• Advances in aircraft and spacecraft science
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• 제1권1호
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• pp.1-14
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• 2014

Physico-chemical changes of the plasma modified titanium alloy [Ti-6Al-4V] surface were studied with respect to their crystallographic changes by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM).The plasma-treatment of surface was carried out to enhance adhesion of high performance nano reinforced epoxy adhesive, a phenomenon that was manifested in subsequent experimental results. The enhancement of adhesion as a consequence of improved spreading and wetting on metal surface was studied by contact angle (sessile drop method) and surface energy determination, which shows a distinct increase in polar component of surface energy. The synergism in bond strength was established by analyzing the lap-shear strength of titanium laminate. The extent of enhancement in thermal stability of the dispersed nanosilica particles reinforced epoxy adhesive was studied by Thermo Gravimetric Analysis (TGA), which shows an increase in onset of degradation and high amount of residuals at the high temperature range under study. The fractured surfaces of the joint were examined by Scanning electron microscope (SEM).

• 한국표면공학회지
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• 제38권2호
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• pp.60-64
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• 2005

The ICP-CVD (inductively coupled plasma chemical vapor deposition) process was applied to the deposition of $TiB_2$ films. For plasma generation, 13.56 MHz r.f. power was supplied to 2-turn Cu coil placed inside chamber. And the gas mixture of $TiCl_4,\;BCl_3,\;H_2$ and Ar was used for $TiB_2$ deposition. $TiB_2$ films with high hardness (<40 GPa) were obtained at extremely low deposition temperature $(250^{\circ}C)$, and the films hardness increased with ICP power and gas flow ratio of $TiCl_4/BCl_3$. The film structure was changed from (100) preferred orientation to random orientation with increasing RF power. It is supposed that the enhanced hardness of films was caused by a strong Ti-B chemical bonding of stoichiometric $TiB_2$ films and film densification induced by high density plasma.

• Journal of Information Display
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• 제3권1호
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• pp.11-16
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• 2002

This paper presents a study on the tubeless Plasma Display Panel (PDP) packaging using glass-to-glass electrostatic bonding with intermediate amorphous silicon. The bonded sample sealing the mixed gas with three species showed high strength ranging from 2.5 MPa to 4 MPa. The glass-to-glass bonding for packaging was performed at a low temperature of $180^{\circ}C$ by applying bias of 250 $V_{dc}$ in ambient of mixed gases of He-Ne(27 %)-Xe(3 %). The tubeless packaging was accomplished by bonding the support glass plate of $30mm{\times}50mm$ on the rear glass panel and the capping glass of $20mm{\times}20mm$. The 4-inch color AC-PDP with thickness of 8 mm was successfully fabricated and fully emitted as white color at a firing voltage of 190V.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• 한국산업융합학회 논문집
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• 제25권2_2호
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• pp.309-314
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• 2022

The bonding strength [ISO22674] test was conducted by firing a dedicated ceramic powder on the surface of the dental titanium material treated with micro-arc oxidation. In the test group, an average result value of 34.34 MPa was obtained, and in the control group, a result value of 21.53 MPa was obtained. The bonding strength of the test group was higher than that of the control group by 12.81 MPa, resulting in a 37% improvement in durability of the dental artificial tooth ceramic restoration.

• 대한의용생체공학회:의공학회지
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• 제28권4호
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• pp.484-493
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• 2007

Two polymeric prodrugs of PGE1 (prodrugs IVg and PNg) were newly synthesized. The drug conjugation proceeded in quantitative yield without decomposition of PGE1 to PGA1. With two types conjugates, PEG-PGE1 and PN-PGE1 with different spacer groups, we first discovered a possibility of slow release of PGE1 in blood circulatory system. PGE1 is conjugated with PEG and PN through the long alkylene spacers, and their availability as polymeric prodrugs is evaluated. Their drug-releasing behavior was examined both in phosphate buffer (pH=7.4) and rat plasma. Each prodrug was known to be highly stabile in the buffer solution. The drug-releasing rate became much faster in rat plasma than in the buffer solution due to the acceleration by the plasma enzymes. The drug-release was found to reach a plateau in rat plasma because the released PGE1 or its derivatives may be captured or decomposed by the plasma proteins. The slower drug-releasing rate of pro drug PNg in rat plasma is reasonably attributed to the molecular aggregation due to the hydrophobic bonding between the PGE1 moieties and spacers.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.59-62
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• 2017

