• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.35-39
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• 2013

반도체센서의 응력에 따른 전기적 특성을 프로브 스테이션 위에서 측정하기 위해 소형 4점 굽힘 장치를 개발하였다. 4점 굽힘 장치는 $60{\times}83mm^2$의 면적을 갖는 소형 장치로 마이크로미터를 통해 정확한 변위를 인가함으로서 가해진 응력을 구할 수 있다. 유한요소해석법을 사용하여 기기의 오차를 예측하고 정밀도를 향상하였다. 실험적으로는 4점 굽힘 장치로 인가된 응력을 검증하기 위해 스트레인 게이지로 검증하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.186-189
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• 2004

Sensor used by semiconductor process produced an MAP sensor and applied to several industry. Among those sensors divided as transducer which convert physical quantity into electrical value, piezoresistive type sensor has been studied for the properties and sensitivity of piezoresistor. In this paper, the variation of seismic mass which have been functioned as actuator moving the cantilever beam analyzed the effect on distribution of resistance change ratio and supposed the optimal shape and position of piezoresistor. The resulting are following; According to the increment of seismic mass size, the value of resistance change ratio decreased caused by improve the stiffness. Y directional piezoresistor is formed in spot of 100 m apart from cantilever edge and length of that is 800$\mu$m. To increase the sensitivity, piezoresistor is made as n-type and x-direction.

• 대한전자공학회논문지
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• 제25권3호
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• pp.307-314
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• 1988

The thin, square-diaphragm silicon pressure sensor utilizing shear piezoresistance effect was designed and fabricated and its characteristics were examined. The sensor has only one diffused resistor, whereas conventional full-bridge sensor has four. Sensitivity is somewhat lower but temperature compensation is easier than the latter. The proposed sensor was fabricated with only one p-type diffused resistor of the dimension of 113x85\ulcorner\ulcornerlocated near the center of the edge of the diaphragm. The resistor was at 45\ulcornerwith the edge of the diaphragm. The sensitivity of the sensor was 36\ulcorner/V\ulcornermHg and was linear in the pressure range from 0 to 300 mmHg. The temperature coefficient without temperature compensation was 55 ppm/\ulcorner and it was decreased to about 0.17 mmHg/\ulcorner with compensation in the range from 10 to 60\ulcorner.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1381-1384
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• 2005

In these days, the piezoresistive material has been applied to various sensors in order to measure the change of physical quantities. But the relationship between the sensitivity of a sensor and the position and size of piezoresistor has rarely been studied. Therefore, this paper was focused on the distribution of the resistance change ratio on the diaphragm and bridge surface where piezoresistor would be formed, and proposed the proper size and position of piezoresistor with which the sensitivity of sensor was increased. As the width of mass and boss was increased, the distance between piezoresistors was closed and the maximum value of resistance change ratio was decreased by the increase of the structure stiffness. And according to the increment of seismic mass size, the value of resistance change ratio is decreased by increase of the structure stiffness. Y directional piezoresistor is formed in the position of $100\mu{m}\;apart\;from\;cantilever\;edge\;and\;length\;of\;that\;is\;800\mu{m}$.

• 대한전자공학회논문지
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• 제23권3호
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• pp.364-369
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• 1986

Silicon diaphragms, 10 and 20 \ulcorner-thick and 1x1 mm\ulcornerarea, have been fabricated by means of the electrochemical P-N junction etch-stop technique. The P-type diffused resistors were formed on the diaphragm, and the piezoresistance effect was examined. It was been found that the fractional variation of the resistance is dependent on the diaphragm thickness, resistor location, and resistor length, etc. The 1.2 k\ulcornerfull-brige pressure sensor with 10\ulcorner-thick diaphragm exhibits a pressure sensitivity of 42 \ulcorner/V\ulcornermHg with a temperature coefficient of 2.3 mmHg/\ulcorner, and shows a good linearity in the pressure range from 0 to 300 mmHg.

• 전기전자학회논문지
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• 제1권1호
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• pp.1-10
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• 1997

It is well-known that rectangular bulk-Si sensors prepared by etch or epi etch-stop micromachining technology are already in practical use today, but the conventional bulk-Si sensor shows some drawbacks such as large chip size and limited applications as silicon sensor device is to be miniaturized. We consider a circular-shape SOI(Silicon-On-Insulator) micro-cavity technology to facilitate multiple sensors on very small chip, to make device easier to package than conventional sensor like pressure sensor and to provide very high over-pressure capability. This paper demonstrates the cross-functional results for stress analyses(targeting $5{\mu}m$ deflection and 100MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI structures where the double SOI structure shows the most feasible deflection and small stress at various ambient pressures. Those results can be compared with the ones of circular-shape bulk-Si based sensor$^{[17]}. The SOI micro-cavity formed the sensors is promising to integrate with calibration, gain stage and controller unit plus high current/high voltage CMOS drivers onto monolithic chip.

• 센서학회지
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• 제5권5호
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• pp.31-37
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• 1996

본 연구에서는 LPCVD(저압화학기상증착)로 형성된 폴리실리콘의 전단 압저항 효과를 이론적으로 분석하고, 전단 압저항체를 응용한 압력센서를 설계 제작하여 그 특성을 연구하였다. 제작된 센서는 $1kgf/cm^{2}$의 압력과 $-20{\sim}+125^{\circ}C$의 온도범위에서 3.1mV/V의 압력감도, ${\pm}0.012%FS/^{\circ}C$의 오프셀온도계수(TCO), ${\pm}0.08%FS/^{\circ}C$의 감도온도계수(TCS)를 나타내었다. 또한, 같은 온도범위에서 ${\pm}0.2%FS$의 히스테리시스, ${\pm}1.5%FS$의 비직선성 변화를 보였다. 전단형 압력센서는 브리지형과는 달리 하나의 저항체로 이루어져 있어 브리지의 각 저항값 불일치로 인한 특성의 오차를 줄일 수 있고, 절연층 위에 폴리실리콘이 형성되어 있으므로 온도범위를 확장할 수 있는 장점을 가진다.

• 한국추진공학회지
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• 제22권6호
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• pp.111-117
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• 2018

마이크로 추력기의 성능평가를 위해 MEMS 추력 측정 시스템을 설계하였으며, 시스템의 성능 예측에 관한 연구를 수행하였다. 추력 측정 시스템은 빔, 박막, 압저항 센서로 구성된다. 시스템의 안정성 검증과 빔의 응력 변화를 확인하고 압저항 센서의 크기 및 위치 선정을 위해 FEM 해석을 수행하였다. 재료의 허용응력과 최대응력을 비교하여 설계한 시스템들의 안정성을 검증할 수 있었다. 압저항 센서는 높은 게이지 계수를 확보하기 위해 빔의 길이의 20%로 설계 하였으며, 기준형상의 박막과 빔의 크기는 각각 $15mm{\times}15mm$, $500{\mu}m{\times}500{\mu}m$로 설계하였다.