• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.6
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• pp.612-617
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• 2001

A nondestructive evaluation technique for detecting internal defects of an hot forged Al-Si alloy part is established in this study. Ultrasonic characteristics of various internal planar defects are investigated by experiments for establishing a reliable test procedure. The effect of the angle between ultrasonic energy propagation directions and planar defects on the ultrasonic signal configuration is evaluated in the pulse-echo technique. A characteristic of ultrasonic signal for the internal planar defect located near the edge is also evaluated. The applicability of the through-transmission technique is also discussed. Reliability of the presented approach is validated by the destructive testing for more than 500 specimens.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.699-702
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• 2009

Due to the importance of the SiGe/Si heterostructure in the fields of thermoelectric and electronic applications, SiGe/Si heterostructures have been extensively investigated. For practical applications, thermal stability of the heterostructure during the thermoelectric power generation or fabrication process of electronic devices is of great concern. In this work, we focused on the effect of thermal annealing on the defect configuration in the SiGe/Si heterostructure. The formation mechanism of planar defects in an annealed SiGe/Si heterostructure was investigated by transmission electron microscopy. Due to the interdiffusion of Si and Ge, interface migration phenomena were observed in annealed heterostructures. Because of the strain gradient in the migrated region between the original interface and the migrated interface, the glide of misfit dislocation was observed in the region and planar defects were produced by the interaction of the gliding misfit dislocations. The planar defects were confined to the migrated region, and dislocation pileup by strain gradient was the origin of the confinement of the planar defect.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.5
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• pp.87-95
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• 2004

From the results of AE(Acoustic Emission) source location occurred by the spot exciting as suggested in this research, it has been confirmed that AE technique is quite fruitful in figuring out the location of the occurrence, form, size and direction of the defects. As the results of examining the distribution of event for the angle of crack $\alpha$ to Xs and Ys, as the increases from $0^{\circ}$ ~ $90^{\circ}$, gradually changes its width from the axis Xs to the axis Ys. So event appears approximately similar in its size at the angle of crack $\alpha$=$45^{\circ}$, yet opposite when $\alpha$ is lager. It is believed that this is a phenomenon where its crack legnth $\alpha$, assumed as a planar defect, is to be prcjected toward the direction with a larger size. Thus, it is expected that the application of the experimental method suggested in this study would make it possible to identify the location of the defect in the material in the nondestructive way.

• Journal of Energy Engineering
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• v.24 no.4
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• pp.55-62
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• 2015

It is expected that the size of welding defect affects the mechanical performance of welded medium density polyethylene (MDPE) pipe joints. In this study, butt fusion welded MDPE pipe joints with a single spherical or planar defect of various sizes were studied using experimental crush testing and also by finite element method. The crush test showed that the mechanical performance of crush was not affected by the size and geometry of a single welding defect when the defect size was increased to 45% of the pipe's wall thickness. The simulation results indicated that the effect of the single welding defect on the Von Mises stress distribution near the defect explained the reason of the test results.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.44 no.4
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• pp.128-135
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• 2021

WDM(Wavelength Division Multiplexing) is called a wavelength division multiplexing optical transmission method and is a next-generation optical transmission technology. Case company F has recently developed and sold PLC(Planar Lightwave Circuit), a key element necessary for WDM system production. Although Chinese processing companies are being used as a global outsourcing strategy to increase price competitiveness by lowering manufacturing unit prices, the average defect rate of products manufactured by Chinese processing companies is more than 50%, causing many problems. However, Chinese processing companies are trying to avoid responsibility, saying that the cause of the defect is the defective PLC Wafer provided by Company F. Therefore, in this study, the responsibility of the PLC defect is clearly identified through estimating the defect rate of PLC using the sampling inspection method, and the improvement plan for each cause of the PLC defect for PLC yeild improvement is proposed. The result of this research will greatly contribute to eliminating the controversy over providing the cause of defects between global outsourcing companies and the head office. In addition, it is expected to form a partnership with Company F and a Chinese processing company, which will serve as a cornerstone for successful global outsourcing. In the future, it is necessary to increase the reliability of the PLC yield calculation by extracting more precisely the number of defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.373-377
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• 2000

For 6H-SiC single crystals which was obtained by sublimation growth (modified Lely process), the relation between the defects and the etch pits to be formed at the site of dislocations were discussed. Typical hexagonal etch pits were formed on (0001) basal plane. The similar hexagonal etch pit shapes were formed on the site of micropipe defects and it was realized that internal planar defects was formed with the same matrix crystal structure as grown crystals, through the observation of the etching morphology at those internal defects.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.2
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• pp.87-92
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• 2006

This paper supplements shortcoming of radioactivity check by detecting defect of SWP weld zone using ultrasonic wave. Manufacture 2 stage robot detection systems that can follow weld bead of SWP by method to detect weld defects of SWP that shape of weld bead is complex for this as quantitative. Also, through signal processing ultrasonic wave defect signal system of GUI environment that can grasp easily existence availability of defect because do videotex compose. Ultrasonic wave signal of weld defects develops artificial intelligence style sightseeing system to enhance pattern recognition of weld defects and the classification rate using neural net. Classification of weld defects that do fan Planar defect and that do volume defect of by classify.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1360-1364
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• 2014

In this paper, RCS characteristics on defect pattern of crossed dipole slot FSS having a finite size have been analyzed. To analyze RCS, we applied the electric field integral equation analysis which applies BiCGSTab algorithm with iterative method and uses RWG basis function. To verify the validity of this paper, RCS of PEC sphere has been compared to the theoretical results and FSSs with defect patterns are fabricated and measured. As defect patterns in FSS, missing one column, missing some elements, and discontinuity in surfaces are simulated and compared with the measurement results. Resonant frequency shifts in pass band and changes in bandwidth are observed. From the results, precisely predicting and designing frequency characteristics over defect patterns are essential when applying FSS structures such as FSS radomes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.393-399
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• 1997

H-SiC single crystals were successfully grown by the sublimation method and the optimum growth conditions were established. The grown SiC crystals were about 33 mm in diameter and 11 mm in length. The micropipe density of the polished SiC wafers was 400/$\textrm{cm}^2$, and the planar defect density was 50/$\textrm{cm}^2$. Raman spectroscopy and DCXRD analysis were used to examine the crystallinity of Acheson seeds and the 6H-SiC wafers. As a result, the crystallinity of the 6H-SiC wafers was better than that of Acheson seeds. For examination of the electrical properties of the undopped 6H-SiC wafers Hall measurements were applied. According to the measurements the carrier concentration was estimated to be $3.91{\times}10^{15}/\textrm {cm}^3$ and doping type of the undopped. 6H-SiC wafers was n-type.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.1
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• pp.11-22
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• 2023

A radiating elements fault diagnosis method with simplified radiation pattern measurement procedure was presented for planar active phased array antenna system. For presenting the mentioned method, the technique for linear approximation based on the radiation characteristics of a planar array configuration and a technique for solving a unique solution problem that occur in process of diagnosing a fault in a radiating elements were presented. Based on the presented method and a genetic algorithm, experimental simulations were performed for radiating element defect diagnosis according to various planar active phased array antenna configurations. As a result, it was confirmed that the presented radiating element fault diagnosis method can be smoothly applied to planar active phased antennas having various configurations.