• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1126-1127
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• 2008

A photovoltaic panel is a device that, through the photovoltaic effect, converts luminous energy into electric energy. Photovoltaic generation system used infinity of solar energy, cost of fuel is needless and there in no air pollution or waste occurrence. This paper summarizes the results of these efforts by offering a photovoltaic system structure in 30[kW] large scale applications installed in Mokpo National University dormitory roof. The status of photovoltaic system components, are inter-connection and safety equipment monitoring system will be summarized as this article. This describes configuration of utility interactive photovoltaic system which generated power supply for dormitory. In this paper represent 30[kW] utility photovoltaic system examination result.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.413-413
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• 2012

Lead sulfide (PbS) Colloidal quantum dots (CQDs) are promising material for the photovoltaic device due to its various outstanding properties such as tunable band-gap, solution processability, and infrared absorption. More importantly, PbS CQDs have large exciton Bohr radius of 20 nm due to the uniquely large dielectric constants that result in the strong quantum confinement. To exploit desirable properties in photovoltaic device, it is essential to fabricate a device exhibiting stable performance. Unfortunately, the performance of PbS NQDs based Schottky solar cell is considerably degraded according to the exposure in the air. The air-exposed degradation originates on the oxidation of interface between PbS NQDS layer and metal electrode. Therefore, it is necessary to enhance the stability of Schottky junction device by inserting a passivation layer. We investigate the effect of insertion of passivation layer on the performance of Schottky junction solar cells using PbS NQDs with band-gap of 1.3 eV. Schottky solar cell is the simple photovoltaic device with junction between semiconducting layer and metal electrode which a significant built-in-potential is established due to the workfunction difference between two materials. Although the device without passivation layer significantly degraded in several hours, considerable enhancement of stability can be obtained by inserting the very thin LiF layer (<1 nm) as a passivation layer. In this study, LiF layer is inserted between PbS NQDs layer and metal as an interface passivation layer. From the results, we can conclude that employment of very thin LiF layer is effective to enhance the stability of Schottky junction solar cells. We believe that this passivation layer is applicable not only to the PbS NQDs based solar cell, but also the various NQDs materials in order to enhance the stability of the device.

• Journal of Advanced Marine Engineering and Technology
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• v.40 no.3
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• pp.240-248
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• 2016

As a new technical approach, the achievement of an eco-environmental leisure boat with a photovoltaic system is attempted by simultaneously actuating nine photovoltaic solar panels, in association with an applied sail control system by use of wind. In this approach, the photovoltaic system consists of a solar module, an inverter, a battery, and relevant components, while the sail control device is equipped with a sail up/down and mast-turning instrument. Furthermore, this research conducts a performance evaluation of the manufactured prototype and acquires the purposed quantity value and the development purpose items. The significant items-sail up/down speed (seconds) and mast turning angle (degrees)-are evaluated during the performance test. In the process of the performance evaluation, a wind direction sensitivity of 90% and a maximum instant charging power of 900 W were also obtained. In addition, the maximum sail time is evaluated in order to acquire the optimum quantity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.131-139
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• 2016

This paper shows the series power device in the massive roof-top PVs and domestic loads. D-UPFC as the series power device controls the distribution voltage during voltage rise (or fall) condition. D-UPFC consists of the bi-directional ac-ac converter and the transformer. In order to verify the D-UPFC voltage control, the distribution model is used in the case study. D-UPFC enables the voltage control in the distribution voltage range. Dynamic voltage control from voltage rise and voltage fall conditions is performed. Scaled-down experimental test of the D-UPFC is verified the voltage control and it is well performed without high voltage spikes in the inductive load.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.631-634
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• 2001

This paper presents a maximum power point tracking without a current sensor for a small scale photovoltaic power system. The small scale photovoltaic power systems are used in parallel, and so the cost and the reliability are strongly demanded. In the proposed inverter, the current is controlled with open loop, and then the power of photovoltaic array is calculated by the equation using the voltage of the photovoltaic array. Therefore, the system can obtain the power by detecting only the voltage of the photovoltaic array. As a result, we may obtain the performance of the MPPT with a current sensor as well as with a current sensor.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.720-722
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• 2005

A photovoltaic panel is a device that, through the photovoltaic effect, converts luminous energy into electric energy. Photovoltaic generation system uses infinity of solar energy, cost of fuel is needless and there is no all pollution or waste occurrence. This paper summarizes the results of these efforts by offering a photovoltaic system structure in 50kW large scale applications installed In Chosun University dormitory roof. The status of PV system components, are inter-connection and safety equipment monitoring system will be summarized as this article. This describes configuration of utility interactive photovoltaic system which generated power supply for dormitory In this paper represent 50kw utility PV system examination result

• KIEAE Journal
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• v.12 no.6
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• pp.129-134
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• 2012

The lightshelf system, a daylighting device, has been applied to improve the visual environment by optimal light distributions and intense illumination levels of a interior. Also, The photovoltaic is one of the most important sustainable technologies appliable to architectures. This study aims to evaluate the performance of photovoltaic integrated lightshelf system. For the study, the 1/5 scaled office models were made and the field tests were experimented under clear sky conditions. The power ratio has been analyzed to evaluate the performance of photovoltaic integrated lightshelf system. As results, the power performance was high on photovoltaic lightshelf installation angle $0^{\circ}$. And the performance was reduced on 23(%) by installation angle $15^{\circ}$ and 63(%) by installation angle $30^{\circ}$.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.16-20
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• 2015

Ag addition in chalcopyrite materials is known to lead beneficial changes in aspects of structural and electronic properties. In this work, the effects of Ag alloying of $Cu(In,Ga)Se_2$-based solar cells has been investigated. Wide bandgap $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x = 0.75~0.8) films have been deposited using a three-stage co-evaporation with various Ag/(Ag+Cu) ratios. With Ag alloying the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films were found to have greater grainsize and film thickness. Device were also fabricated with the $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ (x~0.8) films and their J-V and quantum efficiency measurements were carried out. The highest-efficiency $(Ag,Cu)(In_{1-x},Ga_x)Se_2$ solar cell with Eg > 1.5 eV had an efficiency of 12.2% with device parameters $V_{OC}=0.810V$, $J_{SC}=21.7mA/cm^2$, and FF = 69.0%.