In this paper, atmospheric pressure plasma treatment was proposed for high performance indium gallium zinc oxide thin film transistor (IGZO TFT). RF Ar plasma treatment is performed at room temperature under atmospheric pressure as a simple and cost effective channel surface treatment method. The experimental results show that field effect mobility can be enhanced by $2.51cm^2/V{\cdot}s$ from $1.69cm^2/V{\cdot}s$ to $4.20cm^2/V{\cdot}s$ compared with a conventional device without plasma treatment. From X-ray photoelectron spectroscopy (XPS) analysis, the increase of oxygen vacancies and decrease of metal-oxide bonding are observed, which suggests that the suggested atmospheric Ar plasma treatment is a cost-effective useful process method to control the IGZO TFT performance.

• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2139-2146
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• 2023

During reactor operation, the divertor must withstand unprecedented simultaneous high heat fluxes and high-energy neutron irradiation. The extremely severe service environment of the divertor imposes a huge challenge to the bonding quality of divertor joints, i.e., the joints must withstand thermal, mechanical and neutron loads, as well as cyclic mode of operation. In this paper, potassium-doped tungsten (KW) is selected as the plasma facing material (PFM), oxygen-free copper (OFC) as the interlayer, oxide dispersion strengthened copper (ODS-Cu) alloy as the heat sink material, and reduced activation ferritic/martensitic (RAFM) steel as the structural material. In this study, a vacuum brazing technology is proposed and optimized to bond Cu and ODS-Cu alloy with the silver-free brazing material CuSnTi. The most appropriate brazing parameters are a brazing temperature of 940 ℃ and a holding time of 15 min. High-quality bonding interfaces have been successfully obtained by vacuum brazing technology, and the average shear strength of the as-obtained KW/Cu and ODS-Cu alloy joints is ~268 MPa. And a fabrication route for manufacturing the flat-type divertor target based on brazing technology is set. For evaluating the reliability of the fabrication technologies under the reactor relevant condition, the high heat flux test at 20 MW/m² for the as-manufactured flat-type KW/Cu/ODS-Cu/RAFM mockup is carried out by using the Electron-beam Material testing Scenario (EMS-60) with water cooling. This paper reports the improved vacuum brazing technology to connect Cu to ODS-Cu alloy and summarizes the production route, high heat flux (HHF) test, the pre and post non-destructive examination, and the surface results of the flat-type KW/Cu/ODS-Cu/RAFM mockup after the HHF test. The test results demonstrate that the mockup manufactured according to the fabrication route still have structural and interfacial integrity under cyclic high heat loads.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.21-25
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• 2017

The shape of the reflection spectrum is complex and appears to overlap with several signals, because the surface state is uneven due to the natural oxide film, so that the spectrum becomes a complicated signal shape divided into regions 1 and 2 due to diffuse reflection. On the other hand, it is seen that the reflection spectrum after PEO surface treatment is overlapped with several signals. In addition, the reflectance of the energy band varies from 1.32 to 1.46 eV. Usually, the MgO-type oxide film was observed at an energy band of ~4.2 eV. The thickness of the oxide film was increased as the DC voltage was increased by the thin film thickness meter (QuaNix; 7500M) after Plasma Electrolytic Oxidation (; PEO) surface treatment. This is because the higher the DC voltage, the easier the binding of the $OH^-$ ions in the solution solution and the $Mg^+$ ions of the magnesium alloy. An important part of the bonding of ordinary ions is the energy source (plasma) which can promote bonding. However, when a certain threshold voltage or more is applied, the material is adversely affected. The oxide film of the surface may be destroyed without increasing the thickness of the oxide film, that is, whitening of the material may occur.