Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Investigation of Spatial Distribution of Plasma Density between the Electrode and Lateral Wall of Narrow-gap CCP Source

좁은 간격 CCP 전원의 전극과 측면 벽 사이 플라즈마 분포

  • Choi, Myung-Sun (Department of Energy Systems Engineering, Seoul National University) ;
  • Jang, Yunchang (Department of Energy Systems Engineering, Seoul National University) ;
  • Lee, Seok-Hwan (Department of Energy Systems Engineering, Seoul National University) ;
  • Kim, Gon-Ho (Department of Energy Systems Engineering, Seoul National University)
  • 최명선 (서울대학교 공과대학 에너지시스템공학부) ;
  • 장윤창 (서울대학교 공과대학 에너지시스템공학부) ;
  • 이석환 (서울대학교 공과대학 에너지시스템공학부) ;
  • 김곤호 (서울대학교 공과대학 에너지시스템공학부)
  • Received : 2014.10.13
  • Accepted : 2014.11.14
  • Published : 2014.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

Keywords

References

  1. M.-S Choi, Y. Jang, S.-H Lee, G.-H Kim, Journal of KSDT, vol.13, No.3, pp 39-43, 2014.
  2. Z.-H. Bi, Z.-L. Dai, Y.-R. Zhang, D.-P. Liu, Y.-N, Wang, Plasma Sources Sci. Technol. 22 (2013) 055007 (8pp). https://doi.org/10.1088/0963-0252/22/5/055007
  3. M. A. Lieberman, J. P. Booth, P. Chabert, J. M. Rax, M. M. Turner, Plasma Sources Sci. Technol. 11 (2002) 283-293. https://doi.org/10.1088/0963-0252/11/3/310
  4. A. Perret, P. Chabert, J.-P. Booth, J. Jolly, J. Guillon, and Ph. Auvaray, Appl. Phys. Lett. 83 (2003) 243. https://doi.org/10.1063/1.1592617
  5. V. Volynetz, A. Ushakov, D. Sung, Y. N. Tolmachev, V. G. Pashkovsky, J. B. Lee, T. Y. Kwon, K. S. Jeong, J. Vac. Sci. Technol. A 26, (2008) 406. https://doi.org/10.1116/1.2899413
  6. I. Sawada, P. L. G. Ventzek, B. Lane, T. Ohshita, R. R. Upadhyay, L. L. Raja, J. J. Appl. Phy. 53 (2014) 03DB01. https://doi.org/10.7567/JJAP.53.03DB01
  7. Y.-R. Zhang, X. Xu, A. Bogaerts, Y.-N. Wang, J. Phys. D: Appl. Phys. 45 (2012) 015203 (13pp). https://doi.org/10.1088/0022-3727/45/1/015203
  8. https://www.esi-group.com/software-services/virtual-environment/cfd-multiphysics/ace-suite/cfd-ace.
  9. T. Ohba, T. Makabe, Appl. Phy. Lett. 96 (2010) 111501. https://doi.org/10.1063/1.3360888