• Title/Summary/Keyword: Plasma post-treatment

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Characteristics of Low Dielectric Constant SiOF Thin Films with Post Plasma Treatment Time (플라즈마 후처리 시간에 따른 저유전율 SiOF 박막의 특성)

  • Lee, Seok Hyeong;Park, Jong Wan
    • Journal of the Korean Vacuum Society
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    • v.7 no.3
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    • pp.267-267
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    • 1998
  • The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films have been of interest due to their lower dielectric constant and compatibility with existing process tools. However instability issues related to bond and increasing dielectric constant to water absorption when the SiOF films was exposured to atmospheric ambient. Therefore, the purpose of this research is to study the effect of post oxygen plasma treatment on the resistance of moisture absorption and reliability of SiOF film. Improvement of moisture absorption resistance of SiOF film is due to the forming of thin SiO₂layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the number of Si-F bonds that tend to associate with OH bonds. However, the dielectric constant was increased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and 300℃ of substrate temperature.

Stabilizing Properties of SiOF Film with Low Dielectric Constant by $N_2O$ Plasma Annealing ($N_2O$ 플라즈마 열처리에 의한 저유전율 SiOF 박막의 물성 안정화)

  • Kim, Yoon-Hae;Lee, Seok-Kiu;Kim, Sun-Oo;Kim, Hyeong-Joon
    • Korean Journal of Materials Research
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    • v.8 no.4
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    • pp.317-322
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    • 1998
  • The stabilization of low dielectric constant SiOF films prepared by conventional PECVD using TEOS and $C_2F_6$ was evaluated by the $N_2O$-plasma post-deposition annealing. Properties of SiOF film became unstable when it was air-exposed or heat-treated. Water absorption of SiOF films was increased as F content was increased due to the for¬mation of F -Si- F bonds. Also F content of SiOF films decreased after heat treatment. $N_2O$-plasma post-deposition annealing was proved to be effective on stabilizing SiOF films. which was mainly due to the formation of thin SiON layer near the top surface of films. However. the value of dielectric constant was greatly increased again when $N_2O$-plasma post-deposition annealing was done for a long time. To stabilize the SiOF films without an increase of dielec¬tric constant by $N_2O$- plasma post-deposition annealing. the annealing time should be kept the minimum value. to which stabilizing effects against air environment and heat treatment were preserved.

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The Effect of Exogenous Estrogen on the Pregnant Rats (Estrogen투여가 임신 rat에 미치는 영향)

  • 김영흥;송문용
    • Journal of Veterinary Clinics
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    • v.15 no.1
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    • pp.83-93
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    • 1998
  • The purposes of the present study were to evaluate the effect of estrone on the prevention of implantation and pregnancy and the concentrations of estradiol and progesterone or sodium and potassium in the plasma or uterine fluid of pregnant rats injected a single dose of 0, 0.1, 0.4 or 1.0 mg on days 5, 9, or 13 of pregnancy. The body weight gains of pregnant rats were significantly decreased in administering estrone on day 5 of pregnancyi no effect obtained on days 9 or 13. Numbers of viable fetuses were significantly decreased and pre- and post-implantation loss increased by administering estrone 0.1, 0.4 or 1.0 mg and numbers of implantation sites significantly increased by administering estrone 0.1 mg but significantly decreased or not occurred by 0.4 or 1.0 mg on day 5 of pregnancy, respectively, but no effect obtained on days 9 or 13. Plasma estradiol concentrations of pregnant rats were significantly increased on 1, 2 or 18 days after treatment with estrone (1.4 or 1.0 mg and 3 days after 0.4 mg on day 5 of pregnancy, respectively. But plasma progesterone concentrations had no effect on the treatment with estrone. Plasma sodium contents were significantly increased on 1 day after treatment with estrone 0.1 or 1.0 mg and 3 days after 0.1 mg on day 5 of pregnancy, respectively, except potassium content were no detectable change. Sodium contents in uterine fluid were significantly increased on 1 day after treatment with estrone 1.0 mg and 3 days after 0.1, 0.4 or 1.0 mg on day 5 of pregnancy, respectively. And potassium contents were significantly increased on 1 or 2 days after treatments with estrone 0.1 mg but significantly decreased on 3 days after 0.4 or 1.0 mg on day 5 of pregnancy, respectively. It is suggested that the prevention of implantation and failure of pregnancy could be induced by treatment with estrone 0.4 mg on day 5 of pregnancy and might be interrelated with changes of plasma estradiol concentration and sodium and potassium contents in uterine fluid.

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Correlation between Pharmacokinetics of Praziquantel and Extermination of Microcotyle sebastis (Monogenea) in Cultured Rockfish Sebastes schlegeli

  • Kim Chun Soo;Kim Ki Hong
    • Fisheries and Aquatic Sciences
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    • v.4 no.4
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    • pp.197-200
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    • 2001
  • To investigate the re-treatment time of Microcotyle sebastis by oral administration of praziquantel, the residue levels of praziquantel in plasma of rockfish Sebastes schlegeli administered orally at a dose of 200 mg/kg B.W. were analyzed by reversed-phase HPLC, and the concentrations of praziquantel in the plasma were correlated with the extermination of M. sebastis. The absorption and depletion of praziquantel in the blood of rockfish were fast and the residual concentrations of praziquantel declined below $4\mu g/mL$ within 24 hr post treatment. Most of worms were exterminated within 3 hr after oral administration of praziquantel, however, a small number of M. sebastis were not killed by the treatment until end of the experiment. Considering fast drop of praziquantel in blood and extermination pattern of M. sebastis in the present results, retreatment at an interval of 9-12 hr would be effective for eradication of M. sebastis.

