• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.1
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• pp.91-96
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• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• 제어로봇시스템학회:학술대회논문집
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• 1997.10a
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• pp.1485-1488
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• 1997

The capacity of memory chip has increased vert quickly and 64MDRAM becomes main product in semiconductor manufacturing lines consists of many sequential processes, including etching process. although it needs direct sensing of wafer state for the accurae detching, it depends on indirect esnsing and sample test because of the complexity of the plasma etching. This equipment receives the inner light of etch chamber through the viewport and convets it to the voltage inetnsity. In this paper, EDP voltage signal has a new role to detect etching failure. First, we gathered data(EPD sigal, etching time and etchrate) and then analyzed the relationships between the signal variatin and the etch rate using two neural network modeling. These methods enable to predict whether ething state is good or not per wafer. For experiments, it is used High Density Inductive coupled Plasma(HDICP) ethcing equipment. Experiments and results proved to be abled to determine the etching state of wafer on-line and analyze the causes by modeling and EPD signal data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.383-383
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• 2010

TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using $BCl_3$/Ar inductively coupled plasma system. The etch rate was measured by a depth pro filer. The chemical etching reactions of the TiN surface was investigated X-ray photoelectron spectroscopy.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.197-200
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• 2001

Novel Enhanced Inductively Coupled Plasma is applied to etch $SiO_2$. Effect of $O_2$ or Ar addition to $C_{4}F_{8}$ gas is monitored by Optical Emission Spectroscopy and Quadrupole Mass Spectrometer. It is fund that Ar or $O_2$ dilution to $C_{4}F_{8}$ increases F emission intensity and decreases $CF_2$ intensity. However, the ac frequency to the Helmholtz coil decreases the F intensity and thus increases $CF_2$/F ratio. By adjusting the ac frequency, the optimum etch rate and PR to $SiO_2$ selectivity can be obtained in E-lCP.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.169-172
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• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.83-84
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• 2007

$BCl_3$/Ar ICP 플라즈마를 이용한 $ZrO_2$ 박막의 식각 메카니즘이 실험 결과와 모델링을 통해 연구되었다. Ar 가스의 증가에 따라, $ZrO_2$의 식각 속도는 선형 변화의 경향을 보이지 않았고, Ar의 약 30% - 35%에서 41.4nm/min의 최대의 속도를 나타내었다. Langmuir probe 측정과 plasma 모델링 결과로부터, $BCl_3$/Ar 가스 혼합비가 플라즈마 파라미터와 active species의 형성에 큰 영향을 미침을 확인하였다. 한편 surface kinetics 모델링 결과로부터, $ZrO_2$의 식각 속도는 ion-assisted chemical reaction mechanism 에 의해 결정됨을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.