• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.19-25
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• 1999

The photoreceptor films with double layer structure were prepared by the plasma polymerization and the dip-coating method. The blocking layer was coated with A1$_2$O$_3$ on the Al substrate and the charge generation layer was formed by H$_2$ phthalocyanine (H$_2$Pc). Poly 9-Vinylcarbazole was used as a charge transport layer. H$_2$Pc film prepared by the vacuum evaporation had absorption peaks on 613.6[nm] and 694.8[nm], and H$_2$Pc film prepared by the plasma polymerization had a dull peaks between 600 and 700[nm]. The surface potential of PVCz increased with increasing the applied voltage and the thickness of PVCz. The dark decay characteristic, the light decay time and the residual time increased with increasing the thickness of PVCz. The surface charge of PVCz of 15[${\mu}{\textrm}{m}$] thickness was 134[nc/$\textrm{cm}^2$] at the surface potential of -600[V] and the charge generation efficiency of H$_2$Pc was 0.034.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.387-392
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• 2005

For the production of further functional bio-degradable plastic(polybutylene succinate:PBS) with $TiO_{2}$ as photocatalyst, which shows the decomposition of detrimental organic compound and pollutant under ultraviolet irradiation, we attempted to prepare $TiO_{2}$ coatings on PBS substrate by HVOF and plasma spraying techniques under various conditions. The microstructures of coatings were characterized with SEM and XRD analysis, and the photocatalytic efficiency of coatings was evaluated through the photo degradation of gaseous acetaldehyde. The effects of primary particle size and spraying parameters on the formation behavior, photo catalytic performance and mechanical characteristics of the coatings have been investigated. The results indicated that with respect to both the HVOF sprayed $P_{200}$ and $P_{30}$ coatings, the high anatase ratio off 100% can be achieved regardless of fuel gas pressure. On the other hand, the HVOF sprayed $P_{7}$ coating exhibited largely decreased anatase ratio (from 100% to 49.1%) with increasing the fuel gas pressure, which may be attributed to the much higher susceptibility to heat of 7nm agglomerated powder. In terms of photocatalytic efficiency, HVOF sprayed $P_{200}$ and $P_{30}$ coatings seem to predominate as compared to that of plasma sprayed $P_{200}$ coatings owing to the higher anatase ratio. However, the HVOF sprayed $P_{7}$ coatings didn't show the photo catalytic activity, which may result from the extremely small reaction surface area to the photo-catalytic activity and low anatase ratio. Such functional PBS with new roles is expected to cosiderably contribute to the reduction of aggravated environmel problem.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.51-52
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• 2015

Organic light emitting diode (OLED) 나 organic photovoltaic device (OPV)와 같은 유기소자에 전극으로 쓰이고 있는 indium tin oxide (ITO)는 유연한 디바이스에 적용하기에는 유연성이 떨어진다는 문제가 있다. 이를 해결하기 위해서 ITO를 대체할 수 있는 CNT, Graphene, AgNWs, 전도성 고분자 등의 투명전극에 관한 연구가 활발히 진행되고 있다. 그러나 CNT, Grapene, 전도성 고분자는 여전히 전기적 특성이 좋지 못하기 때문에 차세대 투명전극으로 사용되기는 어려움이 있다. 반면에 AgNWs는 용액공정으로 제조 단가가 비교적 저렴하며, 높은 전기전도도 특성과 우수한 유연성을 가지는 투명 전극이기 때문에 많은 주목을 받고 있다. 그러나 NW-NW간의 접촉저항이 높아 전도성이 저하된다는 문제점과 Environmental stability가 좋지 못하다는 단점이 여전히 존재한다. 본 연구에서는 AgNW 전극 위에 플라즈마처리를 진행하여 AgNW의 전도성과 Stability를 향상시키고자하였다. 플렉서블한 PET기판위에 AgNW 전극을 Spray Coating하여 균일하게 전극을 형성하였고, 플라즈마 처리를 통해서 기판의 변형없이 AgNW의 저항을 45%이상 향상시켰으며, Stability 또한 아무것도 처리하지 않은 AgNW에 대비하여 2배 이상 향상된 것을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.563-575
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• 2006

