• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1978.1_1979.1
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• 2009

In this paper, we have proposed and demonstrated a tonometry sensor array for measuring arterial pulse pressure. A sensor module consists of 7 piezoresistive pressure sensor array. Wire-bonded connection was provided between silicon chip and lead frame. PDMS(poly-dimethylsiloxane) was coated on the sensor array to protect fragile sensor while faithfully transmitting the pressure of radial artery to the sensor. Tonometric pulse pressure can be measured by this packaged sensor array that provides the pressure value versus the output voltage.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2000.05a
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• pp.105-109
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• 2000

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor the size of the pressure sensor diaphragm have become smaller year by year and a microaccelerometer with a size less than 200-300${\mu}m$ has been realized. In this paper we study some of the micromachining processes of SOI(silicon on insulator)for the microaccelerometer and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in structural engineering discipline for design of SOI wafers. Successful thermal behaviors analysis and design of the SOI wafers based on the tunneling current concept using SOI wafer depend on the knowledge abut normal mechanical properties of the SCS(single crystal silicon)layer and their control through manufacturing process

• Structural Monitoring and Maintenance
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• v.4 no.2
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• pp.107-113
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• 2017

In this paper, we present a strain-sensitive composite skin-like film made up of piezoresistive zinc oxide (ZnO) nanorods embedded in a flexible poly(dimethylsiloxane) substrate, with added reduced graphene oxide (rGO) to facilitate connections between the nanorod clusters and increase strain sensitivity. Preparation of the composite is described in detail. Cyclic strain sensing tests are conducted. Experiments indicate that the resulting ZnO-PDMS/rGO composite film is strain-sensitive and thus capable of sensing cycling strain accurately. As such, it has the potential to be molded on to a structure (civil, mechanical, aerospace, or biological) in order to provide a strain sensing skin.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.135-141
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.1049-1050
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• 2008

It is difficult to measure the pulse wave in a short time because radial artery position and located depth are different depending on the person. In this paper, the pulse wave measurement system was developed using 3 channel piezoresistive sensor array to detect the most significant pulse wave. Augmentation Index(AI) and Heart Rate(HR) analysis are also available for predicting cardiovascular risks. The developed system is small and easy to use. And it is promising to be used as home healthcare device.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.23-27
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• 2015

In this paper, eco-friendly paper strain gauge was fabricated in the way of printing strain gauge on paper substrate, using PEDOT:PSS ink and inkjet printer technology. As a p-type conductive high polymer, PEDOT:PSS is known to be piezoresistive effect. I formed a strain gauge by connecting in parallel 5 lines of $60{\mu}m$ width printed with PEDOT:PSS. To minimize surrounding influence such as temperature, I formed wheat-stone bridge by combining 4 strain gauges (quarter-bridge strain gauge) which were made up of PEDOT:PSS 5 lines and measured. In quarter-bridge strain gauge, only two strain gauges, facing each other, arranged in strain and horizontal direction were deformed while the other two strain gauge of vertical direction were not. Therefore, quarter-bridge strain gauge showed the output of half bridge. The fabricated quarter-bridge strain gauge had output sensitivity of $105.6{\mu}V/V{\cdot}mm$ and its output linearity was relatively good.

• Journal of Sensor Science and Technology
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• v.20 no.6
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• pp.393-399
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• 2011

In this paper, we designed and fabricated the novel air flow sensor using air drag force, which can be applied to the low air flow detection. To measure the low air flow, we should enlarge the air drag force and the output signal at the given air flow. The paddle structure is applied to the device, and the device is vertically located against the air flow to magnify the air drag force. We also adapt the corrugation structure to improve the output signals on the given air velocity. The device structure is made up of the silicon nitride layer and the output signal is measured with the piezoresistive layer. The output signals from the corrugated device show the better measurement sensitivity and the response time than that of flat one. The repeated measurement also shows the stabilized signals.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.137-141
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• 2010

In this paper, we fabricated silicon piezoresistive pressure sensor with dry etching technology which used Deep-RIE and etching delay technology which used SOI(silicon-on-insulator) wafer. We improved pressure sensor offset and its temperature dependence by removing oxidation layer of SOI wafer which was used for dry etching delay layer. Sensitivity of the fabricated pressure sensor was about 0.56 mV/V${\cdot}$kPa at 10 kPa full-scale, and nonlinearity of the fabricated pressure sensor was less than 2 %F.S. The zero off-set change rate was less than 0.6 %F.S.

• Journal of Power System Engineering
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• v.5 no.4
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• pp.11-17
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• 2001

Micronization of sensor is a trend of the silicon sensor development with regard to a piezoresistive silicon pressure sensor, the size of the pressure sensor diaphragm have become smaller year by year, and a microaccelerometer with a size less than $200{\sim}300{\mu}m$ has been realized, In this paper, we study some of the bonding processes of SCS(single crystal silicon) insulator wafer for the microaccelerometer. and their subsequent processes which might affect thermal loads. The finite element method(FEM) has been a standard numerical modeling technique extensively utilized in micro structural engineering discipline for design of SCS insulator wafers. Successful temperature distribution analysis and design of the SCS insulator wafers based on the tunneling current concept using microaccelerometer depend on the knowledge about normal mechanical properties of the SCS and $SiO_2$ layer and their control through manufacturing processes.