• Journal of Mechanical Science and Technology
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• v.18 no.5
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• pp.789-797
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• 2004

The nanoscale sensing and manipulation have become a challenging issue in micro/nano-robotic applications. In particular, a feedback sensor-based manipulation is necessary for realizing an efficient and reliable handling of particles under uncertain environment in a micro/nano scale. This paper presents a piezoresistive MEMS cantilever for nanoscale force measurement in micro robotics. A piezoresistive MEMS cantilever enables sensing of gripping and contact forces in nanonewton resolution by measuring changes in the stress-induced electrical resistances. The calibration of a piezoresistive MEMS cantilever is experimentally carried out. In addition, as part of the work on nanomanipulation with a piezoresistive MEMS cantilever, the analysis on the interaction forces between a tip and a material, and the associated manipulation strategies are investigated. Experiments and simulations show that a piezoresistive MEMS cantilever integrated into a micro robotic system can be effectively used in nanoscale force measurements and a sensor-based manipulation.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.23 no.12
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• pp.1082-1089
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• 2013

3-Axis sensor measurement system is needed for measuring ride quality of elevator. But because 3-Axis piezoelectric accelerometer is expensive. We developed 3-Axis sensor system which is suitable for measuring ride quality of elevator using cheap MEMS sensor. There are two types of MEMS sensor that are piezoresistive and capacitive type. The excellence of piezoresistive type in characteristic of frequency response and noise is confirmed compare to capacitive type as a result of this paper's experiment and reference. 3-Axis system using MEMS sensor needs MEMS's proper frequency response characteristic. Additionally noise characteristic of sensor and circuit, stiffness of assembly are needed for deciding frequency range and accuracy of amplitude.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.3
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• pp.573-577
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• 2009

Piezoresistive pressure sensor have become the successfully-commercialized MEMS product and the related technologies have been well developed over the past decades. Regarding the design methodology, however, the coupled-physics FEM analyses of the transducer itself and the signal-processing circuitry design based on the conventional EDA are separated and both of the analyses were sequentially processed for the full design of the pressure sensor. For the fast and effective R&D, new design methodology is proposed in this paper where the FEM results are linked to the EDA environment and therefore most of the design works can be done in the EDA environments, which means the time-consuming FEM analyses can be minimized. In order to verify the proposed approach, a typical piezoresistive pressure sensor having the silicon diaphragm and piezoresistors was modeled and analyzed based on the proposed methodology. The verification results showed that the simulated results were matched well with the measured data within the 7% difference while the simulation time was reduced less than 5% compared to the conventional methodology. Through the proposed approach, various types of the piezoresistive pressure sensors can be developed in more effective way.

• Journal of the Korean Society of Propulsion Engineers
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• v.22 no.6
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• pp.111-117
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• 2018

In this study, an MEMS thrust measurement system was designed and a study on the performance prediction of system was performed to evaluate the performance of micro thruster. Thrust measurement system consists of beam, membrane, and piezoresistive sensor. An FEM analysis was carried out to verify the stability of the system, confirm the stress variation at the beam, and position the piezoresistive sensor. The stability of the designed system was verified by comparing the yield strength of the material with the maximum stress. The piezoresistive sensor was designed to be 20% of the length of the beam to obtain a high gauge factor. The size of the membrane and the beam of the reference model were designed to be $15mm{\times}15mm$, and $500{\mu}m{\times}500{\mu}m$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.350-354
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• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2012.10a
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• pp.402-403
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• 2012

• Journal of Mechanical Science and Technology
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• v.20 no.4
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• pp.505-512
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• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.63-70
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• 2008

In this paper, a smart sensor system for the MEMS pressure sensor was developed. A compensation algorithm and programmable calibration circuits were presented to eliminate errors caused by temperature drift of piezoresistive pressure sensors in itself. This system consisted of signal conditioning, calibration, temperature detection, microprocessor, and communication parts and these were integrated into a SOC. A RS-232 interface was employed for monitoring and control of a smart sensor system. The area of fabricated IC is $4.38{\times}3.78\;mm^2$ and a $0.35{\mu}m$ high voltage CMOS process was used. Compensation error for temperature drift of 50 KPa pressure sensors was measured into ${\pm}0.48%$ in the range of $-40^{\circ}C{\sim}150^{\circ}C$. Total power consumption was 30.5 mW.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.470-474
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• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.7-12
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• 2006

The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.