Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Cryogenic Behavior of Perovskite Materials

  • Paik, D.S. (KIST, Thin Film Technology Research Center) ;
  • Shin, H.Y. (Namseoul Univ. Dept, of Electronics Eng.) ;
  • Yoon, S.J. (KIST, Thin Film Technology Research Center) ;
  • Kim, H.J. (KIST, Thin Film Technology Research Center) ;
  • Park, C.Y. (Yonsei Univ. Dept. of Electrical Eng.)
  • Published : 1999.05.01
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Abstract

Dielectric and piezoelectric properties of perovskite materials such as La modified $Pb(Zr,Ti)O_3$ ceramics and $Pb(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3$ single crystals were investigated for cryogenic capacitor and actuator applications. Enhanced extrinsic contributions resulted in piezoelectric coefficient (d33) as high as 250 pC/N at 30 K, superior to that of PZT ($d_{33}$ ~ 100 pC/N). This cryogenic property enhancement was associated with retuning the MPB (or cryogenic temperatures. PZN-PT single crystals exhibited dramatic property improvements such as $d_{33}$ > 500 pC/N at 30 K as a result of an engineered domain state.

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