• 제목/요약/키워드: Plasma Technology

검색결과 3,817건 처리시간 0.037초

Plasma Resistance and Etch Mechanism of High Purity SiC under Fluorocarbon Plasma

  • Jang, Mi-Ran;Paek, Yeong-Kyeun;Lee, Sung-Min
    • 한국세라믹학회지
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    • 제49권4호
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    • pp.328-332
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    • 2012

  • Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron analysis revealed that etched SiC has a surface carbon content higher than that of etched Si, resulting in a thicker fluorocarbon polymer layer on the SiC surface. The plasma resistance of SiC was correlated with this thick fluorocarbon polymer layer, which reduced the reaction probability of fluorine-containing species in the plasma with silicon from the SiC substrate. The remnant carbon after the removal of Si as volatile etch products augments the surface carbon, and seems to be the origin of the higher plasma resistance of SiC.

  • https://doi.org/10.4191/kcers.2012.49.4.328 인용 PDF KSCI

실시간 플라즈마공정 모니터링을 위한 Self Plasma-Optical Emission Spectroscopy 성능 향상 (Improved Self Plasma-Optical Emission Spectroscopy for In-situ Plasma Process Monitoring)

  • 조경재;홍상진
    • 반도체디스플레이기술학회지
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    • 제16권2호
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    • pp.75-78
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    • 2017

  • We reports improved monitoring performance of Self plasma-optical emission spectroscopy (SP-OES) by augmenting a by-pass tube to a conventional straight (or single) tube type self plasma reactor. SP-OES has been used as a tool for the monitoring of plasma chemistry indirectly in plasma process system. The benefits of SP-OES are low cost and easy installation, but some semiconductor industries who adopted commercialized SP-OES product experiencing less sensitivity and slow sensor response. OH out-gas chemistry monitoring was performed to have a direct comparison of a conventional single type tube and a by-pass type tube, and fluid dynamic simulation on the improved hardware design was also followed. It is observed faster pumping out of OH from the chamber in the by-pass type SP-OES.

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