Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dry Etching Characteristic of TiN Thin Films using Inductively Coupled Plasma

TiN 박막의 건식 식각 특성

  • Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 박정수 (전자전기공학부 공과대학 중앙대학교) ;
  • 김창일 (전자전기공학부 공과대학 중앙대학교)
  • Published : 2010.06.16
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Abstract

TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using $BCl_3$/Ar inductively coupled plasma system. The etch rate was measured by a depth pro filer. The chemical etching reactions of the TiN surface was investigated X-ray photoelectron spectroscopy.

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