Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Temperature compensation method of piezoresistive pressure sensor using compensating bridge

보상용 브릿지를 이용한 압저항형 압력센서의 온도보상 방법

  • 손원소 (LG반도체㈜ 제품개발 1실) ;
  • 이재곤 (현대전자㈜시스템 IC연구소 소자개발1실) ;
  • 최시영 (경북대학교 전자,전기공학부)
  • Published : 1998.05.01
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Abstract

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

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