• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.238-242
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• 2007

Today's commercial high resolution satellite imagery such as that provided by IKONOS and QuickBird, offers the potential to extract useful spatial information for geographical database construction and GIS applications. Digital maps supply the most generally used GIS data probiding topography, road, and building information. Currently, the building information provided by digital maps is incompletely constructed for GIS applications due to planar position error and warped shape. We focus on extracting of the accurate building information including position, shape, and height to update the building information of the digital maps and GIS database. In this paper, we propose a new method of 3D building information extraction with a single high resolution satellite image and digital map. Co-registration between the QuickBird image and the 1:1,000 digital maps was carried out automatically using the RPC adjustment model and the building layer of the digital map was projected onto the image. The building roof boundaries were detected using the building layer from the digital map based on the satellite azimuth. The building shape could be modified using a snake algorithm. Then we measured the building height and traced the building bottom automatically using triangular vector structure (TVS) hypothesis. In order to evaluate the proposed method, we estimated accuracy of the extracted building information using LiDAR DSM.

• Fire Science and Engineering
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• v.30 no.3
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• pp.23-30
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• 2016

A fire extinguishing system for a rack warehouse was recently designed, which only consider the gross area and number of stories. However, the design of such a system should take into account not only the planar structuree, but also the elevation perspectives due to its vertical structure. Moreover, the fire load of the commodities palletized on the racks should be considered, in order to design a performance-based fire safety system that is appropriate for these environmental conditions. For this reason, this study analyzed the fire characteristics of the commodities palletized on the racks (pallet + the commodities in a box unit + vinyl packing material), taking into consideration the results of a field investigation conducted in Korea, as well as the Hazard Classifications of Commodities used in other countries. Through this analysis, the heat release rate (HRR) and smoke production rate (SPR) were derived.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Analytical Science and Technology
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• v.5 no.2
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• pp.203-211
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• 1992

Fracture behavior and martensite substructure of Ni-36.5at.%Al alloy were investigated with the addition of vanadium which is known as scavenging element of grain boundary. The fracture surfaces were examined by scanning electron microscopy and the EDX spectrometer was applied for composition analysis of fracture surfaces. The substructure of martensite was studied by transmission electron microscopy. By addition of vanadium, fracture surfaces show mixed modes of intergranular and transgranular fracture and more Al content is found on the grain boundaries. For Ni-36.5at.%Al alloy, the planar faults observed in the martensite plates are the internal twins. By increasing the vanadium content, the modulated structure with stacking faults and dislocations dominates while the twinned martensite disappears. The stacking fault is determined to be extrinsic due to the substitution of V for Al. It is concluded that the segregation of sulfur on the high-energy state stacking fault area suppresses the intergranular fracture.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.136-142
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• 2007

We present two effects of the case currents of a mobile phone on changing the radiation pattern of a PIFA and on enhancing the bandwidth of the monopole antenna. In order to change the radiation pattern, a modification of the ground plane is suggested to suppress the back radiation. The resulting gain is higher than that of a conventional PIFA by 0.5 dB. For enhancing the bandwidth, two parasitic metallic lines are added in the direction orthogonal to the monopole to induce double resonances. The impedance bandwidth of the proposed structure is 341 MHz, which is nearly twice of that of the conventional monopole.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.81-86
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• 1992

The electrophilic and nucleophilic reactions of M(S-S,ph)(N-N,H) (M = Ni(II), Pd(II), Pt(II); (S-S,ph) = 1,2-diphenylethylenedithiolate; (N-N,H)=1,10-phenanthroline) complexes have been investigated. Reaction with norbornadiene depended upon the back donating ability of the central metal ion and produced 2,5-dithia-3,4-diphenyl-tricyclo[4,4,1,0]-undeca-3,8-diene. In the reaction with methyl iodide, the effect of cleavage of (N-N,H) ligand affected the yield of methylated $M(S-S,ph)_2$ product. The structure of the thermolysis product, ${\alpha},{\alpha}{\prime}$-bismethylthiostibene $(CH_3S-SCH_3,ph)$ of methylated complexes indicates that the main product of the nucleophilic reaction is $M(CH_3S-SCH_3,ph)(S-S,ph)$. We have synthesized a new mixed-ligand complex M(S-S,CN)(N-N,H)((S-S,CN) = 1,2-dicyanoethylenedithiolate) through the nucleophilic reaction of ligand.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.2
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• pp.165-170
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• 2016

Nano-scale power splitter based on curved plasmonic waveguides are designed by utilizing the multimode interference (MMI) coupler. To analyze easily the adaptive properties of plasmonic curverd multimode interference coupler(PC-MMIC), the curved form transforms equivalently into a planar form by using conformal transformation method. Also, effective dielectric method and longitudinal modal transmission-line theory are used for simulating the light propagation and optimizing the structural parameters at 3-D guiding geometry. The designed $2{\times}2$ PC-MMIC does not work well for quasi-TM mode case due to the bending structure, and it does not exist 3dB coupling property, in which the power splitting ratio is 50%:50%, for quasi-TE mode case. Further, the coupling efficiency is better when the signal is incident at channel with large curvature radius than small curvature radius.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.782-787
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• 2000

The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.11 no.1
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• pp.92-98
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• 1997

In this paper, the results of the measurement and analysis of extremely low freqency(ELF) eletric field in the vicinity of 154[kV] overhad transmission lines have been described. The planar-type electric field sensor has been fabricated by three dimensional structure with special consideration of taking the power frequency and lower components. The calibration experiments have been carried out according to the procedures of IEEE recommendation. The electric field measuring system has the frequency bandwidth of 7[Hz] to 2.7[MHz] and the response sensitivity of 0.094[mV/V/m]. Also the practical measurements of electric field under an 154[kV] double corcuit overhead transmission lines have been made abd abalyzed. It was known that the lateral electric field profiles under an 154[kV] double circuit overhead transmission lines show the asymmetrical distributions owing to the environmental metal frame structures and their maximum electric field magnitude is less than 3[kV/m]. It can be concluded that the measured results of the electric fields satisfy with all limits or guide -lines of the various authorized international institutes' recommendations.