Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Investigation on Growth Characteristic of ZnO Nanostructure with Various O2 Pressures by Thermal Evaporation Process

열증착법으로 성장된 ZnO 나노구조물의 산소유량 변화에 대한 성장 변화

  • Kim, Kyoung-Bum (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Jang, Yong-Ho (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Chang-Il (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeong, Young-Hun (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young-Jin (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Jo, Jeong-Ho (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Paik, Jong-Hoo (Optic and Electronic Ceramics Division, Korea Institute of Ceramic Engineering & Technology) ;
  • Nahm, Sahn (Department of Materials Science and Engineering, Korea University)
  • 김경범 (한국세라믹기술원 전자부품센터) ;
  • 장용호 (한국세라믹기술원 전자부품센터) ;
  • 김창일 (한국세라믹기술원 전자부품센터) ;
  • 정영훈 (한국세라믹기술원 전자부품센터) ;
  • 이영진 (한국세라믹기술원 전자부품센터) ;
  • 조정호 (한국세라믹기술원 전자부품센터) ;
  • 백종후 (한국세라믹기술원 전자부품센터) ;
  • 남산 (고려대학교 신소재공학과)
  • Received : 2011.08.16
  • Accepted : 2011.09.13
  • Published : 2011.10.01
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Abstract

ZnO nanostructures were developed on a Si (100) substrate from powder mixture of ZnO and 5 mol% Pd (ZP-5) as reactants by ${\times}$ sccm oxygen pressures(x= 0, 10, 20, 40). DTA (differential thermal analysis) result shows the Pd(5 mol%)+ZnO mixtured powder(PZ-5) is easily evaporated than pure ZnO powder. The PZ-5 mixtured powder was characterized by DTA to determine the thermal decomposition which was found to be at $800^{\circ}C$, $1,100^{\circ}C$. Weight loss(%) and ICP (inductively coupled plasma) analysis reveal that Zn vaporization is decreased by increased oxygen pressures from the PZ-5 at $1,100^{\circ}C$ for 30 mins. Needle-like ZnO nanostructures array developed from 10 sccm oxygen pressure, was well aligned vertically on the Si substrate at $1,100^{\circ}C$ for 30 mins. The lengths of the Needle-like ZnO nanostructures is about 2 ${\mu}m$ with diameters of about 65 nm. The developed ZnO nanostructures exhibited growth direction along [001] with defect-free high crystallinity. It is considered that Zn vaporization is responsible for the growth of Needle-like ZnO nanostructures by controlling the oxygen pressures. The photoluminescence spectra of ZnO nanostructures exhibited stronger 376.7 nm NBE (near band-edge emission) peak and 529.3 nm DLE (deep level energy) peak.

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References

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