• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.176.1-176.1
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• 2015

본 연구는 플라즈마 건식 식각 후 박막의 물성 특성 변화 측정에 Nano-Indentation 분석 기법을 도입하였으며, 식각 후 박막 표면 강도를 nano 영역에서 측정하여 박막 표면의 damage 분석에 적용하여 물리적인 해석을 시도하였다. 하지만 기판의 대면적화로 인하여 반도체 공정에 사용되는 기판은 300 mm로 증가하였고 이로 인하여 플라즈마 건식 식각에서 대면적에 대한 균일도 향상 연구를 진행 중에 있다. 이 연구에서는 플라즈마 건식 식각 후 박막의 균일도를 Nano-indenter 측정 결과를 기반으로 Weibull 분포 해석을 통하여 정량적인 균일도를 측정하고자 하였다. 플라즈마 건식 식각을 위하여 플라즈마 소스는 Adaptively Coupled Plasma (ACP)를 사용하였고 식각 후 TEOS $SiO_2$ 박막 표면을 분석하기 위하여, 시료 평면의 x, y 축에 대하여 각각 $20{\mu}m$로 indent 각 지점을 이격하여 동일한 측정 조건에서 Nano-indenter를 이용하여 박막 표면의 강도를 측정하였다. 측정된 결과는 Weibull 분포를 활용하여 정량화하였다. 결과에 의하면 플라즈마 소스의 bias 파워가 300 W 일 때 균일도가 가장 높은 29.84로 측정되었고, 150 W 일 때 가장 낮은 8.38로 측정되었다. 식각 전 TEOS $SiO_2$ 박막의 Weibull 분포에 의한 균일도가 17.93으로 측정됨을 기반으로 ACP 플라즈마 소스의 식각 조건에 따라 TEOS $SiO_2$ 박막의 균일도가 상대적으로 변함을 정량적으로 분석할 수 있었다.

• Journal of Pharmaceutical Investigation
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• 제37권2호
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• pp.79-84
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• 2007

This study was aimed to establish analytical method of Bi to develop a guideline of the bioequivalence test of tripotassium dicitrato bismuthate (TDB). For this purpose, a simple, specific and sensitive inductively coupled plasma-mass spectrometry (ICP/MS) method were developed and validated in human plasma. Various concentrations of bismuth standard solution (0-25ng/mL) were prepared with distilled water and human blank plasma. To 10mL of the volumetric flasks, 2mL of blank plasma was added with 8ml of distilled water. Bi standard solution was added to prepare the calibration samples and injected into ICP-MS. The plasma samples obtained from volunteers given 3 tablets of bismuth (total 900mg as TDB) were analyzed as described above. As a result, the coefficients of variation were <20% in quantitation limit (0.2 ng/mL) and <15% at the rest of concentrations. The stability test by repeated freezing-thawing cycles showed that the samples were stable only for 24hr. The stability tested for samples with a short-term period of storage at room temperature and pre-treatment prior to the analysis showed very stable over 24hr. In 8 healthy Korean subjects received Denol tablets at the dose of 900mg bismuth, AUC, $C_{max},\;T_{max}$ and half-life $(t_{1/2})$ were determined to be $198.33{\pm}173.78 ng{\cdot}hr/mL,\;64.48{\pm}27.06 ng/mL,\;0.52{\pm}0.21 hr,\;and\;5.15{\pm}2.67 hr$, respectively, from the plasma bismuth concentration-time curves. In conclusion, the method was suitable for the determination of bismuth in human plasma samples and could be applied to bioequivalence test of bismuth tablet.

• 한국세라믹학회지
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• 제52권6호
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• pp.395-402
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• 2015

The suspension plasma spray (SPS) technique has been used to obtain dense $Y_2O_3$ coatings and to overcome the drawbacks of the conventional air plasma spray (APS). SPS uses suspensions containing micrometer or sub-micrometer sized powders dispersed in liquid media. In this study, microstructure developments and mechanical properties have been investigated as functions of particle size of source material and plasma processing parameters such as plasma power and stand-off distance. The microstructure of the coating was found to be highly related to the particle size and the plasma processing parameters, and it was directly reflected in the hardness and the adhesion strength. When fine powder (BET $16.4m^2/g$) was used as a raw material in the suspension, there was, with increasing stand-off distance, a change from a dense structure with a slightly bumpy surface to a porous structure with a cauliflower-like surface. On the other hand, when a coarse powder (BET $2.8m^2/g$) was used, the coating density was lower, with microscopic splats on the surface. Using fine $Y_2O_3$ powders, the coating layer with an optimum short stand-off distance showed a high hardness of approximately 90% of that of sintered $Y_2O_3$ and an adhesion strength several times higher than that of the coating by conventional APS.

