• Title/Summary/Keyword: Plasma temperature

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Ion Flux Assisted PECVD of SiON Films Using Plasma Parameters and Their Characterization of High Rate Deposition and Barrier Properties

  • Lee, Joon-S.;Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.236-236
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    • 2011
  • Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

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A Study on the Carbonization and Strengthening of PAN Fiber by Microwave Plasma (마이크로웨이브 플라즈마를 이용한 탄화공정 및 PAN fiber의 강도 향상에 관한 연구)

  • Choi, Ji-Sung;Joo, Jung-Hoon;Lee, Hun-Su
    • Journal of the Korean institute of surface engineering
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    • v.45 no.2
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    • pp.89-94
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    • 2012
  • A study to replace a high temperature thermal carbonization process with microwave plasma process is carried for PAN fiber as a starting material. Near atmospheric pressure microwave plasma (1 Torr~45 Torr) was used to control to get the fiber temperature up to $1,000^{\circ}C$. Even argon is an inert gas, its plasma state include high internal energy particles; ion (15.76 eV) and metastable (11.52 eV). They are very effective to lower the necessary thermal temperature for carbonization of PAN fiber and the resultant thermal budget. The carbonization process was confirmed by both EDS (energy dispersive spectroscopy) of plasma treated fibers and OES (optical emission spectroscopy) during processing step as a real time monitoring tool. The same trend of decreasing oxygen content was observed in both diagnostic methods.

Effect of MoS$_2$ and $Fe_2O_3$ Additives on the Tribological Behavior of the Plasma Sprayed Zirconia Based Coatings (MoS$_2$$Fe_2O_3$ 첨가제가 지르코니아계 용사코팅층의 마모마찰 특성에 미치는 영향)

  • 신종한;임대순;안효석
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1997.10a
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    • pp.93-99
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    • 1997
  • High Temperature wear behavior of plasma sprayed ZrO$_2$ and MoS$_2$, $Fe_2O_3$ coatings were investigated for high temperature wear resistance applications. The MoS$_2$, $Fe_2O_3$ added powders containing 2.5, 5.0, 7.5, 10.0 mol% of $MoS_2$, $Fe_2O_3$ for plasma spray were made by spray drying method. Wear test were performed at temperature ranges from room temperature to 600$\circ$C. The microstructural change of coatings and the worn. surface were examined by SEM and XRD. In ZrO$_2$ coating, the coefficient of friction and wear amount of room temperature to 400$\circ$C was increased with temperature and decreased with temperature over 400$\circ$C. The coefficient of friction and wear amount of MoS$_2$ added coatings were increased with temperature, but those of $Fe_2O_3$ added coatings had lower coefficient of friction and higher wear resistance than ZrO$_2$ coating.

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A Two-dimensional Steady State Simulation Study on the Radio Frequency Inductively Coupled Argon Plasma

  • Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.246-252
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    • 2002
  • Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

Effect of Acvated Oxygen Plasma on the Crystallinity and Superconductivity of $Yba_2Cu_3-O_{7-x}$ Thin Films Prepated by Reactive Co-evaporation method

  • Chang, Ho-Jung;Kim, Byoung-Chul;Akihama, Ryozo;Song, Jin-Tae
    • Korean Journal of Materials Research
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    • v.4 no.3
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    • pp.280-286
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    • 1994
  • As-grown $YBa_2Cu_3O_{7-x}$ films on MgO(100)substrates were prepated by a reactive co-evaporation method, and effects of activated oxygen plasma on the crystallinity and superconductivity at substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$ were investigated. The film deposited under the activated oxygen plasma at the substrate temperature of $590^{\circ}C$ had a single crystal phase. Whereas, when films were deposited under only oxygen gas, they were not in perfect single crystal phase but with slight polycrystalline nature. When the substrate temperature was $590^{\circ}C$, $Tc_{zero}$'s were 83K and 80K for films with and without activated oxygen plasma, respectively. The critical temperature, the crystal structure and the surface morphology of as-grown films were found to be insensitive to the activated oxygen plasma which is introduced during deposition instead of oxygen gas, but the crystalline quality was improved somewhat by the introduction by the introduction of actvated oxygen plasma.

