• Analytical Science and Technology
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• v.5 no.1
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• pp.121-126
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• 1992

Transmission electron microscopy was used to investigate the structure of GaAs ${\Sigma}=19$, [110] tilt grain boundaries. Relative positions of Ga and As atoms in each grain on either side of the boundaries were determined by examining the dynamical coupling between HOLZ reflections and(200) beams. No inversion symmetry was present across the boundaries. These boundaries were observed to have a strong tendency to lie parallel to {331} planes. The atomic structure and lattice translation at these boundaries was studied in detail by high-resolution transmission electron microscopy(HRTEM). The boundary consists of units of 5-, 7-, and two 6-member rings.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.44 no.4
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• pp.128-135
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• 2021

WDM(Wavelength Division Multiplexing) is called a wavelength division multiplexing optical transmission method and is a next-generation optical transmission technology. Case company F has recently developed and sold PLC(Planar Lightwave Circuit), a key element necessary for WDM system production. Although Chinese processing companies are being used as a global outsourcing strategy to increase price competitiveness by lowering manufacturing unit prices, the average defect rate of products manufactured by Chinese processing companies is more than 50%, causing many problems. However, Chinese processing companies are trying to avoid responsibility, saying that the cause of the defect is the defective PLC Wafer provided by Company F. Therefore, in this study, the responsibility of the PLC defect is clearly identified through estimating the defect rate of PLC using the sampling inspection method, and the improvement plan for each cause of the PLC defect for PLC yeild improvement is proposed. The result of this research will greatly contribute to eliminating the controversy over providing the cause of defects between global outsourcing companies and the head office. In addition, it is expected to form a partnership with Company F and a Chinese processing company, which will serve as a cornerstone for successful global outsourcing. In the future, it is necessary to increase the reliability of the PLC yield calculation by extracting more precisely the number of defects.

• Journal of the Society of Naval Architects of Korea
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• v.32 no.2
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• pp.32-42
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• 1995

When the thickness becomes so small as in the case of the trailing edge of the propeller blade or when the curvature of the surface varies rapidly as in ship stem, the existing panel method employing a flat-surface panel, obtained by collapsing the original non-planar surface into its mean location, suffers the leakage problem and also gives inaccurate induction upon the field point very close to the panel. The hyperboloidal panel deals with the induction from the dipole distributed on the non-planar surface without approximation, overcoming the defects of the flat-surface panel. This paper introduces two distinct derivations of the formulae to compute the integral for the potential induced by a dipole of uniform density distributed on a non-planar hyperboloidal surface element. One method is based on the Gauss-Bonnet theorem and the other is based on the transformation of the surface integral into a line integral.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.43-49
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• 1997

The dependence of the electrical properties in planar MQW - APD & pn, and p - i - n photodiode implanted with oxygen on the annealing emperatures and ion dose has been investigated. The oxygen implantation was performed for inter-device isolation. The leakage current of as-impanted p-i-n photodiode obtained was less than 50 nA. An annelaing temperature dependence study shows an abrupt increase of leakge current at 600.deg.C for all devices under study. This indicates that donor complex centers introduced by the chemical activity of oxygen increase with increasing annelaing temperatures. Furthermore, leakage current was highly correlated with oxygen dose due to th eimplanted related defects.

• Current Optics and Photonics
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• v.6 no.3
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• pp.260-269
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• 2022

Segmented planar imaging detector for electro-optical reconnaissance (SPIDER) is an emerging technology for optical imaging. However, this novel detection approach is faced with degraded imaging quality. In this study, a 6 × 6 planar waveguide is used after each lenslet to expand the field of view. The imaging principles of field-plane waveguide structures are described in detail. The local multiple-sampling simulation mode is adopted to process the simulation of the improved imaging system. A novel image-reconstruction algorithm based on deep learning is proposed, which can effectively address the defects in imaging quality that arise during image reconstruction. The proposed algorithm is compared to a conventional algorithm to verify its better reconstruction results. The comparison of different scenarios confirms the suitability of the algorithm to the system in this paper.

• Design & Manufacturing
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• v.10 no.1
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• pp.36-40
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• 2016

Connectors transmit electric signals to different parts in compact mobile display products. As products that apply this have become lightweight and smaller in size, there are growing demands for smaller and more integrated connectors, which are internal parts of the products. As a measure to address these demands, there is the planar array connector that minimizes the part by arranging the single-direction BTB connectors to two directions. As connectors become smaller in size and more highly integrated, maintaining intensity to prevent defects during impact and maintaining adhesive force to smoothly transmit electric signals are growing in importance. Thus, in order to identify the impact of concave shaping on improving adhesive power in connector terminal pins as a method to increase the connecting power of planar array connector terminal pins, this study predicted and examined the concave shaping method, number of concave shapes, and the adhesive power according to the size of the concave shape through CAE. For concave shaping, the model that added concave shaping towards the lower part of the connector terminal pin and added spokes for the area pressed down by the concave shaping was 0.74 N, showing increased adhesive force compared to existing models. Furthermore, when applying two concave shaping, rather than just one, there was a tendency for adhesive force to increase. In the case of adhesive power trends according to the size of the concave shaping, adhesive power increased and the width of the concave shape decreased, and the biggest adhesive force trends were shown when the concave shaping depth was 0.01mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.172-172
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• 2009

In this study, we presented comparative discrimination methods to identify various line and planar defects observed in nonpolar a-GaN epilayers on r-sapphire substrates. Unlike the case of conventional c-GaN, which is dominated by perfect threading dislocations, systematic identification of undistinguishable defects using transmission electron microscopy (TEM) is necessary to suppress the propagation of defects in nonpolar GaN epilayers. Cross-sectional TEM images near the [0001] zone axis revealed that perfect mixed and pure screw type dislocations are visible, while pure edge, partial dislocations, and basal stacking faults (BSFs) are not discernible. In tilted cross-sectional TEM images along the [$1\bar{2}10$] zone axis, the dominant defects were BSFs and partial dislocations for the $g=10\bar{1}0$ and 0002 two-beam images, respectively. From plan view TEM images taken along the [$11\bar{2}0$] axis, it was found that the dominantpartial and perfect dislocations were Frank-Shockley with b=${\pm}1/6$<$20\bar{2}3$> and mixed type without an 1 component including b=${\pm}1/3$<$1\bar{2}10$> and ${\pm}1/3$<$\bar{2}110$>, respectively. Prismatic stacking faults were observed as inclined line contrast near the [0001] zone axis and were visible as band contrast in the two-beam images along the [$1\bar{2}10$] and [$11\bar{2}0$] zone axes.

• ETRI Journal
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• v.25 no.2
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.21-26
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• 2003

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.