• Mass Spectrometry Letters
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• v.6 no.4
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• pp.112-115
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• 2015

In this article, we examine the influences of Ne and He buffer gases under confined Ar⁺ ion cloud in a homemade Paul ion trap in various pressures and confinement times. The trap is of small size (r₀ = 1 cm) operating in a radio frequency (rf) voltage only mode, and has limited accuracy of 13 V. The electron impact and ionization process take place inside the trap and a Faraday cup has been used for the detection. Although the experimental results show that the Ar⁺ ion FWHM with Ne buffer gas is wider than the He buffer gas at the same pressure (1×10^-1 mbar) and confinement time is about 1000 μs, nevertheless, a faster cooling was found with He buffer gas with 500 μs. ultimetly, the obtanied results performed an average cloud tempertures reduced from 1777 K to 448.3 K for Ne (1000 μs) and from 1787.9 K to 469.4 K for He (500 μs)

• Membrane Journal
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• v.11 no.1
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• pp.38-49
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• 2001

The surface of polyimide membrane was modified by plasma treatment using Ar and NH~. and the permeability and selectivity for the mixture gas $(CO_2/N_2=20/80 vol%)$ were measured. The per¬meation experiments were performed by a variable volume method at $30^{\circ}$C and total pressure of 5 atm, The effect of the plasma conditions such as treatment time, power input, gas flow rate and pressure in the reactor on the transport Dwperties of modified membranes was investigated. The surface of the plasma treated membrane was analyzed by means of FTlR - ATH, ESCA and AFM. The dependences of the wettability and the etching on plasma treatment time were investigated by use of the contact angle and the weight loss measurement. Measurements of gas pcnneability characteristic were performed using both dry and wet membranes. The effects of experimental conditions such as temperature on the membrane performance were studied.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.199-203
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• 2008

The effects of surface treatment by $O_2$ plasma on the Bio-FETs were investigated by using the pseudo-MOSFETs on the SOI substrates. After a surface treatment by $O_2$ plasma with different RF powers, the current-voltage and field effect mobility of pseudo-MOSFETs were measured by applying back gate bias. The subthreshold characteristics of pseudo-MOSFETs were significantly degraded with increase of RF power. Additionally, a forming gas anneal process in 2 % diluted $H_2/N_2$ ambient was developed to recover the plasma process induced surface damages. A considerable improvement of the subthreshold characteristics was achieved by the forming gas anneal. Therefore, it is concluded that the pseudo-MOSFETs are a powerful tool for monitoring the surface treatment of Bio-FETs and the forming gas anneal process is effective for improving the electrical characteristics of Bio-FETs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.77-77
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• 2011

These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.291-297
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• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• YAKHAK HOEJI
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• v.39 no.5
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• pp.480-486
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• 1995

The change in discharge current of a glow discharge has been shown the potential sensitive detector for gas chromatography. To investigate the effect of carrier gas on the electrical characteristics of the discharge and the peak response, the discharge pressure, gas flow rate, and discharge gap have been studied. The discharge gas included the Ar, He, and N$_{2}$. The gas flow rate has been found one of the important parameters to affect both the electrical characteristics and the peak response.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1689-1692
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• 2013

Food is a common source of chromium (Cr) exposure. However, it is difficult to analyze Cr in complex food matrices by using inductively coupled plasma mass spectrometry (ICP-MS) because the major isotope, $^{52}Cr$, is masked by interference generated by the sample matrix and the plasma gas. Among the systems available to minimize interference, the recently developed collision-reaction interface (CRI) has a different structure relative to that of other systems (e.g., collision cell technology, octopole reaction system, and dynamic reaction cell) that were designed as a chamber between the skimmer cone and quadrupole. The CRI system introduces collision or reaction gas directly into the plasma region through a modified hole of skimmer cone. We evaluated the use of an CRI ICP-MS system to minimize polyatomic interference of $^{52}Cr$ and $^{53}Cr$ in various foodstuffs. The $^{52}Cr$ concentrations measured in the standard mode were 2-3 times higher than the certified values. This analytical method based on an ICP-MS system equipped with a CRI of helium gas was effective for Cr analysis in complex food matrices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.249-256
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• 1997

The effect of process parameter of plasma assisted chemical vapor deposition (PACVD) on the variation of the ratio between cubic boron nitride (c-BN) and hexagonal boron nitride (h-BN) in the film was in-vestigated. The plasma was generated by electric power with the frequency between 100 and 500 KHz. BCl3 and NH3 were used as a boron and nitrogen source respectively and Ar and hydrogen were added as a car-rier gas. Films were composed of h-BN and c-BN and its ratio varied with the magnitude of process parameters, voltage of the electric power, substrate bias voltage, reaction pressure, gas composition, sub-strate temperature. TEM observation showed that h-BN phase was amorphous while crystalline c-BN par-ticle was imbedded in h-BN matrix in the case of c-BN and h-BN mixed film.

• Journal of Environmental Science International
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• v.20 no.5
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• pp.623-630
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• 2011

This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical) by using dielectric barrier discharge (DBD) plasma. The DBD plasma reactor of this study consisted of a quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode. The effect of shape (rod, spring and pipe) of ground electrode, diameter (9~30 mm) of ground electrode of spring shape and inside diameter (4~13 mm) of quartz tube, electrode diameter (1~4 mm), electrode materials (SUS, Ti, iron, Cu and W), height difference of discharge and ground electrode (1~15.5 cm) and gas flow rate (1~7 L/min) were evaluated. The experimental results showed that shape of ground electrode and materials of ground and discharge electrode were not influenced the RNO degradation. The thinner the diameter of discharge and ground electrode, the higher RNO degradation rate observed. The effect of height gap of discharge between ground electrode on RNO degradation was not high within the experimented value. Among the experimented parameters, inside diameter of quartz tube and gas flow rate were most important parameters which are influenced the decomposition of RNO. Optimum inside diameter of quartz tube and gas flow rate were 7 mm and 4 L/min, respectively.