• Title/Summary/Keyword: Planar Substrate

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The Characteristic of Passive Elements on Aluminum Nitride Substrate (AIN 기판의 수동 소자 특성)

  • Kim, Seung-Yong;Yook, Jong-Min;Nam, Choong-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.2
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    • pp.257-262
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    • 2008
  • In this paper, the key parameters of $CO_2$ laser(focus depth, air blow rate, total laser beam time, number of pulse) are experimented for thru-hole and scribing line on AIN(aluminum nitride) substrate with high thermal conductivity. And, microstrip line & spiral planar inductor are fabricated on AIN substrate using 5 um Cu-plating with self-masking technique. The microstrip line of AIN has 0.1 dB/mm attenuation at 10 GHz and 6 nH spiral planar inductor has 56 maximum quality factor at 1 GHz. Thus, the AIN substrate is promising for GHz applications of high power area.

A New Planar Spiral Inductor with Multi-layered Bragg Reflector for Si-Based RFIC's

  • Mai Linh;Lee Jae-Young;Le Minh-Tuan;Pham Van-Su;Yoon Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.4 no.2
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    • pp.88-91
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    • 2006
  • In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the S11-parameter of the inductor.

A New Planar Spiral Inductor with Multi-layered Bragg Reflector for Si-Based RF IC's

  • Linh Mai;Lee Jae-Young;Tuan Le Minh;Su Pham Van;Yoon Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2006.05a
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    • pp.255-258
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    • 2006
  • In this paper, a novel physical structure for planar spiral inductors is proposed. The spiral inductors were designed and fabricated on multi-layered substrate Bragg-reflector/silicon (BR/Si) wafer. The impacts of multi-layered structure substrate and pattern on characteristics of inductor were studied. Experimental results show that the inductor embedded on Bragg reflector/silicon substrate can achieve the best improvement. At 0.4-1.6 GHz, the Bragg reflector seems to significantly increase the $S_{11}-parameter$ of the inductor.

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Multi-mode Planar Waveguide Fabricated by a (110) Silicon Hard Master

  • Jung, Yu-Min;Kim, Yeong-Cheol
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1106-1110
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    • 2005
  • We fabricated (110) silicon hard master by using anisotropic wet etching for embossing. The etching chemical for the silicon wafer was a TMAH $25\%$ solution. The anisotropic wet etching produces a smooth sidewall surface and the surface roughness of the fabricated master is about 3 nm. After spin coating an organic-inorganic sol-gel hybrid material on a silicon substrate, we employed hot embossing technique operated at a low pressure and temperature to form patterns on the silicon substrate by using the fabricated master. We successfully fabricated the multi-mode planar optical waveguides showing low propagation loss of 0.4 dB/cm. The surface roughness of embossed patterns was uniform for more than 10 times of the embossing processes with a single hydrophobic surface treatment of the silicon hard master.

Advances in MEMS Based Planar VOA

  • Lee, Cheng-Kuo;Huang, RueyShing
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.183-195
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    • 2007
  • MEMS technology is proven to be an enabling technology to realize many components for optical networking applications. Due to its widespread applications, VOA has been one of the most attractive MEMS based key devices in optical communication market. Micromachined shutters and refractive mirrors on top of silicon substrate or on the device layer of SOI (Silicon-on-insulator) substrate are the approaches trapped tremendous research activities, because such approaches enable easier alignment and assembly works. These groups of devices are known as the planar VOAs, or two-dimensional (2-D) VOAs. In this review article, we conduct the comprehensively literature survey with respect to MEMS based planar VOA devices. Apparently MEMS VOA technology is still evolving into a mature technology. MEMS VOA technology is not only the cornerstone to support the future optical communication technology, but the best example for understanding the evolution of optical MEMS technology.

Characteristic Analysis corresponding to cutting edge of Strip Line (스트립 선로의 절단각에 따른 특성 해석)

  • Kim, Tae-Yong;Lee, Hoon-Jae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.10a
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    • pp.58-59
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    • 2011
  • Microstrip line on dielectric substrate depending on the type of its configuration can be applied to be antenna, communication filters, and resonators. When driving frequency is considered more than X-band, unnecessary signal leakage should be occurred because of flowing through the planar circuit at banding position. So leakage signal will affect other planar circuit, and then EMC problem has to be introduced. In this paper, the affection of banding planar circuit on dielectric substrate was investigated.

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Study on Frequency Characteristics of Rectangle Spiral Planar Inductor (사각 나선형 평면 인덕터의 주파수 특성에 관한 연구)

  • Kim, Jae-Wook
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.4
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    • pp.2330-2334
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    • 2014
  • In this study, we confirmed the frequency characteristics of planar spiral inductor based on non-contact method AC coupling for wireless signal transmission. The dielectric constant variation of the substrate does not directly effect the inductance of device but effect the electrostatic capacity of device. Therefore, its change self-resonance frequency. The thickness increment of the substrate increase inductance but decrease self-resonance frequency. Because, the thickness decrement of the substrate make the inside electrostatic capacity increment.

Broadband planar dipole with a t-shaped slit for digital TV Reception (t형 슬릿을 갖는 디지털 TV 수신용 광대역 평면 다이폴)

  • Lee, Jong-Ig;Yeo, Junho;Yang, Myung-Ku;Lee, Yoon-Ju;Kwon, Jun-Hyuk
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.159-160
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    • 2014
  • In this paper, a design method for a broadband planar dipole antenna for the terrestrial digital television (DTV) reception is studied. The proposed antenna is an asymmetrical planar dipole consists of a rectangular patch with an embedded t-shaped slit, and the antenna shape is printed on a side of an FR4 substrate. The effects of geometrical parameters on the antenna performance are examined, and the parameters are adjusted to operate in the DTV frequency band of 470-806 MHz. The prototype antenna is fabricated on an FR4 substrate with a size of $260mm{\times}30mm$. The performance of the antenna is tested experimentally to verify the results of this study.

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Planar Microstrip Patch Antenna for 5G Wireless Applications

  • Kim, Jang-Wook;Jeon, Joo-Seong
    • Journal of the Korea Society of Computer and Information
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    • v.27 no.1
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    • pp.33-41
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    • 2022
  • This paper describes a planar microstrip patch antenna designed on dielectric substrate. Two types of planar microstrip patch antennas are studied for the 5G wireless applications, one type is conventional microstrip structure, the other type is stacked microstrip structure fed by coaxial probe. Using electromagnetically coupling method, stacked microstrip patch antenna employing a multi-layer substrate structure was designed. The results indicate that the proposed stacked microstrip patch antenna performs well at 5G wireless service bandwith a broadband from 3.42GHz to 3.70GHz. The impedance bandwidth(VSWR≤2) is 360MHz(10.28%) from 3.42GHz to 3.78GHz. In this paper, through the designing of a stacked microstrip patch antenna, we have presented the availability for 5G wireless repeater system.

Electro-chemical Mechanical Deposition for Planarization of Cu Interconnect (Cu 배선의 평탄화를 위한 ECMD에 관한 연구)

  • Jeong, Sukhoon;Seo, Heondeok;Park, Boumyoung;Park, Jaehong;Park, Seungmin;Jeong, Moonki;Jeong, Haedo;Kim, Hyoungjae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.9
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    • pp.793-797
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    • 2005
  • This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.