• Applied Chemistry for Engineering
• /
• v.34 no.5
• /
• pp.534-540
• /
• 2023

The high-rate performance is limited by several factors, such as polarization generation, low electrical conductivity, low surface energy, and low electrolyte permeability of CF_X, which is widely used as a cathode active material in the lithium primary battery. Therefore, in this study, we aimed to improve the battery performance by using carbon fluoride modified by surface treatment using oxygen plasma as a cathode for lithium primary batteries. Through XPS and XRD analysis, changes in the surface chemical characteristics and crystal structure of CF_X modified by oxygen plasma treatment were analyzed, and accordingly, the electrochemical characteristics of lithium-ion primary batteries were analyzed and discussed. As a result, the highest number of semi-ionic C-F bonds were formed under the oxygen plasma treatment condition (7.5 minutes) with the lowest fluorine to carbon (F/C) ratio. In addition, the primary cell prepared under this condition using carbon fluoride as the active material of the cathode showed the highest 3 F/C(3 C rate-performance) rate-performance and maintained a relatively high capacity (550 mAh/g) even at high rates. In this study, it was possible to produce lithium primary batteries with high-rate performance by adjusting the fluorine contents of carbon fluoride and the type of carbon-fluorine bonding through oxygen plasma treatment.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.6
• /
• pp.342-345
• /
• 2015

The n -type Hf_0.25Zr_0.25Ti_0.5NiSn_0.998Sb_0.002 Half-Heusler (HH) alloy composition was prepared by using the induction melting method in addition to the mechanical grinding, annealing, and spark plasma sintering processes. Analysis of X-ray diffraction (XRD) results indicated the formation of a pure phase HH structured compound. The electrical and thermal properties at temperatures ranging from room temperature to 718 K were investigated. The electrical conductivity increased with increasing temperatures and demonstrated nondegenerate semiconducting behavior, and a large reduction in the thermal conductivity to the value of 2.5 W/mK at room temperature was observed. With the power factor and thermal conductivity, the dimensionless figure of merit was increased with temperature and measured at 0.94 at 718 K for the compound synthesized by the induction melting process.

• Journal of the Korean Electrochemical Society
• /
• v.8 no.4
• /
• pp.162-167
• /
• 2005

Using Pechini method, we synthesized the $La_{0.6}Ca_{0.41}CrO_3$ (LCC41) and $La_{0.8}Sr_{0.05}Ca_{0.15}CrO_3$ (LSCC) powders for slurry dip coating, and $La_{0.75}Ca_{0.27}CrO_3$ (LCC27) powder for air plasma spray coating. The sintering property of the powders and their coating properties were investigated. The average particle sizes of the LCC41, LSCC, LCC27 were 0.6, 0.9, $1.5{\mu}m$, respectively. The relative density of LCC41 bulk was to be found about 98%. The LSCC coating on anode support prevented Ca migration of the coated LCC41 on the anode some or less, which was confirmed from EDS result. The air plasma spray-coated LCC27 with the dip-coated LCC41 were more dense and showed better electrical conductivity than those of the air plasma spray-coated LCC27 and the dip-coated LSCC and LSCC41. The LCC41 and LCC27 showed good electrical conductivities, but the LSCC had a poor electrical conductivity probably due to low sinterability

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.312-312
• /
• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Korean Journal of Materials Research
• /
• v.20 no.9
• /
• pp.494-499
• /
• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.874-876
• /
• 2009

This is a report on fabrication and electrical characteristics of pentacene OTFT that uses conducting PEDOT/PSS as source drain electrodes. We demonstrate enhanced conductivity of PEDOT/PSS film with glycerol and optimize properties for ink jet printing. We also present the application of oxygen plasma technique in order to favor selective spreading for subsequent inkjet printing.

• Journal of Welding and Joining
• /
• v.26 no.4
• /
• pp.50-54
• /
• 2008

In this research, anode for SOFC has been manufactured from two different kinds of feedstock materials through thermal spraying process and the properties of the coatings were characterized and compared. One kind of feedstock was manufactured from spray drying method which includes nano-components of NiO, YSZ (300 nm) and graphite. And the other is manufactured by blending the micron size NiO coated graphite, YSZ and graphite powders as feedstock materials. Microstructure, mechanical properties and electrical conductivity of the coatings as-sprayed, after oxidation and after hydrogen reduction containing nano composite which is prepared from spray-dried powders were evaluated and compared with the same properties of the coatings prepared from blended powder feedstock. The coatings prepared from the spray dried powders has better properties as they provide larger triple phase boundaries for hydrogen oxidation reaction and is expected to have lower polarization loss for SOFC anode applications than that of the coatings prepared from blended feedstock. A maximum electrical conductivity of 651 S/cm at $800^{\circ}C$ was achieved for the coatings from spray dried powders which much more than that of the average value.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.4
• /
• pp.192-195
• /
• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Journal of the Korean Ceramic Society
• /
• v.40 no.6
• /
• pp.560-565
• /
• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.

• Journal of Industrial Convergence
• /
• v.20 no.10
• /
• pp.33-38
• /
• 2022

In this paper, a simple method of forming a solution-based carbon nanotube (CNT) for use as a conductive material for electronic devices was studied. The CNT thin film coating was performed on the glass by applying the spin coating method and the argon atmospheric pressure plasma process. In order to observe changes in electrical and physical properties according to the number of coatings, samples formed in the same manner from times 1 to 5 were prepared, and surface shape, reflectance, transmittance, absorbance, and sheet resistance were measured for each sample. As the number of coatings increased, the transmittance decreased, and the reflectance and absorptivity increased in the entire measurement wavelength range. Also, as the wavelength decreases, the transmittance decreases, and the reflectance and absorption increase. In the case of electrical properties, it was confirmed that the conductivity was significantly improved when the second coating was applied. In conclusion, in order to replace CNT with a transparent electrode, it is necessary to consider the number of coatings in consideration of reflectivity and electrical conductivity together, and it can be seen that 2 times is optimal.