• Title/Summary/Keyword: Photovoltaic device

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A Review on the Failure Mechanism for Crystalline Silicon PV Module (결정계 PV 모듈에 대한 고장 메커니즘 검토)

  • Kim, Jeong-Yeon;Kim, Ju-Hee;Chan, Sung-Il;Lim, Dong-Gun;Kim, Yang-Seob
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.6
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    • pp.343-349
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    • 2014
  • It is summarized that potential causes of performance degradations and failure mechanisms of crystalline silicon photovoltaic (PV) modules installed in Middle East area. In addition, we also reviewed current PV module qualification test (IEC 61215) and the methods for detection of wear-out fault. The failure of PV modules in the extreme environmental conditions such as deserts is mainly due to high temperature, humidity, and dust storms. In particular, cementation phenomenon caused by combination of sand and moisture leads to rapid degradation in the performance of PV modules. In order to evaluate and guarantee the long term reliability of PV modules, specific qualification tests such as sand dust test, salt mist test and potential induce degradation test considering operating environment of PV module should be carried out.

A Study on the Plasma Enhanced Hot-wire CVD Grown Miorocrystalline Silicon Films for Photovoltaic Device Applications (태양전지 응용을 위한 플라즈마 열선 화학기상증착법으로 성장한 미세결정 실리콘에 관한 연구)

  • 유진수;임동건;고재경;박중현;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.632-635
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    • 2001
  • Microcrystalline Si films have been deposited by using five W-wire filaments of 0.5 mm diameter for hot-wire chemical vapor deposition (HWCVD). We compared the HWCVD grown films with the film exposed to transformer couple plasma system for the modification of seed layer. W-wire filament temperature was maintained below 1600$^{\circ}C$ to avoid metal contamination by thermal evaporation at the filament. Deposition conditions were varied with H$_2$dilution ratio, with and without plasma treatment. From the Raman spectra analysis, we observed that the film crystallization was strongly influenced by the H$_2$dilution ratio and weakly depended on the distance between the wire and a substrate. We were able to achieve the crystalline volume fraction of about 70% with an SiH$_4$/H$_2$ratio of 1.3%, a wire temperature of 1514$^{\circ}C$, a substrate separation distance of 4cm, and a chamber pressure of 38 mTorr. We investigated the influence of ${\mu}$c-Si film properties by using a plasma treatment. This article also deals with the influence of the H$_2$dilution ratio in crystallization modification.

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Recent Progress in Surface/Interface Defect Engineering of Perovskite for Improving Stability (페로브스카이트의 표면 및 계면 결함 제어를 통한 안정성 향상 기술 경향)

  • Kim, Min
    • Journal of Adhesion and Interface
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    • v.21 no.2
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    • pp.41-50
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    • 2020
  • Organic-inorganic metal halide perovskite has shown a great promise in photovoltaic applications because of the skyrocketing power-conversion efficiencies up to 25.2% and their potentially low production cost. However, it also has critical issue of substantial material degradation during device operation to be overcome for successful commercialization. Understanding the nature of defects and their photochemistry related to material degradation is needed. Furthermore, strategy to passivate defects in perovskite should be adopted to improve the stability of perovskite. In this article, we present predominant defects formation in perovskite that contribute to material degradations in perovskite solar cells. We then discuss how material stability can be improved through reliable defect passivation engineering.

Growth and characterization of $Bi_2O_3$ nanowires

  • Park, Yeon-Woong;Ahn, Jun-Ku;Jung, Hyun-June;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.60-60
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    • 2010
  • 1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

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Performance Evaluation of An Azimuth Tracking Prismatic Daylighting System (방위각 추적식 프리즘형 집광조명시스템 성능평가)

  • Sung, Tae-Kyung;Lee, Chung-Sik;Lee, Eul-Young;Park, Yeon-Min;Joung, Che-Bong;Kim, Byung-Chul
    • Journal of the Korean Solar Energy Society
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    • v.32 no.3
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    • pp.129-137
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    • 2012
  • This thesis introduced an azimuth tracking prismatic daylighting system. The system improved several issues of the previous passive prismatic daylighting system: low efficiency at sunrise and sunset, glare effect and polarized. The system was developed to track the movement of sun with azimuth tracking device, and it has its own power from the attached solar cells. We compared the with previous passive one in terms with system efficiency and daylighting factors(DF).

