• 제목/요약/키워드: Piezoelectric coefficient $d_{33}$

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진공증착법을 이용한 P(VDF-TrFE) 공중합체 박막의 압전특성에 관한 연구 (A Study on the Piezoelectric Characteristic of P(VDF-TrFE) Copolymer Thin Film by Physical Vapor Deposition Method)

  • 박수홍
    • 한국진공학회지
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    • 제17권3호
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    • pp.220-225
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    • 2008
  • 본 실험은 P(VDF-TrFE) 공중합체 박막을 제조하고 압전특성을 검토하는데 있다. 또한 압전 특성 분석에서 압전 계수 $d_{33}$와 압전 전압 계수 $g_{33}$는 증착 온도가 $260{\sim}300^{\circ}C$ 까지는 32.3pC/N에서 36.28pC/N, $793{\times}10^{-3}V{\cdot}m/N$에서 $910.5{\times}10^{-3}V{\cdot}m/N$으로 증가하는 경향을 나타내었다. 이상의 실험 결과로 $300^{\circ}C$의 온도에서 P(VDF-TrFE) 공중합체 박막을 제조 할 때 최적의 특성이 나타남을 알 수 있었다. 반면에 증착온도가 $320^{\circ}C$에서 증착한 경우에는 각각 25.3pC/N, $680.3{\times}10^{-3}V{\cdot}m/N$으로 감소하였다.

빗살형 전극을 이용한 적층 세라믹 박판 작동층 IDEAL의 설계/제조/성능시험 (Design/Manufacturing/Performance-Test of Stacked Ceramic Thin Actuation Layer IDEAL Using Interdigitated Electrodes)

  • 이제동;박훈철;구남서;윤영수;윤광준
    • 한국세라믹학회지
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    • 제41권3호
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    • pp.216-220
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    • 2004
  • 본 논문은 압전세라믹의 압전상수 d$_{33}$ 를 이용한 적층 세라믹 박판 작동층 IDEAL (InterDigitated Electrode Actuation Layer)의 개발에 관한 것이다. 대부분의 박판 압전 작동층은 압전상수 d$_{31}$ 효과를 이용하고 있다. 현재 개발된 압전작동기의 성능을 향상시키기 위해 많은 연구가 수행 중에 있으며, 그 중 한 방법이 압전상수 d$_{33}$ 를 이용하는 방법이다. 압전세라믹의 압전상수 d$_{33}$ 는 압전상수 d$_{31}$ 보다 일반적으로 두배 정도이기 때문에 d$_{33}$ 작동 효과를 활용하면 작동기의 성능을 향상시킬 수 있다. 미국 MIT에서 개발된 AFC와 NASA Langley 연구소 연구팀이 개발한 LaRC-MFC$^{TM}$는 d$_{33}$ 작동 효과를 활용하였으나 빗살형 전극이 작동층 상하 표면에 부착되어 있어 완전한 d$_{33}$ 작동 효과를 활용하였다고 볼 수 없다. 본 논문에서는 빗살형 전극을 세라믹 층간에 삽입한 적층형 세라믹 박판 작동층을 설계하고 제작하였다. 제작된 작동층의 작동 스트레인을 측정하였고 LaRC-MFC$^{TM}$의 작동 스트레인과 비교한 결과, 본 연구에서 개발한 박판 세라믹 작동층이 15% 이상의 작동 스트레인을 발생시킬 수 있음을 확인하였다.

압전박막의 특성평가 (Characterization of Piezoelectric Thin Films)

  • 김동국;변금효;김일두;이치헌;박정호;최광표;김호기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.916-919
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    • 2000
  • A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.

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압전박막의 특성평가 및 표준화 (Characterization and Standardization of Piezoelectric Thin Films)

  • 김동국;지정범
    • 한국전기전자재료학회논문지
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    • 제15권12호
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    • pp.1054-1059
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    • 2002
  • A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement and standardization of both the longitudinal and the transverse piezoelectric d-coefficients, d33 and d31, of ferroelectric thin films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been introduced to acquire the piezoelectric coefficients. These results have been calibrated for both the longitudinal and 4he transverse piezoelectric d-coefficients, d33 and 431, of thin films by comparison with the virtual standard created from FEM. In this experiments, we have obtained d33 of 331pC/N and 031 of -92.2pC/N for the PZT thin films.

