• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.282-286
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• 2014

Wear characteristic of the nitrided SKD61 which is a typical mold material using for the extrusion of Al6061 alloy was investigated. The surface of SKD61 was nitrided by salt bath and plasma processes. The thickness of surface nitride layer was about $8.9{\mu}m{\sim}21.3{\mu}m$. Reciprocating friction wear test conducted using pin on disk type indicated the plasma treatment followed salt bath has a lower friction coefficient and a smaller adhesive wear with Al6061 alloy. That was identified by the $Fe_4N$ which has a better wear resistance than FeN mainly formed by plasma nitriding.

• Journal of the Korean Applied Science and Technology
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• v.16 no.4
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• pp.287-291
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• 1999

Plasma polymerization of Perfluoropropene(PFP) was carried out in a tubular type reactor. The Plasma was generated by coupling inductively under the fixed discharge power of 25W and the pressure of 100, 140, and 200 mTorr of radio frequency generator. PFP plasma polymerization thin films were deposited in acrylic yams. For 1 hours, the acrylic yams treated and untreated by PFP plasma were immersed in boiling water. Then the reduction of contraction coefficient of acrylic yams were measured respectively. As a result of this experiment, untreated acrylic yams were reduced around 23%, while treated yams were contracted about 18-2%.

• International Journal of Automotive Technology
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• v.2 no.2
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• pp.47-52
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• 2001

For the wear protection of cylinder bore in aluminum cast material the internal plasma spraying technology offers a new economical solution. The size and the weight of the engine blocks significantly can be decreased in comparison with the traditional cast iron sleeves. The coefficient of friction between piston ring and cylinder wall sensitively can be reduced and the wear resistance increased from several factors. The paper gives an overview of the technology from the AlSi cast alloys for engine block to the non destructive testing technology used after the machining by diamond honing. The actual results in engines of different types also will be shown. The economical advantages of the plasma spraying (or the internal coating in cylinder bore also will be discussed in comparison with the different alternatives of technology. The aspect of the market introduction also will be discussed in this paper.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.908-909
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• 2006

The HTCC based multilayer structure plasma head unit have some difficulties in fabrication due to complicated post-processes, such as heat treatment at reduced atmosphere, re-bonding of each layer, and silver metallization. On the other hand, LTCC based technology provides relatively simple process for multilayer plasma unit except weak mechanical properties. To overcome this problem a combined scheme using both LTCC and HTCC technology has been developed in our group, recently. In this work, we report the structural design, materials selection, joining of LTCC with HTCC substrate, and co-firing process for the fabrication of multilayered atmospheric plasma head unit.

• Transactions of the Korean Society of Automotive Engineers
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• v.14 no.3
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• pp.157-163
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• 2006

This paper described the process of improving durability performance of the exhaust decoupler by the plasma nitriding. The properties of plasma nitriding treatment of AIS1304 stainless steel were tested using specimens before applying plasma nitriding to a mesh ring. In order to analyses the effect of plasma nitriding treatment on the mechanical properties, SEM(Scanning Electron Microscopes), roughness and hardness tester were used. Based on specimen plasma nitriding, we could find appropriate condition for application to the mesh ring of decoupler. To confirm the improved durability performance, we compared the number of cycles, which reaches to fracture, of the nitrided decoupler and that of the unnitrided decoupler by the bending cyclic test. In this test, the durability and wear resistance of the mesh ring are significantly improved by plasma nitriding treatment.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• BMB Reports
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• v.52 no.10
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• pp.601-606
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• 2019

Arginine methylation plays crucial roles in many cellular functions including signal transduction, RNA transcription, and regulation of gene expression. Protein arginine methyltransferase 8 (PRMT8), a unique brain-specific protein, is localized to the plasma membrane. However, the detailed molecular mechanisms underlying PRMT8 plasma membrane targeting remain unclear. Here, we demonstrate that the N-terminal 20 amino acids of PRMT8 are sufficient for plasma membrane localization and that oligomerization enhances membrane localization. The basic amino acids, combined with myristoylation within the N-terminal 20 amino acids of PRMT8, are critical for plasma membrane targeting. We also found that substituting Gly-2 with Ala [PRMT8(G2A)] or Cys-9 with Ser [PRMT8(C9S)] induces the formation of punctate structures in the cytosol or patch-like plasma membrane localization, respectively. Impairment of PRMT8 oligomerization/dimerization by C-terminal deletion induces PRMT8 mis-localization to the mitochondria, prevents the formation of punctate structures by PRMT8(G2A), and inhibits PRMT8(C9S) patch-like plasma membrane localization. Overall, these results suggest that oligomerization/dimerization plays several roles in inducing the efficient and specific plasma membrane localization of PRMT8.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.