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Curing of meat batter by indirect treatment of atmospheric pressure cold plasma

  • Jo, Kyung;Lee, Juri;Lim, Yubong;Hwang, Jaejun;Jung, Samooel
    • Korean Journal of Agricultural Science
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    • v.45 no.1
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    • pp.94-104
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    • 2018
  • Nitrite is an essential additive for cured meat product. Plasma is ionized gas and reactive nitrogen species in plasma can be infused into meat batter and subsequently generate nitrites by reaction with water molecules after plasma treatment. However, the increase of nitrite in meat batter is limited with direct treatment of atmospheric pressure cold plasma because of the increase of meat batter temperature. Therefore, this study investigated the influence of indirect treatment of atmospheric pressure cold plasma on the physicochemical properties of meat batter. Meat batter was indirectly treated with plasma at 1.5 kW for 60 min. The pH of meat batter decreased while the temperature increased with plasma treatment time. The total aerobic bacterial count of meat batter was not affected by plasma treatment. The nitrite content of meat batter was increased to 377.68 mg/kg after 60 min of plasma treatment. The residual nitrite content of cooked meat batter also increased with plasma treatment time. The CIE $a^*$-value of cooked meat batter increased. As plasma treatment time increased, lipid oxidation tended to increase and protein oxidation significantly increased. According to these results, the indirect treatment of atmospheric pressure cold plasma can be used as a new curing method for replacing synthetic nitrite salts.

Temperature Field and Emission Spectrum Measurement of High Energy Density Steam Plasma Jet for Aluminum Powder Ignition (알루미늄 분말 점화용 고밀도 스팀 플라즈마 제트 온도장 및 방출 스펙트럼 측정)

  • Lee, Sanghyup;Lim, Jihwan;Lee, Dohyung;Yoon, Woongsup
    • Journal of the Korean Society of Propulsion Engineers
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    • v.18 no.1
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    • pp.26-32
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    • 2014
  • In this study, DC (Direct current) type steam plasma igniter is developed for effective ignition of high-energy density metal aluminum and gas temperature is measured by emission spectrum of OH radical. Because of the ultra-high gas temperature, the DC plasma jet is measured by Boltzmann plot method which is the non-contact optical technique and spectrum comparison-analysis. And both methods were applied to experiment after accurate verification. As a result, we could identify that plasma jet temperature is 2900 K ~ 5800 K in the 30 mm range from the nozzle tip.

Study of ALD Process using the Line Type Plasma Source (라인형 플라즈마 소스를 이용한 ALD 공정 연구)

  • Kwon, Gi Chung;Jo, Tae Hoon;Choi, Jin Woo;Song, Sae Yung;Seol, Jae Yoon;Lee, Jun Sin
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.4
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    • pp.33-35
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    • 2016
  • In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

Effects of Color Depth on Wool and Silk Fabrics Treated Sputter Etching (Sputter etching에 의한 양모, 견직물의 농색효과)

  • Cho, Hwan;Gu, Kang
    • Textile Coloration and Finishing
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    • v.6 no.3
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    • pp.44-51
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    • 1994
  • Wool and silk fabrics dyed with C.l. Acid Black 155 were subjected to sputter etching and exposed to a low temperature argon plasma. Color depth of shade of the fabrics increased considerably, but sputter etching was more effectively than argon low temperature plasma treatment. And measured for any significant chemical modification by ESCA (XPS). Sputter etching and argon low temperature plasma treatments incorporated oxygen atoms into the surface.

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EFFECT OF ENVIRONMENTAL TEMPERATURE AND FEED INTAKE ON PLASMA CONCENTRATION OF THYROID HORMONES IN DAIRY HEIFERS

  • Purwanto, B.P.;Fujita, M.;Nishibori, M.;Yamamoto, S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.4 no.3
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    • pp.293-298
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    • 1991
  • A study was conducted to determine the effect of environmental temperature and level of food intake on plasma concentration of thyroid hormones. Three dairy heifers were used in an experiment which consisted of three levels of chamber temperature (10, 20 and $30^{\circ}C$) and three levels of food intake (100, 75 and 50% of recommended requirements). The analysis showed significant effects of environmental temperature on plasma triiodothyronine concentration, rectal temperature, respiration rate and heart rate but not on heat production. The range of plasma triiodothyronine was 2.51~1.79 ng/ml when the environmental temperature varied from 10 to $30^{\circ}C$. Effects of feed intake level were significant for heart rate and heal production. Heat production decreased from 25.9 to $20.0kJ/kg^{0.75}{\cdot}h$ when the TDN intake decreased from 66.3 to $35.1g/kg^{0.75}{\cdot}d$. There was no interactive effect of environmental temperature and feed intake level. Plasma triiodothyronine concentration decreased under high environmental temperature without any changes in heat production. The effects of environmental temperature and feed intake level on the physiological function of thyroid gland, as indicated by the relative circulating rate of thyroid hormones, were found to be clear.