• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.79-90
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• 2007

Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

• Journal of Biomedical Engineering Research
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• v.27 no.6
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• pp.418-426
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• 2006

In the artificial heart application, productivity and hemodynamic properties of artificial heart valves are crucial in successiful application to long term in vivo trials. This paper is about manufacture and assessment of trileaflet polymer heart valves using vacuum forming process(VFP). The VFP has many advantages such as reduced fabrication time, reproducibility due to relatively easy and simple process for manufacturing. Prior to VFP of trileaflet polymer heart valves, polyurethane(Pellethane 2363 80AE, Dow Chemical) sheet was prepared by extrusion. The sheets were heated and formed to mold shape by vacuum pressure. The vacuum formed trileaflet polymer heart valves fabrication is composed of two step method, first, leaflet forming and second, conduit forming. This two-step forming process made the leaflet-conduit bonding stable with any organic solvents. Hydrodynamic properties and hemocompatibility of the vacuum formed trileaflet polymer heart valves was compared with sorin bicarbon bileaflet heart valve. The percent effective orifice area of vacuum formed trileaflet polymer heart valves was inferior to bileaflet heart valve, but the increase of plasma free hemoglobin level which reflect blood damage was superior in vacuum formed trileaflet polymer heart valves Vacuum formed trileaflet polymer heart valves has high productivity, and superior hemodynamic property than bileaflet heart valves. Low manufacturing cost and blood compatible trileaflet polymer heart valves shows the advantages of vacuum forming process, and these results give feasibility in in vivo animal trials in near future, and the clinical artificial heart development program.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.184-189
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• 2002

This study, compared with data of PbO-base glass system is a part of new glass composition design with Bi-base composition for PDP Rib. As $Bi_2O_3-B_2O_3-ZnO$ glass composition including Bi, which have similar density value and work facility to PbO, properties of softening point, thermal expansion coefficient, chemical durability, dielectric constant, and structural changing by XPS were investigated. $Bi_2O_3-B_2O_3-ZnO$ glass system, added 50∼80 wt% $Bi_2O_3$ widely, were presented 400∼480$^{\circ}C$ softening temperature, $68{\sim}72{\times}10^{-7}/^{\circ}C$ thermal expansion coefficient and 13∼25 dielectric constant. These results were showed similar physical properties with Pb-base glass system of same composition content, application possibility as starting composition of rib material was identified through micro-control of components and physical properties. The bonding energy of $O_{1s}$ as the $Bi_2O_3$ content decreasing was increased and full width at half-maximum (FWHM) was decreased, which is caused by non-bridging oxygen increasing.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.479-486
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• 2007

Four point bending is used to study the dependences of bond strength of benzocyclobutene(BCB) bonded wafers and BCB thickness, the use of an adhesion promoter, and the materials being bonded. The bond strength depends linearly on BCB thickness, due to the thickness-dependent contribution of the plastic dissipation energy of the BCB and thickness independence of BCB yield strength. The bond strength increases by about a factor of two with an adhesion promoter for both $2.6{\mu}m$ and $0.4{\mu}m$ thick BCB, because of the formation of covalent bonds between adhesion promoter and the surface of the bonded materials. The bond strength at the interface between a silicon wafer with deposited oxide and BCB is about a factor of three higher than that at the interface between a glass wafer and BCB. This difference in bond strength is attributed to the difference in Si-O bond density at the interfaces. At the interfaces between plasma enhanced chemical vapor deposited (PECVD) oxide coated silicon wafers and BCB, and between thermally grown oxide on silicon wafers and BCB, 12~13 and $15{\sim}16bonds/nm^2$ need to be broken. This corresponds to the observed bond energies, $G_0s$, of 18 and $22J/m^2$, respectively. Maximum 7~8 Si-O $bonds/nm^2$ are needed to explain the $5J/m^2$ at the interfaces between glass wafers and BCB.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.24 no.3
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• pp.263-271
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• 2014

Objectives: Along with the several cases of pulmonary disorders caused by exposure to indium that have been reported in Japan, China, and the United States, cases of Korean workers involved in processes that require handling of indium compounds with potential risk of exposure to indium compounds have also been reported. We performed biological monitoring for workers in various target manufacturing processes of indium, indium oxide, and indium tin oxide(ITO)/indium zinc oxide(IZO) in domestic factories. Materials: As biological exposure indices, we measured serum concentrations of indium using inductively coupled plasma mass spectrometry, and Krebs von den Lungen 6(KL-6) and surfactant protein D(SP-D) using enzyme-linked immunosorbent assays. We classified the ITO/IZO target manufacturing process into powdering, mixing, molding, sintering, polishing, bonding, and finishing. Results: The powdering process workers showed the highest serum indium level. The mixing and polishing process workers also showed high serum indium levels. In the powdering process, the mean indium serum concentration in the workers exceeded $3{\mu}g/L$, the reference value in Japan. Of the powdering, mixing, and polishing process workers, 83.3%, 50.0%, and 24.5%, respectively, had values exceeding the reference value in Japan. We suppose that the reason of the higher prevalence of high indium concentrations in powder processing workers was that most of the particles in the powdering process were respirable dust smaller than $10{\mu}m$. The mean KL-6 and SP-D concentrations were high in the powdering, mixing, and polishing process workers. Therefore, the workers in these processes who were at greater risk of exposure to indium powder were those who had higher serum levels of indium, as well as KL-6 and SP-D. We observed significant differences in serum indium, KL-6, and SP-D levels between the process groups. Conclusions: Five among the seven reported cases of "indium lung" in Japan involved polishing process workers. Polishing process workers in Korea also had high serum levels of indium, KL-6, and SP-D. The outcomes of this study can be used as essential bases for establishing biological monitoring measures for workers handling indium compounds, and for developing health-care guidelines and special medical surveillance in Korea.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.391-397
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• 2015

NiO catalysts/$Al_2O_3$/FeCrAl alloy foam for hydrogen production was prepared using atomic layer deposition (ALD) and subsequent dip-coating methods. FeCrAl alloy foam and $Al_2O_3$ inter-layer were used as catalyst supports. To improve the dispersion and stability of NiO catalysts, an $Al_2O_3$ inter-layer was introduced and their thickness was systematically controlled to 0, 20, 50 and 80 nm using an ALD technique. The structural, chemical bonding and morphological properties (including dispersion) of the NiO catalysts/$Al_2O_3$/FeCrAl alloy foam were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and scanning electron microscopy-energy dispersive spectroscopy. In particular, to evaluate the stability of the NiO catalysts grown on $Al_2O_3$/FeCrAl alloy foam, chronoamperometry tests were performed and then the ingredient amounts of electrolytes were analyzed via inductively coupled plasma spectrometer. We found that the introduction of $Al_2O_3$ inter-layer improved the dispersion and stability of the NiO catalysts on the supports. Thus, when an $Al_2O_3$ inter-layer with a 80 nm thickness was grown between the FeCrAl alloy foam and the NiO catalysts, it indicated improved dispersion and stability of the NiO catalysts compared to the other samples. The performance improvement can be explained by optimum thickness of $Al_2O_3$ inter-layer resulting from the role of a passivation layer.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.