• Asian-Australasian Journal of Animal Sciences
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• v.22 no.12
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• pp.1703-1708
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• 2009

Deproteinization has been recognized as a prerequisite for amino acid analysis of plasma samples. For plasma stored at room temperature, delaying deproteinization for 30, 60 or 120 minutes did not result in significant changes in the mean CV (coefficient of variation), which ranged from 4.4 to 5.6%. However the mean CV of aspartic acid, ${\alpha}$-aminoadipic acid, alanine and lysine was about 10%. When the plasma was stored frozen at -20${^{\circ}C}$, the CV was increased at 0 and 120 minutes after thawing, to 12.4% (range, 4.1 to 35.3%) and 8.0% (2.5 to 30.7%), respectively. The concentrations in plasma during storage at room temperature of all the amino acids analyzed showed significant changes. In plasma stored for 30 minutes at room temperature, 17 amino acids increased in concentrations and two decreased. Extending this period to 60 or 120 minutes increased the instability as compare to the reference group. Storing plasma at -20${^{\circ}C}$ for 2 weeks resulted in significantly greater changes in the amino acid concentrations than at room temperature. On extending the storage time at room temperature, after thawing, to 30, 60, and 120 minutes, 21, 20, and all 22 amino acids respectively changed significantly (p<0.01). The present study indicates that methodological errors occur in the concentrations determined for all amino acids when plasma is left at room temperature. The storage of frozen non-deproteinized plasma accompanied more significant changes in most amino acid concentrations and thus should be avoided. Deproteinization should be performed as soon as possible after plasma collection.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.148-152
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• 2005

Atmospheric low-temperature plasma was produced using dielectric barrier discharge (DBD) plate-type plasma reactor and high frequency of 13.56 Hz. The surfaces of polyimide films for insulating and packaging materials were treated by the atmospheric low-temperature plasma. The contact angle of 67$^{\circ}$ was observed before the plasma treatment. The contact angle was decreased with deceasing the velocity of plasma treatment. In case of oxygen content of 0.2 %, electrode gap of 2 mm, the velocity of plasma treatment of 20 mm/sec, and input power of 400 W, the minimum contact angle of 13$^{\circ}$ was observed. The chemical characteristics of polyimide film after the plama treatment were investigated using X-ray photoelectron spectroscopy (XPS), and new carboxyl group bond was observed. The surfaces of polyimide films were changed into hydrophilic by the atmospheric low-temperature plasma. The polyimide films having hydrophilic surface will be very useful as a packaging and insulating materials in electronic devices.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.357-362
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• 2008

The 2-step low temperature plasma processes (the combined carburizing and post-nitriding) were carried out for improving both the surface hardness and corrosion resistance of AISI 316L stainless steel. The effects of processing time and temperature on the surface properties during nitriding step were investigated. The expanded austenite (${\gamma}_N$) was formed on all of the treated surface. The thickness of ${\gamma}_N$ was increased up to about $20{\mu}m$ and the thickness of entire hardened layer was determined to be about $40{\mu}m$. The surface hardness reached up to $1,200HV_{0.1}$ which is about 5 times higher than that of untreated sample ($250HV_{0.1}$). The thickness of ${\gamma}_N$ and concentration of N on the surface were increased with increasing processing time and temperature. The corrosion resistance in 2-step low temperature plasma processed austenitic stainless steels was enhanced more than that in the untreated austenitic stainless steels due to a high concentration of N on the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Journal of Welding and Joining
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• v.20 no.4
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• pp.498-504
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• 2002

Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Textile Coloration and Finishing
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• v.23 no.3
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• pp.195-200
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• 2011

Silicone-coated fabric were treated by oxygen low temperature plasma to improve the adhesion. The surface of silicone-coated fabric was modified with gaseous plasma of several discharge power in the presence of oxygen gas at 1Torr pressure. Oxygen plasma treatment introduces oxygen-containing functional groups and micro-pittings on the silicone-coated fabric surface. The treated fabrics with oxygen low temperature plasma were measured by contact angle analyzer and XPS(X-ray photoelectron spectroscopy), and interfacial adhesion was measured by T-peel test. The surface of fabric was investigated by SEM photographs. The chemical and physical modification of the surface wettabillity by plasma treatment can increase the adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.144-144
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• 2011

Diagnostics of plasma density and temperature play an important role for monitoring plasma processing and Laser Thomson scattering is a one of the most accurate diagnostic technique for measuring plasma density and temperature because of none-perturbation to plasma among various diagnostic techniques invented to measure plasma density and temperature. I will briefly review Laser Thomson scattering experiment performed in KRISS and difficulties for measuring the electron velocity distribution such as Gaussian due to low signal-to-noise ratio with showing results that we got until now. This work is an intermediate step in a process that we will get a reliable data which shows physical phenomenon of plasma compared with other diagnostic techniques and results.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.