• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.306-309
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• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 제6회 파동 및 레이저 학술발표회 Prodeedings of 6th Conference on Waves and Lasers
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• pp.190-193
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• 1991

The monolithically integrated receiver OEIC using InGaAs/InP PIN PD, junction FET's and bias resistor has been fabricated on semi-insulating InP substrate. The fabrication process is highly compatible between PD and self-aligned JFET, and reduction in gate length is achieved using an anisotropic selective etching and a non-planar OMVPE process. The PIN photodetector with a 80 ${\mu}{\textrm}{m}$ diameter exhibits current of less than 5 nA and a capacitance of about 0.35 pF at -5 V bias voltage. An extrinsic transconductance and a gate-source capacitance of the JFET with 4 ${\mu}{\textrm}{m}$ gate length (gate width = 150 ${\mu}{\textrm}{m}$) are typically 45 mS/mm and 0.67 pF at 0 V, respectively. A voltage gain of the pre-amplifier is 5.5.

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권6호
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• pp.300-305
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• 2004

In this paper, new design equations based on the pole-zero analysis for multi-layered interdigital stripline linear group delay bandpass filter with tap input ports are presented. As a design example, a four-pole group delay filter with center frequency of 2.14GHz, bandwidth of 160MHz, and group delay variation of $\pm$0.1nS for LTCC technology or multilayered PCB technology is designed. In the design process, it is not necessary to simulate the entire structure, as the simulation of half structures is sufficient. Good results can be attained after the optimizing process was performed three times using the proposed equations and a commercial EM simulator.

• 소성∙가공
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• 제4권3호
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• pp.222-232
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• 1995

The planar anisotripic FEM analysis for predicting earing profiles and draw-in amounts in the deep-drawing process is introduced. An implicit, incremental, updated Lagrangian formulation with a rigid-viscoplastic constitutive equation is employed. Contact and friction are considered through the mesh-based unit vector and normal contact pressure. The consistent full set of governing relations, which is comprising euilbrium and geometric constraint equations, is appropriately linearized. Barlat's strain-rate potential is employed, whose in-plane anisotropic properties are taken into account with anisotropic coefficients and potential parameters. The linear triangular membrane elements are used for depicting the formed sheet. In the numerical simulations of deep drawing processes of a flat-top cylindrical cup for 2090-T3 aluminum alloy sheet show good agreement with experiments, although some discrepancies were observed in the directional trend of cup height and thickness strains.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1997년도 추계학술대회논문집
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• pp.24-27
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• 1997

In the present work, rigid-plastic continuum elements employing the shape change and anisotropic effects are derived for the purpose of applying more realistic blankholding force condition in three-dimensional finite element analysis of sheet metal forming process. In order to incorporate the effect of shape change effectively in the derivation of finite element equation using continuum element for sheet metal forming, the convected coordinate system is introduced, rendering the analysis more rigorous and accurate. The formulation is extended to cover the orthotropic material using Hill's quadratic yield function. For the purpose of applying more realistic blankholding force condition, distributed normal and associated frictional tangent forces are employed in the blankholder, which is pressed normal and associated frictional tangent forces are employed in the blankholder, which is pressed against the flange until the resultant contact force with the blank reaches the prescribed value. As an example of sheet metal forming process coupling the effect of planar anisotropy and that of blankholding boundary condition, circular cup deep drawing has been analyzed considering both effects together.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.411-414
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• 2005

We have developed a transflective liquid crystal display (LCD) with a single cell gap and a low twisted nematic (LTN) mode in combination with a self-integrated retardation layer. The retardation layer was made of UV curable liquid crystalline material in one step of photo masking process and has both the homeotropic and the planar parts. The proposed transflective configuration has advantages in a simple fabrication process, and the possibility for a single driving scheme due to the similarity between the transmittance and the reflectance.

• 전기의세계
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• 제30권4호
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• pp.227-230
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• 1981

The variation of sheet resistance and the reduction of masking oxide thickness with the flow rate of nitrogen gas has been measured in Boron predeposition process with Planar Diffusion source, BN-975. At 900.deg. C, the sheet resistance varied as much as 75% when the nitrogen flow rate was changed from 0.4 liters/min to 2.0 liters/min. At 975.deg. C, however, only 12% of sheet resistance variation was observed under the same flow rate change. The reduction of masking oxide thickness at 975.deg. C for a 5 min predeposition was 600 nm when the nitrogen flow rate was 0.4 liters/min. When the flow rate incresased to 1.9 liters/min, however, only 100nm of masking oxide was consumed in a similar predeposition process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.54.2-54.2
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• 2012

Solid-state dewetting of thin films is a process through which continuous solid films decay to form islands. Dewetting of thin films has long been a critical issue in microelectronics and much effort has been made to prevent the process and enhance the stability of films. On the other hand, dewetting has also been purposely induced to create arrays of particles and other structures for applications, including plasmonic structures and catalysts for growing nanotube and nanowire. We have investigated ways of producing regular structures via templated dewetting of thin films. Mainly, two different approaches have been used in our works to template dewetting of thin films: periodic topographical templating and planar patterning of epitaxially-grown films. Dewetting of topographically-patterned thin films results in the formation of nanoparticle arrays with spatial and crystallographic orders. Morphological evolution during templated-dewetting of single crystal films occurs in deterministic ways because of geometric and crystallographic constraints, and leads to the formation of regular structures with smaller sizes and more complex shapes than the initial patches. These results will be reviewed in this presentation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2013

Transparent conducting nanoscale-domes were periodically patterned on a Si substrate by nanoimprint method. Transparent conductor of indium-tin-oxide (ITO) was shaped as a nanodome, which effectively drives the incident light effectively into a light-absorber and therefore induces a substantially enhanced photo-response. An ITO nanodome is electrically isolated from the neighboring nanodomes. This structure benefits to provide a low contact between a Si substrate and a front metal electrode giving an efficient electrical path. The ITO nanodome device showed a significantly enhanced photo-response of 6010 from the value of 72.9 of a planar ITO film. The electrical and optical advantage of an ITO nanodome is suitable for various photoelectric applications.

• Bulletin of the Korean Chemical Society
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• 제15권8호
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• pp.658-662
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• 1994

Ab initio and extended Huckel calculations have been applied to discuss the electronic structure, ring inversion barrier, and geometry of the $Cp_2TiS_3$ compound. The deformation of four membered ring in the planar geometry is originated from a second-order Jahn-Teller distortion due to the small energy gap between HOMO and LUMO on the basis of extended Huckel calculations. The puckered $C_s$ geometry is stabilized by the interaction of the $x^2-y^2$ metal orbital with the hybrid orbital in sulfur. Ab initio calculations have been carried out to explore the ring inversion process for the model $Cl_2TiS_3$ compound. We have optimized $C_s$ and $C_{2v}$ structures of the model compound at the RHF level. The energy barriers for the ring inversion are sensitive to the used basis set. With 4-31$G^*$ for the Cl and S ligands, the barriers are computed to be 8.41 kcal/mol at MP2 and 8.02 kcal/mol at MP4 level.