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The effect of plasma treatment on the $SiO_2$ film fabricated without substrate heating for flexible electronics (플라스틱 기판 사용을 위해 기판을 가열하지 않고 증착한 $SiO_2$ 절연막의 플라즈마 처리 효과)

  • Kuk, Seung-Hee;Kim, Sun-Jae;Han, Sang-Myeon;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1203-1204
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    • 2008
  • 본 논문에서는 ICP-CVD(Inductively Coupled Plasma Chemical Vapor Deposition)를 이용해 기판을 가열하지 않고 증착한 $SiO_2$ 절연막의 플라즈마 처리 효과를 분석하였다. 플라즈마 처리를 하지 않은 $SiO_2$ 절연막의 경우 평탄화 전압이 -7.8V, 유효 전하 밀도가 $4.77{\times}10^{13}cm^2$로 열악한 특성을 보였다. 이를 개선하기 위해 헬륨 플라즈마 전처리(Pre-treatment)와 수소 플라즈마 후처리(Post-treatment)를 통해서 $SiO_2$ 절연막의 전기적인 특성을 개선하였다.

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In-situ rf treatment of multiwall carbon nanotube with various post techniques for enhanced field emission

  • Ahn, Kyoung-Soo;Kim, Jun-Sik;Kim, Ji-Hoon;Kim, Chae-Ok;Hong, Jin-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.859-862
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    • 2003
  • Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

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The Characteristics of the Oxide Layer Produced on the Plasma Nitrocarburized Compound Layer of SCM435 Steel by Plasma Oxidation (플라즈마 산질화처리된 SCM435강의 표면경화층의 미세조직과 특성)

  • Jeon Eun-Kab;Park Ik-Min;Lee Insup
    • Korean Journal of Materials Research
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    • v.14 no.4
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    • pp.265-269
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    • 2004
  • Plasma nitrocarburising and post oxidation were performed on SCM435 steel by a pulsed plasma ion nitriding system. Plasma oxidation resulted in the formation of a very thin ferritic oxide layer 1-2 $\mu\textrm{m}$ thick on top of a 15~25 $\mu\textrm{m}$ $\varepsilon$-F $e_{2-3}$(N,C) nitrocarburized compound layer. The growth rate of oxide layer increased with the treatment temperature and time. However, the oxide layer was easily spalled from the compound layer either for both oxidation temperatures above $450^{\circ}C$, or for oxidation time more than 2 hrs at oxidation temperature $400^{\circ}C$. It was confirmed that the relative amount of $Fe_2$$O_3$, compared with $e_3$$O_4$, increased rapidly with the oxidation temperature. The amounts of ${\gamma}$'-$Fe_4$(N,C) and $\theta$-$Fe_3$C, generated from dissociation from $\varepsilon$-$Fe_{2-3}$ /(N,C) phase during $O_2$ plasma sputtering, were also increased with the oxidation temperature.e.

Effects of Post Annealing on the Properties of ZnO:Al Films Deposited by RF-Sputtering (RF-Sputtering 법을 이용한 ZnO:Al 박막의 후 열처리에 따른 특성 변화)

  • Lee, Jae-Hyeong;Lee, Dong-Jin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.9
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    • pp.789-794
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    • 2008
  • Zinc oxide (ZnO) has been widely studied for its practical applications such as transparent conduction electrodes for flat panel displays and solar cells. Especially, ZnO films show good chemical stability against hydrogen plasma, absence of toxicity, abundance in nature, and then suitable for photovoltaic applications. However, the fabrication process of thin film solar cells require a high substrate temperature and/or post heat treatment. Therefore, the layers have to withstand high temperatures, requiring an excellent stability without degrading their electronic and optical properties. In this paper, we investigated the stability of zinc oxide (ZnO) films doped with aluminum and hydrogen. Doped ZnO films were prepared by r.f. magnetron sputter and followed by heat treatment at different temperatures and for various times.

Effects of Oxidative Stress Induced by Diquat on Arginine Metabolism of Postweaning Pigs

  • Zheng, Ping;Yu, Bing;Lv, Mei;Chen, Daiwen
    • Asian-Australasian Journal of Animal Sciences
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    • v.23 no.1
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    • pp.98-105
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    • 2010
  • A total of 16 crossbred post-weaning pigs (10.64${\pm}$0.27 kg BW) were individually penned and assigned to one of two treatments to investigate the influences of diquat-induced oxidative stress on performance and arginine metabolism. Pigs in the oxidative stress group were injected intra-peritoneally with 10 mg/kg BW of diquat, while the control group were injected with isotonic saline. All pigs were fed ad libitum. The experiment lasted for 7 days. The results indicated that compared with control treatment, oxidative stress induced by diquat significantly decreased average daily gain, intake and feed conversion. The treatment decreased activities of antioxidant enzymes, increased concentration of malondialdehyde in plasma, increased cationic amino acid transporter-1 mRNA level and activity of ornithine aminotransferase and concentrations of arginine and citrulline in the jejunum, decreased the concentrations of arginine in plasma and kidney, and decreased induced nitric oxide synthase mRNA level. It is concluded that oxidative stress induced by diquat can influence absorption and metabolism of arginine and consequently modify the requirement of arginine for post-weaning pigs.