Ti(C,N) films are synthesized by pulsed DC plasma enhanced chemical vapor deposition (PEMOCVD) using metal-organic compounds of tetrakis diethylamide titanium at $200-300^{\circ}C$. To compare plasma parameter, in this study, $H_2$ and $He/H_2$ gases are used as carrier gas. The effect of $N_2\;and\;NH_3$ gases as reactive gas is also evaluated in reduction of C content of the films. Radical formation and ionization behaviors in plasma are analyzed in-situ by optical emission spectroscopy (OES) at various pulsed bias voltages and gas species. He and $H_2$ mixture is very effective in enhancing ionization of radicals, especially for the $N_2$. Ammonia $(NH_3)$ gas also highly reduces the formation of CN radical, thereby decreasing C content of Ti(C, N) films in a great deal. The microhardness of film is obtained to be $1,250\;Hk_{0.01}\;to\;1,760\;Hk_{0.01}$ depending on gas species and bias voltage. Higher hardness can be obtained under the conditions of $H_2\;and\;N_2$ gases as well as bias voltage of 600 V. Hf(C, N) films were also obtained by pulsed DC PEMOCYB from tetrakis diethyl-amide hafnium and $N_2/He-H_2$ mixture. The depositions were carried out at temperature of below $300^{\circ}C$, total chamber pressure of 1 Torr and varying the deposition parameters. Influences of the nitrogen contents in the plasma decreased the growth rate and attributed to amorphous components, to the high carbon content of the film. In XRD analysis the domain lattice plain was (111) direction and the maximum microhardness was observed to be $2,460\;Hk_{0.025}$ for a Hf(C,N) film grown under -600 V and 0.1 flow rate of nitrogen. The optical emission spectra measured during PEMOCVD processes of Hf(C, N) film growth were also discussed. $N_2,\;N_2^+$, H, He, CH, CN radicals and metal species(Hf) were detected and CH, CN radicals that make an important role of total PEMOCVD process increased carbon content.

• Korean Journal of Materials Research
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• v.30 no.11
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• pp.573-580
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• 2020

YAG (Yttrium Aluminum Garnet, Y₃Al₅O₁₂) has excellent plasma resistance and recently has been used as an alternative to Y₂O₃ as a chamber coating material in the semiconductor process. However, due to the presence of an impurity phase and difficulties in synthesis and densification, many studies on YAG are being conducted. In this study, YAG powder is synthesized by an organic-inorganic complex solution synthesis method using PVA polymer. The PVA solution is added to the sol in which the metal nitrate salts are dissolved, and the precursor is calcined into a porous and soft YAG powder. By controlling the molecular weight and the amount of PVA polymer, the effect on the particle size and particle shape of the synthesized YAG powder is evaluated. The sintering behavior of the YAG powder compact according to PVA type and grinding time is studied through an examination of its microstructure. Single phase YAG is synthesized at relatively low temperature of 1,000 ℃ and can be pulverized to sub-micron size by ball milling. In addition, sintered YAG with a relative density of about 98 % is obtained by sintering at 1,650 ℃.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.150-156
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• 2009

Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.582-588
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• 2002

IrO$_2$-RuO$_2$ films were deposited on plasma sprayed TiO$_2$ buffer layer above Ti metal by sol-gel and dip-coating method. Organic vehicle (ethyl cellulose and $\alpha$-terpineol) and glass frit were added to improve adherence of the coatings. Taguchi method and L$_{18}$ (2$^1$$\times$3$^{7}$ ) orthogonal arrays were evalvated in terms of current density to determine the optimal combination of levels of factors that best satisfy the bigger is better quality characteristic. The observed conditions were as fellows: ethyl cellulose (100 cp), drying temperature and time (17$0^{\circ}C$,20 min), heat treatment temperature and time (75$0^{\circ}C$,10 min), the weight ratio of IrO$_2$-RuO/powders to glass frit (99:5), final heat treatment time (120 min) and flow rate of air (5 sccm), respectively. ANOVA analysis suggested that the influence of the factors within $\alpha$= 0.1 was significant with a 90% confidence level.

• Applied Chemistry for Engineering
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• v.25 no.1
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• pp.41-46
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• 2014

The property improvement of polycarbonate coated with a multilayer film composed of an inorganic $SiO_2$ film and a photocatalytic $TiO_2$ film was studied. The $SiO_2$ film as a binder had an excellent light transmission characteristic. After the treatment with atmospheric pressure plasma, the surface of $SiO_2$ film showed the hydrophilicity, which increased the film coating uniformity with a $TiO_2$-containing aqueous solution. When $TiO_2$ film was over 200 nm thick, the absorption effect of UV rays in the range of 180~400 nm suppressed the yellowing phenomena of polycarbonate substrate. The inorganic film improved the heat resistance of polycarbonate substrates. $TiO_2$ film in the outmost under the exposure of UV rays promotes the catalytic oxidation characteristics and yields the capability to the decomposition of organic contaminants, and also increases the self-cleaning properties due to the increase of hydrophilicity. Structural stability of the polycarbonate substrate coated with inorganic $TiO_2$ and $SiO_2$ film was shown. The role of $SiO_2$ film between $TiO_2$ and polycarbonate substrate suppressed the peeling of $TiO_2$ film by inhibiting the photocatalytic oxidation effect of $TiO_2$ film on the polycarbonate substrate.