• Title/Summary/Keyword: Plasma Coating

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Copper Interconnection and Flip Chip Packaging Laboratory Activity for Microelectronics Manufacturing Engineers

  • Moon, Dae-Ho;Ha, Tae-Min;Kim, Boom-Soo;Han, Seung-Soo;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.431-432
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    • 2012
  • In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

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Characterization and Formation Mechanism of Zr-Cu and Zr-Cu-Al Metallic Glass Thin Film by Sputtering Process

  • Lee, Chang-Hun;Sun, Ju-Hyun;Moon, Kyoung-Il;Shin, Seung-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.271-272
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    • 2012
  • Bulk Metallic Glasses (BMGs or amorphous alloy) exhibit high strength and good corrosion resistance. Applications of thin films and micro parts of BMGs have been used a lot since its inception in the research of BMGs. However, Application and fabrication of BMGs are limited to make structural materials. Thin films of BMGs which is sputtered on the surface of structural materials by sputtering process is used to improve limits about application of BMGs. In order to investigate the difference of properties between designed alloys and thin films, we identified that thin films deposited on the surface that have the characteristic of the amorphous films and the composition of designed alloys. Zr-Cu (Cu=30, 35, 38, 40, 50 at.%) and Zr-Cu-Al (Al=10 at.% fixed, Cu=26, 30, 34, 38 at.%) alloys were fabricated with Zr (99.7% purity), Cu (99.997% purity), and Al (99.99% purity) as melting 5 times by arc melting method before rods 2mm in diameter was manufactured. In order to analyze GFA (Glass Forming Ability), rods were observed by Optical Microscopy and SEM and $T_g$, $T_x$, ($T_x$ is crystallization temperature and $T_g$ is the glass transition temperature) and Tm were measured by DTA and DSC. Powder was manufactured by Gas Atomizer and target was sintered using powder in large supercooled liquid region ($=T_x-T_g$) by SPS(Spark Plasma Sintering). Amorphous foil was prepared by RSP process with 5 gram alloy button. The composition of the foil and sputtered thin film was analyzed by EDS and EPMA. In the result of DSC curve, binary alloys ($Zr_{62}Cu_{38}$, $Zr_{60}Cu_{40}$, $Zr_{50}Cu_{50}$) and ternary alloys ($Zr_{64}Al_{10}Cu_{26}$, $Zr_{56}Al_{10}Cu_{34}$, $Zr_{52}Al_{10}Cu_{38}$) have $T_g$ except for $Zr_{70}Cu_{30}$ and $Zr_{60}Al_{10}Cu_{30}$. The compositions with $T_g$ made into powders. Figure shows XRD data of thin film showed similar hollow peak.

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Texturing Multi-crystalline Silicon for Solar Cell (태양전지용 다결정실리콘 웨이퍼의 표면 처리용 텍스쳐링제)

  • Ihm, DaeWoo;Lee, Chang Joon;Suh, SangHyuk
    • Applied Chemistry for Engineering
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    • v.24 no.1
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    • pp.31-37
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    • 2013
  • Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

Surface Morphology of PEO-treated Ti-6Al-4V Alloy after Anodic Titanium Oxide Treatment (ATO 처리후, 플라즈마 전해 산화 처리된 Ti-6Al-4V 합금의 표면 형태)

  • Kim, Seung-Pyo;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.75-75
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    • 2018
  • Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

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Removal/Recovery of VOCs Using a Rubbery Polymeric Membrane (Rubbery 고분가 막을 이용한 휘발성 유기화학물의 제거 및 회수)

  • Cha, Jun-Seok
    • Membrane Journal
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    • v.6 no.3
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    • pp.173-181
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    • 1996
  • Common volatile organic compounds(VOCs) such as toluene and methanol were removed successfully from N$_{2}$ using a novel silicone-coated hollow fiber membrane module. This novel membrane is a thin film composite(TFC) and was highly efficient in removing VOCs selectively from a N$_{2}$ stream. This membrane had some innate advantages over other silicone-based membrane in that the selective barrier was ultrathin(~1 $\mu$m) and the porosity of the polypropylene substrate was high which leads to a low permeation resistance. The substram was very strongly bonded to the coating layer by plasma polymerization and can withstand a very high pressure. A small hollow fiber module having a length of 25cm and 50 fibers could remove 96~99% of toluene as well as methanol vapors when the feed flow rate was up to 60cc/min. The percent removal of VOCs were even higher when the feed inlet concentration was higher. This process is especially suitable for treating streams having a low flow rate and high VOCs concentration. The permeances of VOCs through this membrane was in the range of $4~30 \times 10^{-9}gmol/sec \cdot cm^{2}\cdot cmHg$ for both toluene and methanol, and nitrogen permeance was between $3~9 \times 10^{-10}gmol/sec \cdot cm^{2} \cdot cmHg$. High separation factor between 10~55 for toluene/N$_{2}$ and 15~125 for methanol/N$_{2}$ were obtained depending on the feed flow rate ranges and feed VOCs concentration levels.

