DOI QR코드

DOI QR Code

A Four-point Bending Probe Station for Semiconductor Sensor Piezoresistance Measurement

반도체센서 압저항 측정을 위한 4점 굽힘 프로브 스테이션

  • Jeon, Ji Won (Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology) ;
  • Kwon, Sung-Chan (Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology) ;
  • Park, Woo-Tae (Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology)
  • 전지원 (서울과학기술대학교 기계.자동차공학과) ;
  • 권성찬 (서울과학기술대학교 기계.자동차공학과) ;
  • 박우태 (서울과학기술대학교 기계.자동차공학과)
  • Received : 2013.12.05
  • Accepted : 2013.12.26
  • Published : 2013.12.30

Abstract

A four point bending apparatus has been developed to measure semiconductor sensor piezoresistance inside a four inch probe station. The apparatus has a footprint of $60{\times}83mm^2$ and can apply $10{\mu}m$ displacements using a vertical micrometer stage. We used finite element analysis to predict and improve the accuracy of the instrument. Finally strain gauge attached on a silicon test piece was used to experimentally verify the setup.

반도체센서의 응력에 따른 전기적 특성을 프로브 스테이션 위에서 측정하기 위해 소형 4점 굽힘 장치를 개발하였다. 4점 굽힘 장치는 $60{\times}83mm^2$의 면적을 갖는 소형 장치로 마이크로미터를 통해 정확한 변위를 인가함으로서 가해진 응력을 구할 수 있다. 유한요소해석법을 사용하여 기기의 오차를 예측하고 정밀도를 향상하였다. 실험적으로는 4점 굽힘 장치로 인가된 응력을 검증하기 위해 스트레인 게이지로 검증하였다.

Keywords

References

  1. A.A. Barlian, W.-T. Park, J.R. Mallon, A.J. Rastegar Jr and B.L. Pruitt, "Review: semiconductor piezoresistance for microsystems", Proc. IEEE, 97 513 (2009). https://doi.org/10.1109/JPROC.2009.2013612
  2. S.H. Bae, et al., "Graphene-based transparent strain sensor", Carbon, 51, 236 (2013). https://doi.org/10.1016/j.carbon.2012.08.048
  3. J.-K. Kim, E.-K. Lee, M.-S. Kim, J.-H. Lim, K.-H. Lee, and Y.-B. Park, "Interfacial Adhesion Energy of Ni-P Electroless-plating Contact for Buried Contact Silicon Solar Cell using 4-point Bending Test System", J. Microelectron. Packag. Soc., 19(1), 55 (2012). https://doi.org/10.6117/kmeps.2012.19.1.055
  4. J.-W. Kim, K.-S. Kim, H.-J. Lee, H.-Y. Kim, Y.-B. Park, and S. Hyun, "Characterization and observation of Cu-Cu Thermo-Compression Bonding using 4-point bending test system", J. Microelectron. Packag. Soc., 18(4), 11 (2011).
  5. E. Lund, T.G. Finstad, "Design and construction of a four-point bending based set-up for measurement of piezoresistance in semiconductors" Rev. Sci. Instrum. 75, 4960 (2004). https://doi.org/10.1063/1.1808917
  6. H Chung, C.-P. Tang, Y.-C. Chao, K.-F. Tseng, B.-J. Lwo, "Caibrate MOSFET Micro-Stress Sensors for Electronic Packaging", Proc. Electronics Packaging Technology Conference (EPTC), Singapore, 650 (2008).
  7. R.E. Beaty, R.C. Jacger, J.C. Suhling, R.W. Johnson, R.D. Butler, "Evaluation of piezoresistive coefficient variation in silicon stress sensors using a four-point bending test fixture", IEEE Trans. Compd. Hybrids Manuf. Technol. 15, 904 (1992). https://doi.org/10.1109/33.180057
  8. M.A. Hopcroft, W.D. Nix, and T.W. Kenny, "What is the Young's Modulus of Silicon?", J. Microelectromech S. 19(2), 229 (2010). https://doi.org/10.1109/JMEMS.2009.2039697