• 한국결정성장학회지
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• 제29권6호
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• pp.359-364
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• 2019

서스펜션 플라즈마 스프레이 법은 미세한 분말을 용사 공정에 적용함으로써 전통적인 플라즈마 스프레이 법의 단점을 극복하고자 개발된 코팅법이다. 본 연구에서는 고밀도의 Y₂O₃ 코팅막을 제조하기 위해 서스펜션 플라즈마 스프레이법을 이용하여 플라즈마 건의 전류량과 총 가스 유량을 공정변수로 하여 코팅막을 제조하였으며, 그에 따른 코팅막 특성에 대한 연구를 하였다. 코팅막의 미세구조 및 물리적 특성 평가 결과 플라즈마 건 전류량 200 A, 총 가스 유량 220 L/min의 조건에서 층상 결함 없이 0.2 vol%의 매우 낮은 기공률을 갖는 고밀도의 Y₂O₃ 코팅막을 제조할 수 있었다.

• 청정기술
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• 제9권3호
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• pp.101-105
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• 2003

MEMS(Micro Electro Mechanical System) 기술에서 실리콘 식각기술의 중요성으로 플라즈마 식각기술의 개발이 꾸준히 진행되고 있다. 본 연구에서는 ICP(Inductive Coupled Plasma)를 이용하여 플라즈마를 발생시켜, 이온에너지를 증가시키지 않고도 이온밀도를 높이고 이온입자들에 의한 식각의 방향성을 가할 수 있는 새로운 플라즈마 기술을 이용하였다. 이같이 플라즈마를 이용하여 실리콘웨이퍼를 식각하여 제조하는 MEMS 응용분야는 다양하나, 본 연구에서는 미생물배양에 응용할 수 있는 PCR(Polymerase Chain Reaction)장치 제작을 위한 식각에 이용하였다. Platen power, Coil power 및 Process pressure에 다양한 변화를 주어 각 변수에 따른 식각속도를 관찰하였다. 각 공정별 변수를 변화시킨 결과 Platen 12W, Coil power 500W, 식각/Passivation Cycle 6/7sec 일 경우 식각속도는 $1.2{\mu}m/min$ 이었고, sidewall profile은 $90{\pm}0.7^{\circ}$로 나타나 매우 우수한 결과를 보였다. 분 연구에 SF6를 식각에 이용하였으며 공정의 최적화를 통하여 사용량을 최소화하여환경영향이 최소가 될 수 있는 가능성이 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• International Journal of Precision Engineering and Manufacturing
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• 제9권2호
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• pp.39-43
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• 2008

Atmospheric pressure plasma polishing (APPP) is a noncontact precision machining technology that uses low temperature plasma chemical reactions to perform atom-scale material removal. APPP is a complicated process, which is affected by many factors. Through a preliminary theoretical analysis and simulation, we confirmed that some of the key factors are the radio frequency (RF) power, the working distance, and the gas ratio. We studied the influence of the RF power and gas ratio on the removal rate using atomic emission spectroscopy, and determined the removal profiles in actual operation using a commercial form talysurf. The experimental results agreed closely with the theoretical simulations and confirmed the effect of the working distance. Finally, we determined the element compositions of the machined surfaces under different gas ratios using X-ray photoelectron spectroscopy to study the influence of the gas ratio in more detail. We achieved a surface roughness of Ra 0.6 nm on silicon wafers with a peak removal rate of approximately 32 $mm^{3}$/min.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제7회 학술발표회 및 한·일 CVD 심포지움 논문개요집
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• pp.158.1-158
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• 1994

Totally dry lithography is studying with using plasma polymerized resist for almost 15 years. Recently organo-silicon ITlOnOmer was proposed as a new resist. When the plasma polymerized resist was irradiated through a mask in oxygen gas, the resist was oxidized and a fine pattern of submicron was successfully developed by $Cl_2$ gas plasma.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.24-28
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• 1997

Diamond deposition by muti-cathode DC PACVD has been investigated. Five cathodes were independently connected to their own DC power supplies. The voltage and current of each cathods were varied up to 700 V and 3.5 A, respectively. The plasma formation and the diamond deposition behaviour on a substrate of 3 inch in diameter were investigated by optical emission spectroscopy, SEM and Raman spectroscopy. The plasma formed by five cathodes was non-uniform, which was depended on the geometry of cathods array. The growth rate and the quality of diamond film were closely related to the spatial distribution of the plasma.

• 반도체디스플레이기술학회지
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• 제7권2호
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• pp.35-38
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• 2008

This study shows the improvement of PR-Ashing rates in semi-conductor process using Atmospheric Plasma. Taguchi method is used to improve Ashing rates of photo-resist that is spread on the surface of a wafer. Improvement of Ashing rates is acquired through the decision of the effective factors and suitable combination of the factors. The results show the contribution rate of each factor and the effectiveness of Plasma for PR-Ashing process in this system.