• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.184-185
• /
• 2007

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.356-356
• /
• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• Proceedings of the KIEE Conference
• /
• 1993.07b
• /
• pp.612-614
• /
• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.1
• /
• pp.79-84
• /
• 2002

An accurate cross sections set is necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method, we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. It is general calculation that used in this method to an two-term approximation of Boltzmann equation. But it may give erroneous transport coefficients for CF$_4$ molecule treated in this paper having \`C2v symmetry\`, therefore, multi-term approximation of the Boltzmann equation analysis which can consider anisotropic scattering exactly is carried out. It is necessary to require understanding of the fundamental principle of analysis method. Therefore, in this paper, we compared the electron transport coefficients(W and ND$\_$L/) in pure Ar, O$_2$, and CF$_4$ gas calculated by using two-term approximation of the Boltzmann equation analysis code uses the algorithm proposed by Tagashira et al. with those by multi-term approximation by Rubson and Ness which was developed at James-Cook university, and discussed an application and/or validity of the calculation method by comparing these calculated results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.408-411
• /
• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.550-551
• /
• 2005

고밀도 유도결합 플라즈마 장치의 $O_2$ 방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $O_2$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온 및 중성종, 활성종들에 대해 공간 평균된 유체 방정식을 기반으로 하고 있으며, 고밀도 유도결합 플라즈마 장치에서 전자가열 모델은 anomalous skin effect 를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF- 파워, gas-inlet, pumping-speed등의 조정 변수를 비롯한 여러 가지 장치 변수들의 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.356-357
• /
• 2006

Tin oxide thin films have been prepared on display glass from mixtures of dibutyl tin diacetate as a tin source, oxygen as an oxidant by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The relationships between the properties of tin oxide thin films and various reaction parameters such as the deposition temperature, deposition time and the oxygen gas flow rate were studied. As the deposition temperature increased, the texture plane of $SnO_2$ changed from (200) plane to denser (211) and (110) planes. Lower deposition temperature and thinner thickness of deposited film led to decreasing grain size, surface roughness and electrical resistivity of the formed thin films at $325{\sim}425^{\circ}C$. The properties of fabricated $SnO_2$ films are highly changed with variations of substrate temperature and deposition time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.431-432
• /
• 2007

In this study, we used screen printing on the rear glass with silver electrodes, phosphor and a dielectric which is on the silver electrodes, and carried out firing in the temperature of $550^{\circ}C$, $570^{\circ}C$, $450^{\circ}C$ each. To seal the rear and top glass together, we used crystalline frit paste as a sealing material with dispenser and carried out firing up to $450^{\circ}C$. As using this panel, we focused on optimizing the condition which influences characteristics of discharging by the distance between electrodes, electrode structure, type and pressure of gases for FFL.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.119-120
• /
• 2007

반도체 공정에서 사용되는 ILD막질 중 oxy-nitrde(SiON) film은 contact etch stopper, photo공정을 위한 ARL(anti-reflection lay떠 그리고, 후속공정의 plasma damage에 대한 blocking layer로서의 역할을 담당하며 많은 공정에 널리 사용되고 있다. 그러나 막질 자체의 불완전성 (trap site, dangling bond)에 의해 cell current instability(CCI) 특성을 악화 시킬 수 있어 이에 대한 원인규명 및 대책이 요구되었다. 본 연구는 미국 S사(社) super flash memory에서 oxy-nitride 막질 증착 시의 gas flow량에 따른 CCI 특성변화를 연구하고 최적의 공정조건을 제시하고자 한다.

• Journal of Chest Surgery
• /
• v.25 no.5
• /
• pp.451-457
• /
• 1992

The hollow fiber oxygenator is the most advanced one for the cardiopulmoanry bypass. They have two different types of the hollow fiber systems according to the way how the blood go through the fibers. One is inside blood flow type and the other outside type. In order to find out which is better to prevent blood cell destruction, we selected 40 valve replacing patients and divided them into 2 groups prospectively. In group I [n=20], inside blood flow type[BCM-7a], CO2 excretion is more effective than group II, that is partly because of the relative large surface area of the BCM-7. In group II [n=20], outside blood flow type [MAXIMAa], they have better quality to preserve platelet count. We also studied about several other items such as SaO2, Hemoglobin and RBC, WBC, fibrinogen, LDH, plasma hemoglobin, haptoglobulin and so on. But we cannot find any differences between two groups with any statistical meanings [p<0.05]. We conclude that both of two oxygenators are excellent in the aspects of gas exchange and blood cell preservation.