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Effect of Al2O3 Inter-Layer Grown on FeCrAl Alloy Foam to Improve the Dispersion and Stability of NiO Catalysts (NiO 촉매의 분산성 및 안정성 향상을 위하여 FeCrAl 합금 폼 위에 성장된 Al2O3 Inter-Layer 효과)

  • Lee, Yu-Jin;Koo, Bon-Ryul;Baek, Seong-Ho;Park, Man-Ho;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.25 no.8
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    • pp.391-397
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    • 2015
  • NiO catalysts/$Al_2O_3$/FeCrAl alloy foam for hydrogen production was prepared using atomic layer deposition (ALD) and subsequent dip-coating methods. FeCrAl alloy foam and $Al_2O_3$ inter-layer were used as catalyst supports. To improve the dispersion and stability of NiO catalysts, an $Al_2O_3$ inter-layer was introduced and their thickness was systematically controlled to 0, 20, 50 and 80 nm using an ALD technique. The structural, chemical bonding and morphological properties (including dispersion) of the NiO catalysts/$Al_2O_3$/FeCrAl alloy foam were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and scanning electron microscopy-energy dispersive spectroscopy. In particular, to evaluate the stability of the NiO catalysts grown on $Al_2O_3$/FeCrAl alloy foam, chronoamperometry tests were performed and then the ingredient amounts of electrolytes were analyzed via inductively coupled plasma spectrometer. We found that the introduction of $Al_2O_3$ inter-layer improved the dispersion and stability of the NiO catalysts on the supports. Thus, when an $Al_2O_3$ inter-layer with a 80 nm thickness was grown between the FeCrAl alloy foam and the NiO catalysts, it indicated improved dispersion and stability of the NiO catalysts compared to the other samples. The performance improvement can be explained by optimum thickness of $Al_2O_3$ inter-layer resulting from the role of a passivation layer.

Evaluation of Titanium-nitride Coated Crown: Surface Hardness, Corrosion Resistance and Color Sustainability (타이타늄-질소 코팅된 금속관에 대한 평가: 표면 경도, 부식 저항성, 색조 안정성)

  • Kim, Hyojin;Lim, Sumin;Kim, JinYoung
    • Journal of the korean academy of Pediatric Dentistry
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    • v.48 no.3
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    • pp.344-351
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    • 2021
  • The purpose of this study was to compare surface hardness between titanium-nitride coated crowns (TiNCs) and stainless steel crowns (SSCs), and to evaluate the corrosion resistance and color sustainability of TiNCs. Ten TiNCs and 10 SSCs were used for the hardness test. Measurement was performed 30 times for each type of crowns, and the mean values were compared. Metallic raw material plates (before being processed into crowns) of TiNCs and SSCs were prepared for the corrosion resistance test. The total amounts of metal ion releases in the test solution were detected by inductively coupled plasma-optical emission spectrometry. Five TiNCs were subjected to the color sustainability test by applying repetitive brushing forces. The mean hardness values of TiNC group and SSC group were 395.53 ± 105.90 Hv and 278.70 ± 31.45 Hv respectively. Hardness of TiNCs were significantly higher than that of SSCs. The total amounts of metal ion releases from the materials of TiNCs and SSCs satisfied the criterion in International Organization for Standardization 22674. The results mean that TiNCs and SSCs were not harmful in an acidic environment. The golden coating was stable against the repetitive physical stimulations for a given period time.

Electrochemical Characterization of Anti-Corrosion Film Coated Metal Conditioner Surfaces for Tungsten CMP Applications (텅스텐 화학적-기계적 연마 공정에서 부식방지막이 증착된 금속 컨디셔너 표면의 전기화학적 특성평가)

  • Cho, Byoung-Jun;Kwon, Tae-Young;Kim, Hyuk-Min;Venkatesh, Prasanna;Park, Moon-Seok;Park, Jin-Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.61-66
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    • 2012
  • Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.