SnO2가 첨가된 저온소결 (Na,K,Li)(Nb,Sb,Ta)O3계 세라믹스의 유전 및 압전 특성 (Dielectric and Piezoelectric Properties of Low Temperature Sintering (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics Doped with SnO2)

  • 이광민;류주현;이지영
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.690-693
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    • 2015
  • In this paper, in order to develop excellent Pb-free composition ceramics for ultrasonic sensor. The $SnO_2$-doped ($Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3$)(abbreviated as NKL-NST) ceramics have been synthesized using the ordinary solid state reaction method. The effect of $SnO_2$-doping on their dielectric and piezoelectric properties was investigated. The ceramics doped with 0 wt% $SnO_2$ have the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33}.g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=195[pC/N]$, $d_{33}.g_{33}=5.62pm^2/N.kp=0.40$, $density=4.436[g/cm^3]$. suitable for duplex ultrasonic sensor application.

BNKZ치환된 (Na,K)NbO3계 세라믹스의 미세구조 및 압전 특성 (Microstructure and Piezoelectric Properties of (Na,K)NbO3 System Ceramics Substituted with BNKZ)

  • 한종대;류주현
    • 한국전기전자재료학회논문지
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    • 제30권10호
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    • pp.637-640
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    • 2017
  • In this study, $(1-x)(Na_{0.52}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3-x(Bi_{0.5}(Na_{0.7}K_{0.3})_{0.5}ZrO_3$ ceramics were fabricated by BNKZ substitution using a conventional solid-state method to develop excellent lead-free piezoelectric ceramics for piezoelectric actuators; their dielectric and piezoelectric properties were then investigated. All specimens were in the orthorhombic phase. $NKL-NSTO_3$ ceramics with x=0.01 showed excellent piezoelectric properties. The density (${\rho}$), piezoelectric charge constant ($d_{33}$), planar piezoelectric coupling coefficient ($k_p$), mechanical quality factor ($Q_m$), and dielectric constant (${\varepsilon}_r$) had optimized values of $4.56g/cm^3$, 208 pC/N, 0.43, 96, and 975, respectively.

O-3형 PZT/PVDF 복합재료의 압전특성에 관한 연구 (A study on the piezoelectric properties with PZT/PVDF composites of O-3 connectivity)

  • 최용;김용혁;김호기;이덕출
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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    • pp.254-256
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    • 1987
  • In this study, piezoelectric composite materials of O-3 connectivity were made by, mixing FZT ceramics with polymers, the dependence of volume % PZT and poling condition for dielectric and piezoelectric properties were investigated. The measured value of dielectric constant was dependent on the volume % PZT, which was exponentially increased with volume %PZT. Piezoelectric coefficient ($\bar{d}_{33}$) was exponentially increased with volume % PZT. Voltage coefficient ($\bar{g}_{33}$) was decreased with volume % PZT, but it was larger than that of single phase PZT ($\bar{g}_{33}$) because the dielectric constant ($\bar{\varepsilon}_{33}$) of composite materials was decreased.

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(Na,K,Li)(Nb,Sb,Ta)O3계 세라믹스의 소성시간이 압전특성에 미치는 영향 (Effect of Sintering Time on the Piezoelectric Properties of (Na,K,Li)(Nb,Sb,Ta)O3 Ceramics)

  • 김승원;류주현
    • 한국전기전자재료학회논문지
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    • 제30권4호
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    • pp.218-222
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    • 2017
  • In this paper, in order to develop excellent composition ceramics for a piezoelectric energy- harvesting device, we synthesized $0.99(Na_{0.52}\;K_{0.443}\;Li_{0.037})(Nb_{0.883}\;Sb_{0.08}\;Ta_{0.037})O_3$ + $0.01(Sr_{0.95}Ca_{0.05})TiO_3$ + $0.3\;wt%\;Bi_2O_3\;+\;0.3\;wt%\;Fe_2O_3\;+\;0.3\;wt%\;CuO$ (abbreviated as NKN-SCT) ceramics with different sintering times, using the ordinary solid-state reaction method. The effect of sintering time on the microstructure and piezoelectric properties was investigated. The ceramics with the sintering time of 7 h have the optimum values of the piezoelectric constant ($d_{33}$), piezoelectric voltage constant ($g_{33}$), planar piezoelectric coupling coefficient (kp), mechanical quality factor (Qm), and dielectric constant (${\varepsilon}r$): $d_{33}=314[pC/N]$, $g_{33}=20.07[10^{-3}mV/N]$, kp = 0.442, Qm = 93, ${\varepsilon}r=1,768$, all being suitable for a piezoelectric energy-harvesting device.

PNN 치환에 따른 PMW-PNN-PZT-BF 세라믹스의 미세구조와 압전 특성 (Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution)

  • 신상훈;류주현
    • 한국전기전자재료학회논문지
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    • 제29권2호
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    • pp.90-94
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    • 2016
  • In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

Cryogenic Behavior of Perovskite Materials

  • Paik, D.S.;Shin, H.Y.;Yoon, S.J.;Kim, H.J.;Park, C.Y.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.126-129
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    • 1999
  • Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

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