resistance, and the amount of 0.1 gram was appropriate. Since hardness in Ni-P alloy is increased by as-plated nanocrystal structure plus precipitation of $Ni_3P$, the concentration of P less than 15 at% was better choice for the grain coarsening without minus in hardness value. The following heat treatment made grain growth and dispersion of precipitates adjustable to meet the target limit of resistance of $100m{\Omega}$ and hardness number of over 1000Hv. The Ni-P alloy will be a candidate for the substitute of the conventional probe tip material.

• 한국표면공학회지
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• 제37권2호
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• pp.86-91
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• 2004

Effect of potassium formate, glycine and oxalic acid in a sulfate solution on the deposit composition and current efficiency of trivalent chromium plating was studied. The trivalent chromium layers prepared by solutions with potassium formate, glycine and oxalic acid contain a few carbon inside. The solutions containing potassium formate, glycine and oxalic acid are relatively stable with pH change. The solution with the potassium formate shows 6-30％ current efficiency with current density, whereas, the solutions with oxalic acid and glycine show about 5％ current efficiency, respectively. The improved current efficiency is related to enough supply of chromium ions to the electrode due to the increase of pH at the front of electrode.

• Journal of Welding and Joining
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• 제32권3호
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.37-42
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• 2007

반도체 소자의 집적도가 높아짐에 따라 3D SiP에 대한 관심이 높아지고 전기도금법을 이용한 구리 via filling이 활발히 연구되어왔다. Via filling시 via 입구와 바닥에 전류밀도 차이로 인해 via 내부에 결함이 발생하기 쉽다. 여러 가지 유기물 첨가제와 전류인가 방식의 변화를 통한 via filling을 하였다. 첨가된 유기물은 PEG, SPS, JGB, PEI를 사용하였다. 유기물이 첨가된 용액을 이용하여 펄스와 역펄스 방법을 이용하여 via filling을 하였다. 유기물의 첨가에 따른 도금된 구리 입자의 크기 및 형상에 관하여 고찰하였으며 도금 후 via 시편의 단면을 FESEM으로 관찰하였다. JGB에 비하여 PEI를 사용한 경우 치밀한 도금층을 얻을 수 있었다. 2 step via filling을 사용한 경우 via filling 시간을 단축시킬 수 있었다.

• KSBB Journal
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• 제6권1호
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• pp.1-7
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• 1991

To produce economically important indole alkaloids by cell cultures, we selected protoplastsderived clones (protoclones) of vinca (Catharanthus roseus) for high yields of catharanthine and ajmalicine. Protoplasts were enzymatically isolated from suspension-cultured cells. The highest plating efficiency (1%) was obtained when protoplasts were plated at a density of 1$\times$105 protoplasts/ml in a culture medium solidified with 0.4% Seaplaque agarose. The growth rates of 40 protoclones subcultured on a solid medium varied over a wide range. Protoclone VPC-6, which had the highest growth rate, was observed to produce relatively high yields of catharanthine and ajmalicine when cultured in a liquid medium. Although the original cell line did not produce catharanthine at a detectable level by HPLC, protoclone VPC-10 produced it at a level of 5.9$\mu\textrm{g}$/g fresh weight of cells for 10 days of culture. Under the same conditions, protoclone VPC-15 produced ajmalicine at a level of 133.6$\mu\textrm{g}$/g, of which productivity was improved about ,3 times than that of the original cell line. The results indicate that differences in the growth rate and indole alkaloid yield among the protoclones reflect the somaclonal variation in suspnsion-cultured cells.

• 한국표면공학회지
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• 제41권4호
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• pp.163-168
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• 2008

The dental orthodontic bracket requires good mechanical properties, such as elastic strength and frictional resistance, combined with a high resistance to corrosion. The objective of this study was to investigate the effects of TiN and ZrN coating on corrosion resistance of orthodontic brackets using various electrochemical methods. Brackets manufactured by Ormco Co. were used, respectively, for experiment. Ion plating was carried out for coatings of bracket using Ti and Zr coating materials with nitrogen gas. Ion plated surface of each specimen was observed with field emission scanning electron microscopy(FE-SEM), energy dispersive Xray spectroscopy(EDS) and electrochemical tester. The corrosion potential of the TiN and ZrN coated bracket was comparatively high. The current density of TiN and ZrN coated bracket was smaller than that of non-coated bracket in 0.9% NaCl solution. Pit nucleated at angle of bracket slot.