• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• 한국표면공학회지
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• 제29권5호
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.182-182
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• 2012

Plasma etching is used in various semiconductor processing steps. In plasma etcher, optical- emission spectroscopy (OES) is widely used for in-situ endpoint detection. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. Because of these problems, the object is to investigate the suitability of using plasma impedance monitoring (PIM) and self plasma optical emission spectrocopy (SPOES) with statistical approach for in-situ endpoint detection. The endpoint was determined by impedance signal variation from I-V monitor (VI probe) and optical emission signal from SPOES. However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ and SiNx layers are etched by fluorocarbon on inductive coupled plasma (ICP) etcher, if the proportion of $SiO_2$ and SiNx area on Si wafer are small. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance monitoring is compared with optical emission spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2001년도 춘계학술발표대회 논문개요집
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• pp.11-13
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• 2001

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 춘계학술발표대회 초록개요집
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• pp.15-17
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• 1998

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 1998년도 춘계학술발표대회 초록개요집
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• pp.18-19
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• 1998

• 한국레이저가공학회지
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• 제17권2호
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• pp.1-4
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• 2014

With the PEO(Plasma electrolytic oxidation) surface treatment, the oxide film of aluminum alloy is growing in a short time. The reflectance measurement to find the oxygen atoms in the oxide could be investigated. In order to form a thicker oxide film, the PEO surface treatment should be uniformly controlled in processing time.

• 한국염색가공학회:학술대회논문집
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• 한국염색가공학회 2009년도 학술발표대회
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• pp.43-44
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• 2009

Fabrics for Digital Textile Printing (DTP) are different from it of general textile printing. It is necessary to pre-treatment of chemical agents for desired quality. But this process does not correspond with simplification of DTP processing. In this research, we pre-treated of cotto is necessary to pre-treatment of chemical agents for desired quality. But this process does not correspond with simplification of DTP processing. In this research, we pre-treated of cotton fabric for DTP by atmosphere plasma treatment and we understood that pre-treatment of fabric by atmosphere plasma treatment was more simple DTP process.