• Applied Chemistry for Engineering
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• v.17 no.1
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• pp.1-11
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• 2006

Non-thermal plasma technology for air pollution control, which are NOx, SOx, VOCs, soot, etc., is reviewed. In the early parts of the paper, generation of non-thermal plasma and plasma chemical process are introduced to provide an appropriate plasma condition (electron energy density) for treating air pollutions. Recent results on numerical simulation, optical diagnostics, and gas treatment are provided to characterize an optimal design of plasma generation and plasma chemical process. These data are also helpful to understand unique features of non-thermal plasma process that is achieved with relatively low temperature conditions, i.e. low enthalpy conditions of the treated gas molecules. In the later parts of the paper, several examples of recently developed non-thermal plasma techniques are illustrated, in which technical and economical assessments of the present techniques are provided.

• Elastomers and Composites
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• v.47 no.4
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• pp.310-317
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• 2012

A jute fiber surface was modified with argon gas in a cylinder type RF plasma generator to enhance the interfacial bond strength and to optimize the plasma treatment condition. The plasma power, gas pressure, and treat time were varied to figure out any effect of those parameters on the morphology and mechanical strength of jute fibers, and the interfacial bond strength for a model composite with polypropylene resin. As the severity of plasma treatment was increased, the surface of jute fibers became rougher. Gas pressure was less effective in roughening of the surface compared with those of treat time and plasma power. Approximately 25% drop in tensile strength of jute fibers was observed for the parameters of treat time and plasma power, while little deterioration was found for gas pressure, with increasing the severity. Based on the interfacial shear strength (IFSS), the optimum plasma treatment condition was determined to be treat time of 30 s, plasma power of 40 W, and gas pressure of 30 mTorr.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.51-57
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• 2019

To protect the Cu surface from oxidation in air, a two-step plasma process using Ar and $N_2$ gases was studied to form a copper nitride passivation as an anti-oxidant layer. The Ar plasma removes contaminants on the Cu surface and it activates the surface to facilitate the reaction of copper and nitrogen atoms in the next $N_2$ plasma process. This study investigated the effect of Ar plasma on the formation of copper nitride passivation on Cu surface during the two-step plasma process through the full factorial design of experiment (DOE) method. According to XPS analysis, when using low RF power and pressure in the Ar plasma process, the peak area of copper oxides decreased while the peak area of copper nitrides increased. The main effect of copper nitride formation in Ar plasma process was RF power, and there was little interaction between plasma process parameters.

• Journal of Korea Foundry Society
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• v.10 no.4
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• pp.289-293
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• 1990

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.55-56
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• 2007

• Electrical & Electronic Materials
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• v.13 no.8
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• pp.44-50
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• 2000

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.4
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• pp.393-404
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• 2000

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.10-17
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• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.220-220
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• 1999

In plasma source ion implantation, the target is immersed in the plasma and repetitively biased by negative high voltage pulses to implant the extracted ions from plasma into the surface of the target material. In this way, the problems of line-of-sight implantation in ion-beam ion implantation technique can be effectively solved. In addition, the high dose rate and simplicity of the equipment enable the ion implantation a commercially affordable process. In this work, plasma source ion implantation technique was used to improve the wear resistance of Co-cemented WC. which has been extensively used for high speed tools. Nitrogen and carbon ions were implanted using the pulse bias of -602kV, 25 sec and at various implantation conditions. The implanted samples were examined using scanning Auger electron spectroscopy and XPS to investigate the depth distributions of implanted ions and to reveal the chemical state change due to the ion implantation. The implanted ions were found to have penetrated to the depth of 3000$\AA$. The wear resistance of the implanted samples was measured using pin-on-disc wear tester and the wear tracks were examined with alpha-step profilometer.