• Title/Summary/Keyword: Piezoelectric Thin Film Sensor

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LTCC 기판을 이용한 PZT 압력 센서의 제작 및 특성 연구

  • 허원영;황현석;이태용;이경천;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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    • pp.13-13
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    • 2010
  • Piezoelectric sensors are extensively used to measure force because of their high sensitivity and low cost. however, the development of device with reduced size but with improved sensitivity is highly important. Low-temperature co-fired ceramic (LTCC) is one of promising materials for this application than a silicon substrate because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of PZT thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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상온 진공 분말 분사 공정을 이용한 다층 박막 소재의 제조 및 전기적 특성 (Fabrication and Characterization of Multi-layered Thick Films by Room Temperature Powder Spray in Vacuum Process)

  • 류정호;안철우;김종우;최종진;윤운하;한병동;최준환;박동수
    • 한국전기전자재료학회논문지
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    • 제25권8호
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    • pp.584-592
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    • 2012
  • Room temperature powder spray in vacuum process, so called Aerosol deposition (AD) is a room temperature (RT) process to fabricate thick and dense ceramic films, based on collision of solid ceramic particles. This technique can provide crack-free dense thin and thick films with thicknesses ranging from sub micrometer to several hundred micrometers with very fast deposition rates at RT. In addition, this technique is using solid particles to form the ceramic films at RT, thus there is few limitation of the substrate and easy to control the compositions of the films. In this article, we review the progress made in synthesis of piezoelectric thin/thick films, multi-layer structures, NTC thermistor thin/thick films, oxide electrode thin films for actuators or sensor applications by AD at Korea Institute of Materials Science (KIMS) during the last 4 years.

단백질 측정용 SH-SAW 센서 개발 (Development of an SH-SAW Sensor for Protein Measurement)

  • 권용준;김재호;고광락;노용래
    • 한국음향학회지
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    • 제23권1호
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    • pp.1-7
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    • 2004
  • 본 연구에서는 항원-항체 결합반응을 통해 액상의 단백질 분자를 감지할 수 있는 SH형 SAW센서를 개발하였다. 측정하고자 하는 항원으로는 anti-Human-immune-globulin (anti-HigG) 단백질을, 이에 대응하는 항체로는 HigG를 채택하였다. 압전 단결정 LiTaO₃를 사용하여 100 MHz로 발진되는 센서를 제작하고, 센서의 지연선 위에 Ti/Au층을 증착하였다. 증착된 Au층 위에 SAM (self assembled monolayer)을 형성시켜서 추가되는 항원의 농도에 의한 센서의 주파수 변화를 측정하였다. 개발된 센서의 최소검출단위는 노이즈 레벨 400 Hz 이하 값에 10.8 ng/ml/Hz의 민감도를 가지며, anti-HigG 항원의 질량하중 효과에 대해 안정적인 반응을 보였다.

The Influences of Residual Stress on the Frequency of Ultrasonic Transducers with Composite Membrane Structure

  • Lee Seungmock;Kim Jong-Min;Shin Young-Eui
    • Journal of Mechanical Science and Technology
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    • 제20권1호
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    • pp.76-84
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    • 2006
  • Arrayed ultrasonic sensors based on the piezoelectric thin film (lead-zirconate-titanate: Pb($Zr_{0.52}Ti_{0.48})O_{3}$) having composite membrane structure are fabricated. Different thermal and elastic characteristics of each layer generate the residual stress during the high temperature deposition processes, accomplished diaphragm is consequently bowing. We present the membrane deflection effects originated from the residual stress on the resonant frequencies of the sensor chips. The resonant frequencies ($f_r$) measured of each sensor structures are located in the range of $87.6{\sim}111\;kHz$, these are larger $30{\sim}40\;kHz$ than the resultant frequencies of FEM. The primary factors of $f_r$ deviations from the ideal FEM results are the membrane deflections, and the influence of stiffness variations are not so large on that. Membrane deflections have the effect of total thickness increase which sensitively change the $f_r$ to the positive direction. Stress generations of the membrane are also numerically predicted for considering the effect of stiffness variations on the $f_r$.

기능성 유기 초박막을 이용한 $NO_2$ 가스센서 개발을 위한 기초 연구 (Basic Studies for the Development of the $NO_2$ Gas Sensor Using Functional Organic Ultrathin Film)

  • 손병청;임병오;김용인;손태원;신동명;주재백;정귀영;김영관;강우형;이병호
    • 한국응용과학기술학회지
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    • 제12권1호
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    • pp.125-131
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    • 1995
  • Ultra thin films of Tetra-3-hexadecylsulphamoylcopperphthalocyanine(HDSM-CuPc) were formed on various substrates by Langmuir-Blodgett method, where HDSM-CuPc was synthesized by attaching long-chain alkylamine(hexa-decylamine) to CuPc. The reaction product was identified with FT-IR, UV-visible absorption spectroscopies, elemental analysis and thin layer chromatography. The formation of Ultrathin Langmuir-Blodgett(LB) films of HDSM-CuPc was confirmed by FT-IR and UV-visible spectroscopies. A quartz piezoelectric crystal coated with LB films of HDSM-CuPc was examined as a gas sensor for $N0_2$ gas. HDSM-CuPc LB films were transferred to a quartz crystal microbalance(QCM) in the form of Z-type multilayers. Response characteristics of film-coated QCM to $NO_2$ gas concentrations over a range of $100{\sim}600ppm$ have been tested with a thickness of $5{\sim}20$ layers of HDSM-CuPc. Changes in frequency by adsorption of $NO_2$ were increased With the number of LB layers and $NO_2$ concentration, but the response time was slow.

압전체 PZT 박막을 이용한 FET형 압력 센서의 제작과 그 특성 (Fabrication and Characteristics of FET-type Pressure Sensor Using Piezoelectric PZT Thin Film)

  • 김영진;이영철;권대혁;손병기
    • 센서학회지
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    • 제10권3호
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    • pp.173-179
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    • 2001
  • 현재 사용되어지는 반도체형 압력센서에는 압저항형과 용량형이 있다. 특히 반도체 마이크로 압력센서는 크기도 작고 신호처리회로를 동일칩 위에 집적화 할 수 있어 많은 관심을 모아왔다. 그러나 이러한 형태의 센서들은 제조공정이 복잡해서 생산성이 낮다. 기존의 센서들이 가지는 단점들을 극복하기 위해 새로운 형태의 FET형 압력센서(PSFET : pressure sensitive field effect transistor)를 제안하고 그 동작특성을 조사하였다. 압력 감지 물질은 PZT(Pb(Zr,Ti)$O_3$)를 사용하였다. RF 마그네트론 스퍼터링법을 사용하여 MOSFET의 게이트 절연막 위에 PZT 압전 박막을 증착하였다. PZT의 안정적 상태인 perovskite 구조를 형성하기 위하여 PbO 분위기에서 열처리하는 기법을 도입하였다. 제작된 PSFET의 감도는 0.38 mV/mmHg이다.

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