• Title/Summary/Keyword: Photoluminescence spectroscopy

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Spectroscopic Characteristics of Gemstones with Color Change Effect (변색 효과 보석들의 분광학적 특성)

  • Ahn, Yong-Kil;Seo, Jin-Gyo;Park, Jong-Wan
    • Journal of the Mineralogical Society of Korea
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    • v.22 no.2
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    • pp.81-86
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    • 2009
  • The luminescence and fluorescence were investigated by photoluminescence spectroscopy for six gemstones which exhibit color change effect. The shape of luminescence peaks appears different when observed by a photoluminescence spectroscopewith a 514 nm Ar laser source. However, it was not possible to observe the difference in the spectra between the natural and synthetic origins for the same type of gemstones. It was found that the photoluminescence spectrum was related to the crystal structure of the stones. Photoluminescence spectra using a 325 nm He-Cd source reveal that fluorescence is relatively strong for synthetic alexandrite, synthetic color change sapphire and natural alexandrite comparing to the rest of gemstones examined.

A New Approach to Synthesis and Photoluminescence of Silicon Nanoparticles

  • Kim, Beomsuk
    • Journal of Integrative Natural Science
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    • v.2 no.1
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    • pp.28-31
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    • 2009
  • We describe the synthesis and characterization of silicon nanoparticles prepared by the soluton reduction of SiCl4. These reactions produce Si nanoparticles with surfaces that are covalently terminated. The resultant organic derivatized Si nanoparticles as well as a probable distribution of Water-soluble Si nanoparticles are observed and characterized by photoluminescence(PL) spectroscopy. This work focuses originally on the organic- and water-soluble silicon nanoparticles in terms of the photoluminescence. Further this work displays probably the first layout of hydrogen terminated Si nanoparticles synthesized in solution at room temperature.

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The Effect of Crystallinity on the Photoluminescence of TiO2 Nanoparticles (결정성에 따른 TiO2 나노입자의 포토루미네선스 영향)

  • Han, Wooje;Park, Hyung-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.1
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    • pp.23-28
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    • 2019
  • The Titanium oxide ($TiO_2$) is an attractive ceramic material which shows non-toxic, high refractive index, catalytic activity and biocompatibility, and can be fabricated at a low cost due to its high chemical stability and large anisotropy. $TiO_2$ nanoparticles have been prepared by sol-gel method. The pH of solution can affect the $TiO_2$ crystallinity during the formation of nanoparticles. The prepared nanoparticles were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy in order to investigate their structural and photoluminescence properties. Through these analysis, the size of $TiO_2$ nanoparticles were found to be smaller than 5 nm. As the crystallinity of the nanoparticles increased, the emission of PL in the 550 nm region increased. Therefore, luminescence characteristics can be improved by controlling the crystallinity of the $TiO_2$ nanoparticles.

Study of the hydrogen concentration of SiNx film by Fourier transform infrared spectroscopy (Fourier transform infrared spectroscopy를 이용한 SiNx박막의 수소농도 연구)

  • Lee, Seok-Ryoul;Choi, Jae-Ha;Jhe, Ji-Hong;Lee, Lim-Soo;Ahn, Byung-Chul
    • Journal of the Korean Vacuum Society
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    • v.17 no.3
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    • pp.215-219
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    • 2008
  • The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at $340^{\circ}C$ using a conventional PECVD system. The compositions of Si and N in SiNx films were confirmed by using Rutherford backscattering spectroscopy (RBS) and photoluminescence (PL) analysis. The surface morphology of SiNx films was also analyzed by using atomic force microscopy (AFM). It was found that the contents of NH(at. %) is the reverse related with those of SiH corresponding to the result of FT-IR. we conclude that a quantitative analysis on SiNx films can be possible through a precise detection of the contents of H in SiNx films with a FT-IR analysis only.

Investigation of Photoluminescence Properties for Dibenzosiloles and Tetrabenzospirosilole

  • Jang, Seunghyun
    • Journal of Integrative Natural Science
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    • v.3 no.2
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    • pp.107-111
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    • 2010
  • Silicon-containing ${\pi}$-conjugated compounds, especially silacyclopentadienes (siloles), have emerged as a new class of electroactive materials with good electron transport properties in OLEDs. 9,9'-spiro-9-silabifluorene compound as well as its starting material 2,2'-dibromobiphenyl have been synthesized with higher yields. Spirosilabifluorene is expected to be an efficient host material for the blue-light emitting diodes. 9,9'-spiro-9-silabifluorene, 1,1-dichloro-1-silafluorene, and 1,1-dimethyl-1-silafluorene were characterized by $^1H$-NMR, UV/Vis and photoluminescence spectroscopy.

The Effect of Temperature on the Photoluminescence Properties of the InZnP/ZnSe/ZnS (Core/Multishell) Quantum Dots (온도에 따른 InZnP/ZnSe/ZnS (핵/다중껍질) 양자점의 형광 특성 변화)

  • Son, Min Ji;Jung, Hyunsung;Lee, Younki;Koo, Eunhae;Bang, Jiwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.443-449
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    • 2018
  • We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

Synthesis and Characterization of $CeO_2$ Powders by the Hydrothermal Process (수열합성법을 이용한 세륨산화물 나노분말의 특성 및 합성에 대한 연구)

  • Kong, Myung-Ho;Na, Han-Gil;Kim, Hyoun-Woo;Yang, Hack-Hui
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.2
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    • pp.49-54
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    • 2010
  • We have successfully synthesized $CeO_2$ nanopowders by means of the hydrothermal method, in a low temperature range of $100-200^{\circ}C$. In order to investigate the structure and morphology of the nanopowders, scanning electron microscopy and X-ray diffraction have been employed. In addition, for exploring the optical properties, Raman spectroscopy, Fourier transform infrared spectroscopy, and photoluminescence spectroscopy have been used. In the optimized condition, with the pH, velocity, and time of 4.5, 600 rpm, and 60 h, the $CeO_2$ nanopowders with a diameter ranging from 50 to 150 nm have been synthesized. The nanopowders exhibited the visible emission mainly in the blue region. With comparing the reaction time, it is revealed that the extinction of functional groups at 60 h contributed to the growth and homogenization of the $CeO_2$ powders. Since the overgrowth and agglomeration of nanopowders were found, we suggest that the cracking/growth process is more favorable mechanism than the dissolution/precipitation process.

Bottom photonic crystals-dependent photoluminescence of InGaN/GaN Quantum-Well Blue LEDs (하부 광결정에 따른 InGaN/GaN 양자우물구조의 청색발광 다이오드 발광 특성)

  • Cho, Sung-Nam;Choi, Jae-Ho;Kim, Keun-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.52-54
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    • 2008
  • The authors investigated the InGaN/GaN multi-quantum well blue light emitting diodes with the implements of the photonic crystals fabricated at the top surface of p-GaN layer or the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra for the blue light emitting diodes, which have a wavelength of 450nm. However, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 504 nm and played as a role of quality enhancement for the crystal growth of GaN thin film. The micro-Raman spectroscopy shows the improved epitaxial quality of GaN thin film.

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