• Journal of Mechanical Science and Technology
• /
• 제18권5호
• /
• pp.789-797
• /
• 2004

The nanoscale sensing and manipulation have become a challenging issue in micro/nano-robotic applications. In particular, a feedback sensor-based manipulation is necessary for realizing an efficient and reliable handling of particles under uncertain environment in a micro/nano scale. This paper presents a piezoresistive MEMS cantilever for nanoscale force measurement in micro robotics. A piezoresistive MEMS cantilever enables sensing of gripping and contact forces in nanonewton resolution by measuring changes in the stress-induced electrical resistances. The calibration of a piezoresistive MEMS cantilever is experimentally carried out. In addition, as part of the work on nanomanipulation with a piezoresistive MEMS cantilever, the analysis on the interaction forces between a tip and a material, and the associated manipulation strategies are investigated. Experiments and simulations show that a piezoresistive MEMS cantilever integrated into a micro robotic system can be effectively used in nanoscale force measurements and a sensor-based manipulation.

• 한국소음진동공학회논문집
• /
• 제23권12호
• /
• pp.1082-1089
• /
• 2013

3-Axis sensor measurement system is needed for measuring ride quality of elevator. But because 3-Axis piezoelectric accelerometer is expensive. We developed 3-Axis sensor system which is suitable for measuring ride quality of elevator using cheap MEMS sensor. There are two types of MEMS sensor that are piezoresistive and capacitive type. The excellence of piezoresistive type in characteristic of frequency response and noise is confirmed compare to capacitive type as a result of this paper's experiment and reference. 3-Axis system using MEMS sensor needs MEMS's proper frequency response characteristic. Additionally noise characteristic of sensor and circuit, stiffness of assembly are needed for deciding frequency range and accuracy of amplitude.

• 전기학회논문지
• /
• 제58권3호
• /
• pp.573-577
• /
• 2009

Piezoresistive pressure sensor have become the successfully-commercialized MEMS product and the related technologies have been well developed over the past decades. Regarding the design methodology, however, the coupled-physics FEM analyses of the transducer itself and the signal-processing circuitry design based on the conventional EDA are separated and both of the analyses were sequentially processed for the full design of the pressure sensor. For the fast and effective R&D, new design methodology is proposed in this paper where the FEM results are linked to the EDA environment and therefore most of the design works can be done in the EDA environments, which means the time-consuming FEM analyses can be minimized. In order to verify the proposed approach, a typical piezoresistive pressure sensor having the silicon diaphragm and piezoresistors was modeled and analyzed based on the proposed methodology. The verification results showed that the simulated results were matched well with the measured data within the 7% difference while the simulation time was reduced less than 5% compared to the conventional methodology. Through the proposed approach, various types of the piezoresistive pressure sensors can be developed in more effective way.

• 한국추진공학회지
• /
• 제22권6호
• /
• pp.111-117
• /
• 2018

마이크로 추력기의 성능평가를 위해 MEMS 추력 측정 시스템을 설계하였으며, 시스템의 성능 예측에 관한 연구를 수행하였다. 추력 측정 시스템은 빔, 박막, 압저항 센서로 구성된다. 시스템의 안정성 검증과 빔의 응력 변화를 확인하고 압저항 센서의 크기 및 위치 선정을 위해 FEM 해석을 수행하였다. 재료의 허용응력과 최대응력을 비교하여 설계한 시스템들의 안정성을 검증할 수 있었다. 압저항 센서는 높은 게이지 계수를 확보하기 위해 빔의 길이의 20%로 설계 하였으며, 기준형상의 박막과 빔의 크기는 각각 $15mm{\times}15mm$, $500{\mu}m{\times}500{\mu}m$로 설계하였다.

• 한국전기전자재료학회논문지
• /
• 제33권5호
• /
• pp.350-354
• /
• 2020

In this study, a pressure sensor for each displacement was fabricated based on the silicon-based pressure sensor obtained through simulation results. Wires were bonded to the pressure sensor, and a piezoresistive pressure sensor was inserted into the printed circuit board (PCB) base by directly connecting a micro-electro-mechanical system (MEMS) sensor and a readout integrated circuit (ROIC) for signal processing. In addition, to prevent exposure, a non-conductive liquid silicone was injected into the sensor and the entire ROIC using a pipette. The packaging proceeded to block from the outside. Performing such packaging, comparing simple contact with strong contact, and confirming that the measured pulse wavelength appears accurately.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2012년도 추계학술대회 논문집
• /
• pp.402-403
• /
• 2012

• Journal of Mechanical Science and Technology
• /
• 제20권4호
• /
• pp.505-512
• /
• 2006

This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

• 대한전자공학회논문지SD
• /
• 제45권11호
• /
• pp.63-70
• /
• 2008

본 논문에서는 MEMS 압력 센서의 스마트 센서 시스템을 구현하였다. 피에조 압력센서의 온도 드리프트 문제를 해결하기 위해 외부 환경에 맞춰 시스템이 스스로 발생 오차를 제거하는 보상 알고리즘과 이에 의해 제어되는 프로그래머블한 보정 회로를 제안하였다. 시스템은 신호처리부, 보정 회로, 온도 감지부, 그리고 마이크로프로세서 및 통신부가 SOC으로 구현되었으며, RS-232 인터페이스가 시스템의 모니터링 및 제어를 위해 사용되었다. 구현된 IC의 면적은 $4.38{\times}3.78\;mm^2$이며 $0.35{\mu}m$ CMOS 공정으로 제작되었다. $-40^{\circ}C{\sim}150^{\circ}C$ 온도 범위에서 50 KPa급 MEMS 압력센서의 온도 드리프트 보상 오차는 ${\pm}0.48%$로 측정되었다. 구현된 시스템의 전력소모는 30.5mW로 측정되었다.

• 센서학회지
• /
• 제32권6호
• /
• pp.470-474
• /
• 2023

In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.

• 센서학회지
• /
• 제15권1호
• /
• pp.7-12
• /
• 2006

The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.