Gas phase diagnostics of high-density $SiH_4/H_2$ microwave plasma

As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.