• Korean Journal of Materials Research
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• v.12 no.12
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• pp.897-903
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• 2002

Morphological evolution and growth mechanism at the solid/liquid interface during solidification were investigated in the Ni-base superalloy GTD111M by directional soldification and quenching(DSQ) technique. The experiments were conducted by changing solidification rate(V) and thermal gradient(G) which are major solidification process variables. High thermal gradient condition could be obtained by increasing the furnace temperature and closely attaching the heating and cooling zones in the Bridgeman type furnace. The dendritic/equiaxed transition was found in the G/V value lower than $0.05$\times$10{^3}^{\circ}C$s/$\textrm{mm}^2$, and the planar interface of the MC-${\gamma}$ eutectic was found under $17 $\times$ 10{^3}^{\circ}C$ s/$\textrm{mm}^2$. It was confirmed that the dendrite spacing depended on the cooling rate(GV), and the primary spacing was affected by the thermal gradient more than solidification rate. The dendrite lengths were decreased as increasing the thermal graditne, and the dendrite tip temperature was close to the liquidus temperature at $50 \mu\textrm{m}$/s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.31-36
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• 2003

We investigated dry etching of GaAs and AlGaAs in a high density planar inductively coupled plasma system with $BCl_3$ and $BCl_3/Ar$ gas chemistry. A detailed process study as a function of ICP source power, RIE chuck power and $BCl_3/Ar$ mixing ratio was performed. At this time, chamber pressure was fixed at 7.5 mTorr. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RE chuck power. It was also found that etch rate of GaAs in $BCl_3$ gas with 25% Ar addition was superior to that of GaAs in a pure $BCl_3$ (20 sccm $BCl_3$) plasma. The result was same with AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AIGaAs features etched at 20 sccm $BCl_3$ and $15BCl_3/5Ar$ with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.361-365
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• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.113-113
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• 2008

Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.

• Journal of the Korean Magnetics Society
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• v.8 no.4
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• pp.241-248
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• 1998

In accordance with tendency to miniaturization and high frequency operation of electronic products, extensive efforts of miniaturizing magnetic devices such as inductors, transformers and magnetic sensors are being made. In order to study on fabrication and characteristic of micro-magnetic devices, we carried out two sets of experiments. One is to develop a magnetic film that is suitable for high frequency operation, and the other is to develop the fabrication processes for realizing the micro-coil with meander shape. Magnetic films were composed of FeTa(N,C) fabricated by DC magnetron sputtering system. Their microstructures were nanocrystalline structure and magnetic properties showed Bs:13~17 kG, Hc:0.1~0.2 Oe and $\mu$':2000~4000. Cu coil pattern fabricated by selective electroplating process showed good electrical conductivity. In the case of air core inductors, inductance (L) of 50 nH, resonance frequency $(f_R)$ of 700 MHz, and quality factor (Q) of 30 at 200 MHz could be obtained. In the case of close type magnetic inductors, inductance (L) of 150 nH, resonance frequency $(f_R)$ of 100 MHz, and quality factor (Q) of 4 at 10~30 MHz could be obtained.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.44-50
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• 2004

In this paper, a DBM(Doubly Balanced Mixer) of 2 GHz is implemented on FR4 substrate. The structure of doubly balanced mixer requires, in general, two batons and a quad diode. For balun, a novel planar balun using microstrip to CPS is suggested and designed. The suggested balun shows the phase imbalance of 180$^{\circ}$${\pm}$ 1.5$^{\circ}$and the amplitude imbalance of ${\pm}$ 0.2 ㏈ for 1.5 to 2.5 GHz. Using the balun, DBM is succesfully implemented, and the measured conversion loss of up/down converter show about 6 ㏈ over the bandwidth. The balun may be applicable for MMIC DBM with the process supporting backside via thourgh more study.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1475-1482
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• 2009

In this paper, a computer simulation is developed for isotachophoretic protein separation in a serpentine micro channel for optimal lab on a chip design using 2D Finite Element Method. This 2D ITP model is composed of 5 components such as hydrochloric acid as Leader, caproic acid as terminator, acetic acid and benzoic acid as two proteins, and histindine as background electrolyte. The computer model is based on mass conservation equation for 5 components, charge conservation equation for electric potential, and electro neutrality condition for pH calculation. For the validation of the 2D spatial ITP model, the results are compared with the Simul5 developed by Bohuslav Gas Group. The simulation results are in a good agreement in a ID planar channel. This proves the precision of our model. The 2Dproteinseparation is conducted in a 2D curved channel for Lab on a chip design and dispersions of proteins are revealed during the electrophoretic process in a curved shape.