• Journal of Environmental Health Sciences
• /
• v.37 no.3
• /
• pp.218-225
• /
• 2011

Objectives: In this paper, a dielectric barrier discharge (DBD) plasma reactor was investigated for degrading the dye Rhodamine B (RhB) in aqueous solutions. Methods: The DBD plasma reactor system in this study consisted of a plasma component [titanium discharge (inner), ground (outer) electrode and quartz dielectric tube], power source, and gas supply. The effects of various parameters such as first voltage (input power), gas flow rate, second voltage (output power), conductivity and pH were investigated. Results: Experimental results showed that a 99% aqueous solution of 20 mg/l Rhodamine B is decolorized following an eleven minute plasma treatment. When comparing the performance of electrolysis and plasma treatment, the RhB degradation of the plasma process was higher that of the electrolysis. The optimum first voltage and air flow rate were 160 V (voltage of trans is 15 kV) and 3 l/min, respectively. With increased second voltage (4 kV to 15 kV), RhB degradation was increased. The higher the pH and the lower conductivity, the more Rhodamine B degradation was observed. Conclusions: OH radical generation of dielectric plasma process was identified by degradation of N, N-dimethyl-4-nitrosoaniline (RNO, indicator of OH radical generation). It was observed that the effect of UV light, which was generated as streamer discharge, on Rhodamine B degradation was not high. Rhodamine B removal was influenced by real second voltage regardless of initial first and second voltage. The effects of pH and conductivity were not high on the Rhodamine B degradation.

• Journal of the Korean institute of surface engineering
• /
• v.49 no.1
• /
• pp.92-97
• /
• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.23 no.12
• /
• pp.184-190
• /
• 2009

Tri-acetyl-cellulose(TAC) film surface was modified by atmospheric-pressure plasma technique to obtain the hydrophilic functional groups and improve the contact angle. TAC film was modified with N2 plasma ionized in dielectric barrier discharge(DBD) reactor under atmospheric pressure. We measured the change of the contact angle and the surface energy with respect to the plasma treatment conditions such as plasma treatment power, discharge gap and Ｎ2 gas flow rate. As the plasma treatment speed of 100[mm/sec], the plasma treatment power of 1.5[kW], discharge gap 2[mm] and the $N_2$ gas flow rate 140[LPM], the best contact angle and the highest surface energy were obtained. The degree of hydrophilization depended strongly on the plasma-treating time and discharge power.

• Applied Chemistry for Engineering
• /
• v.21 no.6
• /
• pp.676-679
• /
• 2010

Nano composite particles were synthesized from a bulk ZrVFe alloy ingot by transferred DC thermal plasma. Effects of plasma gas flow rate on the characteristics of the produced nano composite particles were investigated. The characteristics of the synthesized powder were analyzed by field scanning electron microscopy (FE-SEM), light scattering particle size analyzer (PSA), energy dispersive X-ray spectroscopy (EDS), X-ray diffractometer (XRD), and Brunauer-Emmett-Teller (BET) surface area analyzer. As the flow rate of plasma gas increased from 20 L/min to 40 L/min, the average particle size decreased from 91 nm to 55 nm, the particle size distribution became narrower, the surface area increased from $200\;m^2/g$ to $255\;m^2/g$, the particle composition was nearly unaffected, and the particle crystallinity was improved.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.18 no.1
• /
• pp.26-32
• /
• 2014

In this study, DC (Direct current) type steam plasma igniter is developed for effective ignition of high-energy density metal aluminum and gas temperature is measured by emission spectrum of OH radical. Because of the ultra-high gas temperature, the DC plasma jet is measured by Boltzmann plot method which is the non-contact optical technique and spectrum comparison-analysis. And both methods were applied to experiment after accurate verification. As a result, we could identify that plasma jet temperature is 2900 K ~ 5800 K in the 30 mm range from the nozzle tip.

• Korean Journal of Materials Research
• /
• v.17 no.6
• /
• pp.308-312
• /
• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.3
• /
• pp.116-119
• /
• 2010

The etching characteristics of zinc oxide (ZnO) were investigated, including the etch rate and the selectivity of ZnO in a $Cl_2/BCl_3$/Ar plasma. It was found that the ZnO etch rate, the RF power, and the gas pressure showed non-monotonic behaviors with an increasing Cl2 fraction in the $Cl_2/BCl_3$/Ar plasma, a gas mixture of $Cl_2$(3 sccm)/$BCl_3$(16 sccm)/Ar (4 sccm) resulted in a maximum ZnO etch rate of 53 nm/min and a maximum etch selectivity of 0.89 for ZnO/$SiO_2$. We used atomic force microscopy to determine the roughness of the surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas. Due to the relatively low volatility of the by-products formed during etching with $Cl_2/BCl_3$/Ar plasma, ion bombardment and physical sputtering were required to obtain the high ZnO etch rate. The chemical states of the etched surfaces were investigated using X-ray photoelectron spectroscopy (XPS). This data suggested that the ZnO etch mechanism was due to ion enhanced chemical etching.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.8
• /
• pp.727-732
• /
• 2008

In this work, the etch characteristics of $VO_2$ thin films were investigated using inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixtures. To analyze the plasma characteristics, a quadrupole mass spectrometer (QMS), an optical emission spectroscopy (OES), and a Langmuir probe measuring system were used. The surface reaction of the $VO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS). It was found that an increase in Ar fraction in the $Cl_2/Ar$ plasma at fixed gas pressure, input power, and bias power resulted in increasing $VO_2$ etch rate which reached a maximum value of 87.6 nm/min at 70-75 % Ar. It was confirmed that the etch rate of the $VO_2$ films was mainly controlled by the ion flux. On the basis of measuring results, we will discuss possible etching mechanism of $VO_2$ film in the $Cl_2/Ar$ plasma.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.22 no.5
• /
• pp.282-288
• /
• 2010

Experiment on the surface characteristics of polymer films treated by atmospheric pressure plasma has been conducted. We chose the process parameters as frequency, gas flow, treatment time, and scrutinized the effects of the process parameters on the surface characteristics of polymer materials by measuring the contact angle and examining SEM. As the result, the surface characteristics highly depends on frequency, reaction gas and treatment time. In the case of PC substrate, the contact angle was changed from $83.5^{\circ}$ (before plasma treatment) to $30^{\circ}$ (after plasma treatment) at 30 kHz, CDA 0.6%, and number of repeat 7. In the case of PET substrate, the contact angle change was found from $59^{\circ}$ to $23.5^{\circ}$ at 20 kHz, CDA 0.6%, and number of repeat 7. In the case of EVA substrate, it shows from $84^{\circ}$ to $44.2^{\circ}$ at 30 kHz, CDA 0.6%, and number of repeat 7.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.1
• /
• pp.1-5
• /
• 2008

ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled $BCl_3/Ar$ plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a $BCl_3(20)/Ar(80)$ gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200V, a total gas flow of 20 sccm, and a chamber pressure of 1Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in $BCl_3/Ar$ plasma.