Algorithm for Preventing Malfunction and Reclosing in Grid-Connected PV Systems (연계형 태양광발전설비의 새로운 오동작 방지 및 재병입 알고리즘 제안)

  • Hwang, Min-Soo;Jeon, Tae-Hyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.7
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    • pp.70-76
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    • 2012
  • In general, the unidirectional power flow is normal in distribution feeders before activation of distributed power source such as PV. However, the interactive power flow is likely to occur in case of the power system under distributed generation. This interactive power flow can cause an unexpected effect on convectional protection coordination systems designed based only on the unidirectional power flow system. When the power line system encounters a problem, the interactive power flow can be a contributed current source and this makes the fault current bigger or smaller compared to the unidirectional case. The effect of interactive power flow is varied depending on the location of the point to ground fault, relative location of the PV, and connection method. Therefore it is important to analyse characteristics of fault current and interactive flow for various transformer connection and location of the PV. This paper proposes a method of improved protection coordination which can be adopted in the protective device for customers in distribution feeders interconnected with the PV. The proposed method is simulated and analysed using PSCAD/EMTDC under various conditions.

A Study on Power Conversion System for Photovoltaic Generation (태양광 발전용 전력변환장치에 관한 연구)

  • 박정환;장수형;이성근;안병원;김윤식
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2001.05a
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    • pp.437-442
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    • 2001
  • Recently, transformerless inverters have been studied to reduce sizes and costs of utility-connected PV systems. This paper presents a transformerless PV inverter using a two-phase boost converter of reduced ripples in input current and output voltage, low voltage stress of semiconductor device and reduced size of input reactor. And new PWM method is introduced, whose on-off time is calculated from simultaneous equation induced by fourier series. To verify a validity of the proposed transformerless inverter, computer simulation has been carried out.

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Method of Multi-level Switching Function based on FPGA (FPGA를 이용한 멀티레벨 스위칭 함수 구현 방법)

  • Lee, Hwa-Chun;Song, Gee-Seok;Park, Sung-Jun;Lee, Min-Jung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2008.10a
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    • pp.195-198
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    • 2008
  • Recently, with the growth of photovoltaic system, many researchers and companies have concerned about the multi-level inverter which has an efficiency of boosting voltage. This paper implements a multi-level switching function based on the FPGA. It is efficient to implement the switching function based on the FPGA as a program able logic device. In order to implementation the switching function, this paper synchronized with the microprocessor through the clock and synchronous signal from the microprocessor.

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유기태양전지의 장시간 안정성 향상을 위한 PEDOT:PSS층의 연구

  • Yang, Hye-Jin;Jang, So-Ra;Choe, Cheol-Ho;Choe, Ju-Hwan;Sin, Jin-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.469.1-469.1
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    • 2014
  • 일반적으로 유기전자소자의 제작에 있어서 Indium tin oxide (ITO)는 뛰어난 전기 광학적 특성을 바탕으로 가장 보편적으로 사용되는 투명전극이다. 특히 유기태양전지(Organic Photovoltaic, OPV)나 유기발광디스플레이(Organic Light Emitting Device)는 ITO 위에 PEDOT:PSS 층을 형성하여 HOMO, LUMO를 조절하고 효율을 향상시키는 역할을 수행하고 있다. 특히 ITO 위의 PEDOT:PSS는 사용되는 용제의 종류나 첨가제 등에 따라 특성이 크게 영향을 받는다. 이때 PEDOT:PSS는 일반적으로 강산성을 띄게 됨으로써 유기전자소자의 장시간 안정성을 저하시키는 원인으로 작용한다. 본 연구에서는 각각 다른 pH level을 가진 PEDOT:PSS의 시간 경과에 따라 투과도와 면저항을 측정하고 각각의 PEDOT을 사용하여 유기태양전지 소자를 제작하였다. 소자제작 30일 경과 후 소자의 효율이 감소하기는 하였으나 그 변화가 일반적으로 사용되는 pH 2의 감소보다 현저히 적었음을 알 수 있다. 이러한 pH 변화가 이를 적용한 투명전극 필름의 전기 광학적 특성인 투과도 면저항 등에는 영항을 거의 미치지 않으면서도 OPV의 효율 변화에는 큰 차이를 보이는 것을 알 수 있다.

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Electrical Characterization of Cu(InxGa1-x)(SySe2-y) Thin Film Solar Cells

  • Kim, Dahye;Kim, Ji Eun;Cho, Yunae;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.464.1-464.1
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    • 2014
  • Among numerous material candidates, Cu(InxGa1-x)(SySe2-y) (CIGS) thin films have emerged as promising material candidates for thin film solar cell applications due to the high energy conversion efficiency and relatively low fabrication cost. The CIGS thin film solar cells consist of several materials, including Mo back contacts, ZnO-based window layers, and CdS buffer layers. All these materials have different crystal structures and contain quite distinct chemical elements, and hence the device characterization requires careful analyses. Most of all, identification of the major trap states resulting in the carrier recombination processes is a key step toward realization of high efficiency CIGS solar cells. We have carried out electrical investigations of CIGS thin film solar cells to specify the major trap states and their roles in photovoltaic performance. In particular, we have used the temperature-dependent transport characterizations and admittance spectroscopy. In this presentation, we will introduce some exemplary studies of DC and AC electrical characteristics of the CIGS solar cells.

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