• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.271-272
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• 2012

Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.49-53
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• 2001

Vortical etching experiments of ($SrBi_2Ta_2O_9$)/Si thin films have been performed by using the inductively coupled plasma reactive ion etching (ICP-ME) apparatus. The purposes of these experiments are to get the effective area of vertical surface. Because this technology is very important to get good qualities of ferroelectric gate structure, capacitor and the minimum parasitic effects related to the excellent performances of the FRAM (Ferroelectric Random Access Memory) device. The reacting gases were Ar and $Cl_2$gases, and various $Ar/C1_2$flow ratios were used. The etching experiments were carried out at various RF powers such as 700, 700, 500W and at various DC powers such as 200, 150, 100, 50W, respectively. The maximum etch rate of $SrBi_2Ta_2O_9$/Si thin films was 1050 A/min at the $Ar/C1_2$ gas ratio of 20/16, RF power of 700 W and DC power of 200 W. From the SEM (scanning electron microscopy) image of the SBT thin films, the wall angle was as good as about $82^{\circ}$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.37-41
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• 2012

The Ag nanoparticles attached $La_{0.7}Sr_{0.3}Co_{0.3}Fe_{0.7}O_{3-{\delta}}$ (LSCF) perovskites were prepared by plasma method. The Ag nanoparticles with size of several nanometers deposited from the Ag target were coated on the surface of LSCF powders with size range from 0.2 to 3 ${\mu}m$. The agglomeration of Ag particles annealed at $800^{\circ}C$ under inert gas of Ar were rarely observed. The inter-diffusion between surface Ag and core LSCF is effectively strong to prevent aggregation of Ag nanoparticles. The wave number of FT-IR spectra for LSCF were largely shifted as the concentration of Ag on LSCF up to 2.11 wt.%. The ionic states of irons in LSCF were measured by M$\ddot{o}$ssbauer spectroscopy. The small amount of $Fe^{4+}$ ions are converted to $Fe^{3+}$ ions after Ag nanopartcles were coated on LSCF.

• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.270-277
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• 2008

Vacuum is any air or gas pressure less than a prevailing pressure in an environmental or, specifically, any pressure lower than the atmospheric pressure and is used by a wide variety of scientists and engineering - including clean environment, thermal insulation, very long mean free path, plasma, space simulation[1]. The space environment is characterized by such a severe condition as high vacuum, and very low and high temperature. Since a satellite will be exposed to such a space environment as soon as it goes into its orbit, space environmental test should be carried out to verify the performance of the satellite on the ground under the space environmental conditions. A general and widely used method to simulate the space environment is using a thermal vacuum chamber which consists of vacuum vessel and thermally controlled shroud. As indicated by name of vacuum chamber, the vacuum technology is applied to design and manufacture of the thermal vacuum chamber. This paper describe the vacuum technology which is applied to space business.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.1-7
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• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Analytical Science and Technology
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• v.15 no.6
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• pp.514-520
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• 2002

The electrothermal vaporization (ETV) hollow cathode glow discharge atomic emission spectrometer for analysis of liquid sample has been developed and characterized. This system has improved the sample introduction method of electrothermal vaporization and the hollow cathode glow discharge. The sample introduction method was possible to provide high analyte transport efficiency to the plasma by helix coil made of tungsten material. In addition, small volume samples (<$30{\mu}{\ell}$) could be used. The system has glow discharge cell with special design for improvement of precision. The effect of discharge parameters such as discharge power, gas flow rate has been studied to find optimum condition. The emitted light was effectively carried into detector by fiber optic cable in UV region. The calibration curve of Pb, Cd were obtained with 3 samples.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.839-843
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• 2011

ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by ${\times}$ sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at $800^{\circ}C$, $1,100^{\circ}C$. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at $1,100^{\circ}C$ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at $1,100^{\circ}C$ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 ${\mu}m$ with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.

• Journal of Chest Surgery
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• v.27 no.2
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• pp.99-113
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• 1994

Pentastarch is a new synthetic hydroxyethyl starch similar to hetastarch. We report on the clinical comparisons the clinical efficacy and safety of 10% pentastarch in prime solutions for CPB in cardiac operations with that of 20% serum albumin. During CPB, group P [n = 20] received 500ml of 10% pentastarch and group A [n = 20] received 100ml of 20% albumin in prime solutions The postoperative time of ICU stay in group P and the day and amount of chest drain, hospital stay in group A were longer [p<0.05]. Fresh whole blood and PRBC were added only in group A and a higher amount of hartman solution was added in group A during CPB [p<0.05]. Prothrombin time was prolonged preoperatively and 2 days postoperatively in group A and 7 days postoperatively in group P [p<0.05] but there were no significant differences in bleeding time or fibrinogen level. Platelet count was higher immediately postoperatively in group A and preoperatively and 1, 2, and 7 days postoperatively in group P [p<0.05].Total protein and albumin level were higher 1 day postoperatively in group A and 2 and 7 days postoperatively in group P [p<0.05]. BUN was increased 2 days postoperatively in group A and Cr was increased 1 day postoperatively in group P [p<0.05]. CPK was higher preoperatively and 1, 2, and 7 days postoperatively in group A and plasma hemoglobin level was also higher 2 and 7 days postoperatively in group A [p<0.05]. There were no significant differences in arterial blood gas analysis but higher pO2 and lower pCO2 levels were maintained in group P and ejection fraction was higher 7 days postoperatively in group P [p<0.05]. Both groups were improved postoperatively in NYHA class and the hemodynamic parameters such as MAP, CO, CI, SV, LVSWI were well maintained in group P [p<0.05]. The amount of blood products used was higher in group A and urine output was higher immediately postoperatively in group A and 1, 2 days postoperatively in group P and the chest output was higher in group A. The complications were developed in 7 patients in group A and 5 patients in group P and mortality was not present in both groups.In conclusion, 10% pentastarch is as safe and effective as 20% albumin in prime solutions for cardiopulmonary bypass in cardiac operations.