• Journal of Sensor Science and Technology
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• v.14 no.4
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• pp.237-243
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• 2005

Strain gauge type load cell is used widely as weight sensor. However, it has problems such as noise, power consumption, high cost and big size. Semiconductor type piezoresistive pressure sensor is practically used in recent for low hysteresis, good linearity, small size, light weight and strong on vibration. In this paper, we have fabricated the piezoresistive pressure sensor and packaged the miniature weight sensor. We packaged the miniature weight sensor by flip-chip bonding between die and PCB for durability, because the weight sensor is directly contacted on a physical solid distinct from air and oil pressure. We measured the characteristics of the weight sensor, which had the output of $10{\sim}80$ mV on the weight range of $0{\sim}2$ kg. In the result, we could fabricate the weight sensor with an accuracy of 3 %FSO linearity.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.573-577
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• 2009

Piezoresistive pressure sensor have become the successfully-commercialized MEMS product and the related technologies have been well developed over the past decades. Regarding the design methodology, however, the coupled-physics FEM analyses of the transducer itself and the signal-processing circuitry design based on the conventional EDA are separated and both of the analyses were sequentially processed for the full design of the pressure sensor. For the fast and effective R&D, new design methodology is proposed in this paper where the FEM results are linked to the EDA environment and therefore most of the design works can be done in the EDA environments, which means the time-consuming FEM analyses can be minimized. In order to verify the proposed approach, a typical piezoresistive pressure sensor having the silicon diaphragm and piezoresistors was modeled and analyzed based on the proposed methodology. The verification results showed that the simulated results were matched well with the measured data within the 7% difference while the simulation time was reduced less than 5% compared to the conventional methodology. Through the proposed approach, various types of the piezoresistive pressure sensors can be developed in more effective way.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.3
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• pp.187-192
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• 2017

This paper presents an ongoing study to develop a novel pressure sensor by means of a Nano Carbon Piezoresistive Composite (NCPC). The sensor was fabricated using the 3D printing process. We designed a miniaturized cantilever-type sensor electrode to improve the pressure sensing performance and utilized a 3D printer to build a small-sized body. The sensor electrode was made of 2 wt％ MWCNT/epoxy piezoresistive nano-composite, and the sensor body was encapsulated with a pipe plug cap for easy installation to any pressure system. The piezoresistivity responses of the sensor were converted into stable voltage outputs by using a signal processing system, which is similar to a conventional foil strain gauge. We evaluated the pressure-sensing performances using a pressure calibrator in the lab environment. The 3D-printed cantilever electrode pressure sensor showed linear voltage outputs of up to 16,500 KPa, which is a 200％ improvement in the pressure sensing range when compared with the bulk-type electrode used in our previous work.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.165-172
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• 2024

In this study, we investigated the detection properties of piezoresistive carbon nanotubes/polydimethylsiloxane (CNT/PDMS) devices with porous structures under applied pressure. The device, having dimensions of 10 mm × 10 mm × 5 mm, was fabricated with a porosity of 74.5%. To fabricate piezoresistive CNT/PDMS devices, CNTs were added using two different methods. In the first method, the CNTs were mixed with PDMS before the fabrication of the porous structure, while in the second, the CNTs were coated after the fabrication of the porous structure. Various detection properties of the fabricated devices were examined at different applied pressures. The CNT-coated device exhibited stable outputs with lesser variation than the CNT-mixed device. Moreover, the CNT-coated device exhibited improved reaction properties. The response time of the CNT-coated device was 1 min, which was approximately about 20 times faster than that of the CNT-mixed device. Considering these properties, CNT-coated devices are more suitable for sensing devices. To verify the CNT-coated device as a real sensor, it was applied to the gripping sensor system. A multichannel sensor system was used to measure the pressure distribution of the gripping sensor system. Under various gripping conditions, this system successfully measured the distributed pressures and exhibited stable dynamic responses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.350-354
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• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.175-181
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• 2004

A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/$SiO_{2}$/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over $120^{\circ}C$, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of $183.6{\mu}V/V{\cdot}kPa$, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.121-126
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• 2012

Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is $200{\mu}m$ and $190{\mu}m$, respectively. The gap between sensing elements is only $10{\mu}m$. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with $10{\mu}m$ alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.559-560
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• 2006

The paper presents solutions of conventional piezoresistive pressure sensors. Deflection of diaphragm by external stress causes some problems, because the electrode is deposited on the diaphragm formed piezoresistors. To solve these problems, piezoresistors is formed by two implantation steps. To fabricate diaphragm, the backside silicon etching step is done by immersing the wafer into TMAH solution. $30{\mu}m$ thick diaphragm is obtained. Sensitivity of the piezoresistive pressure sensor fabricated is 48.6 mV/V-psi.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.