• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.552-552
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• 2013

In our study we consider Al2O3 ceramic substrates for Plasma Surface Treatments in order to improve deposited diamond surface and increase diamond deposition rate by applying DBD (Dielectric Barrier Dischrge) system. Because Plasma Surface Treatments was used as a modification method of material surface properties like surface free energy, wettability, and adhesion. By applying Plasma Surface Treatments diamond films are deposited on the Al2O3 ceramic substrates. DC Arc Plasmatron with mathane and hydrogen gases is used. Deposited diamond films are investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) is studied. As a result, nanocrystalline diamond films were identified by using SEM and diamond properties in XRD peaks at (111, $43.8{\Box}$, (220, $75.3{\Box}$ and (311, $90.4{\Box}$ were shown. Absorption peaks in FTIR spectrum, caused by CHx sp3 bond stretching of CVD diamond films, were identified as well. Finally, we improved such parameters as depostion rate ($2.3{\mu}m$/h), diamond surface uniformity, and impurities level by applying Plasma Surface Treatments. These experimental results show the importance of Plasma Surface Treatments for diamond deposition by a plasma source.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.61-66
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• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.81-86
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• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.131-133
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• 1993

Plasma polymerized thin films were prepared using an interelectrode capacitively coupled gas flow type reactor. Hexamethyldisiloxane was chosen as the monomer to be used. The dielectric properties of the thin films have been investigated with the changes of discharge power, heat treatment temperature and frequency. The relative dielectric constant was increased with an increasing of discharge power, but was decreased with an increasing of heat treatment temperature.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.1-6
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• 1998

Two kinds of the ac-plasma display panel (PDP) with the comb type and the matrix type electrodes were fabricated. The discharge properties were studied as a function of as species (Ne and Ne+He+Xe) and its pressure. The firing voltages (Vf) of the PDP with comb type electrodes were 159 V and 195 V under pure Ne and ne+He+Xe(68:30:2) gas mixture respectively. In case of PDP cell with the matrix type electrodes the Vf was increased to 200 V for pure Ne and 240 V for Ne+He+Xe gas mixture under the same gas pressure(300 mbar).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.160-160
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• 1999

To reduce the fouling of heat exchangers, the plasma polymerized films was coated on the heat exchangers, and an effect of plasma polymerized film on fouling of heat exchangers was investigated. Monomer and reactive gases were used as the precursors of plasma polymerization. Plasma polymerized films were deposited with process parameters of pressure, power, and ratio of gases. Plasma polymerized films could be served as functional layers of good wettability and high resistance to corrosion. Wettability of plasma polymerized film could be controlled by the ratio change gas mixture. Hydrophilicity of plasma polymerized films on heat exchanger in air conditioner can provide improvement in performance of heat exchanger which results from good water drainage, decrease of pressure drop. DC-plasma polymerized films improve resistance to corrosion whcih is related to deposit formation in heat exchangers. The difference in the build up of fouling deposits between bare substrate and plasma polymerized substrate was investigated by scanning electron microscopy (SEM). An effect of plasma polymerized film on fouling of heat exchangers was discussed in terms of surface properties such as wettability, surface chemical state.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.94-94
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• 2010

As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.112-115
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• 2015

In this study, the surface of ITO films was modified using $N_2-O_2$ molecular plasma, and the effects of oxygen concentration in the plasma on the ITO surface properties were investigated. Upon plasma treatment of ITO films, the surface roughness of ITO films seldom changed up to the oxygen concentration in the range of 0% to 40%, while the roughness of the films slightly changed at or above the oxygen concentration of 60%. The contact angle of water droplet on ITO films dramatically changed with varying oxygen concentration in the plasma, and the minimum value was found to be at the oxygen concentration of 20%. The plasma resistance at this condition exhibited a maximum value, and the change of resistance showed an inverse relationship compared to that of contact angle. From these results, it was conjectured that the chemical reactions in the sheath of the molecular plasma dominated more than the physical actions due to energetic ion bombardment, and also the plasma resistance could be used as an indirect indicator to qualitatively diagnosis the state of plasma during the plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.64-64
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• 2015

Control of plasma processing methodologies can only occur by obtaining a thorough understanding of the physical and chemical properties of plasmas. However, all plasma processes are currently used in the industry with an incomplete understanding of the coupled chemical and physical properties of the plasma involved. Thus, they are often 'non-predictive' and hence it is not possible to alter the manufacturing process without the risk of considerable product loss. Only a more comprehensive understanding of such processes will allow models of such plasmas to be constructed that in turn can be used to design the next generation of plasma reactors. Developing such models and gaining a detailed understanding of the physical and chemical mechanisms within plasma systems is intricately linked to our knowledge of the key interactions within the plasma and thus the status of the database for characterizing electron, ion and photon interactions with those atomic and molecular species within the plasma and knowledge of both the cross-sections and reaction rates for such collisions, both in the gaseous phase and on the surfaces of the plasma reactor. The compilation of databases required for understanding most plasmas remains inadequate. The spectroscopic database required for monitoring both technological and fusion plasmas and thence deriving fundamental quantities such as chemical composition, neutral, electron and ion temperatures is incomplete with several gaps in our knowledge of many molecular spectra, particularly for radicals and excited (vibrational and electronic) species. However, the compilation of fundamental atomic and molecular data required for such plasma databases is rarely a coherent, planned research program, instead it is a parasitic process. The plasma community is a rapacious user of atomic and molecular data but is increasingly faced with a deficit of data necessary to both interpret observations and build models that can be used to develop the next-generation plasma tools that will continue the scientific and technological progress of the late 20th and early 21st century. It is therefore necessary to both compile and curate the A&M data we do have and thence identify missing data needed by the plasma community (and other user communities). Such data may then be acquired using a mixture of benchmarking experiments and theoretical formalisms. However, equally important is the need for the scientific/technological community to recognize the need to support the value of such databases and the underlying fundamental A&M that populates them. This must be conveyed to funders who are currently attracted to more apparent high-profile projects.

• The KSFM Journal of Fluid Machinery
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• v.15 no.3
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• pp.46-50
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• 2012

Plasma actuator makes parallel flow on the wall surface by the interaction between plasma and neutral air particles. Dielectric barrier discharge (DBD) plasma actuator is widely studied as one type of plasma actuators, which consists of one electrode exposed to the environmental gas and the other encapsulated by a dielectric material. This paper is experimentally focused on the performance of DBD plasma actuator mounted on a flat plate, which depends on kinds of the electrode materials, their thicknesses and the supplied voltage including its frequency. We measured the velocity magnitudes of the induced flow by a stagnation probe as a performance parameter of the plasma actuators. The velocity profiles of the flow induced by the plasma actuators are similar in all measurement cases. The magnitude of the induced velocity is strongly influenced by the thickness of the electrodes and the frequency of the input voltage. The performance of DBD plasma actuators is related to the electric properties of the electrode materials such as the ionization energy and the electrical resistivity.