• Korean Journal of Materials Research
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• v.12 no.9
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• pp.761-766
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• 2002

Fine $LaPO_4$:Tb phosphor particles with spherical shape were prepared by spray pyrolysis. The influence of the precursor type of phosphorous such as ($NH_4$)$_2$$HPO_4$, $NH_4$$H_2$$PO_4$, ($NH_4$)$_3$$PO_4$ and $H_3$$PO_4$ on the morphology and brightness of particles was investigated. As-prepared particles by spray pyrolysis had spherical shape when ($NH_4$)$_2$ $HPO_4$ and $NH_4$$H_2$$PO_4$ were used as the precursor of phosphorous. The precursor type of phosphorous affected the photoluminescence intensity of $LaPO_4$:Tb phosphor particles, but not significant. With changing the content of activator(Tb) and excess of phosphorous, the optimal composition giving the highest photoluminescence intensity was found. The spherical morphology of prepared $LaPO_4$:Tb particles was completely maintained even after the posttreatment up to $1050^{\circ}C$. When the posttreatment temperature was over $1100^{\circ}C$, the particles did not have the spherical shape anymore. However, the highest photoluminescence intensity of prepared $LaPO_4$:Tb particles was obtained at $1050^{\circ}C$. The photoluminescence characteristics of prepared $_LaPO4$:Tb under the vacuum ultraviolet(VUV) illumination was comparable with that of the commercial $Zn_2$$V_4$:Mn and (La,Ce)PO$_4$:Tb phosphor particles. At the optimal condition, the decay time of prepared spherical $LaPO_4$:Tb phosphor particles was about 6.8ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.328-329
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• 2009

This paper presents the effect of organic Ag complex sintering temperature on the MEH-PPV photoluminescence (PL) properties. MEH-PPV and organic Ag complex was coated on the glass substrate by spin coating method. The coated Ag complex was sintered in an air atmosphere. The sintering temperature was varied from 100 to $200^{\circ}C$ and sintering time was 5 min. The Ag film sintered at temperature higher than $120^{\circ}C$ shows very low sheet resistance less than $0.5\;{\Omega}{/\square}$. The coated MEH-PPV measure photoluminescence (PL) intensity at 580 nm. The PL peak was shifted to the higher wavelength with increasing the sintering temperature.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.294-298
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• 1993

CuGaSe2 단결정을 고순도(99.9999%)의 Cu, Se 원소를 화학조성비로 칭량한 후 Se을 3mole% 과잉으로 첨가하여 합성된 ingot를 사용하여 iodine(99.9999%)을 수송매체로 한 화학수송법으로 성장시켰다. 성장된 단결정은 검정색을 띠고 있었으며, 10K에서 optical energy gap이 1.755eV로 주어졌다. Ar-ion laser로 여기시켜 측정한 photoluminescence(PL) 스펙트럼으로부터 1.667eV, 1.085eV, 1.025eV에 위치한 세 개의 PL peak를 얻었다. Thermally stimulated current(TSC) 측정에서 0.660eV, 0.720eV의 deep donor level을 관측하였으며, PL peak intensity의 thermal quenching으로 구한 activation energy는 0.010eV이었다. CuGaSe2 단결정에서 PL mechanism은 edge emission 및 donor-acceptor pair recombination임을 규명했다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.208-213
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• 2002

We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2190-2194
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• 2010

Development of the methods to organize zeolite microcrystals into closely packed and uniformly aligned monolayers on various substrates have been pursued viewing microparticles as a novel class of building blocks. We now report that the vertically aligned zeolite monolayer can be applied as novel supramolecularly organized systems for anisotropic photoluminescence in high dichroic ratio, to study energy transfer dynamics between the internal and external fluorophores, and to develop zeolite-based advanced materials. Study of polarized fluorescence spectroscopy and angle-dependent intensity change with dye molecules in different surroundings further provides insight into molecular interactions that can be used for the future design of optoelectronic device in nanometer size. In addition, this report shows that isolating of organic dye through surface treatment is crucial for preventing the egress of the incorporated dye molecules from the channels of zeolite to the solution and to enhance the anisotropic luminescence.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.561-564
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• 2008

$Ba_{1-x}M_xGa_2S_4:Eu^{2+}$ (M = Ca, Sr) phosphor was prepared for white light emitting diodes application. Photoluminescence (PL) emission and excitation bands were red-shifted with increase of Ca and Sr content due to the crystal field effect. Moreover, the PL intensity under 450 nm was increased by substitution of Ca and Sr.

• Journal of the Korean Ceramic Society
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• v.45 no.2
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• pp.126-131
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• 2008

In this study, we prepared zirconia gel by the sol-gel method and investigated its photoluminescence properties by varying pyrolysis temperature. The addition of acetic acid into a Zr-alkoxide solution resulted in forming the bidentate ligands with Zr ions and producing a stable gel. At the pyrolysis temperature of $350^{\circ}C$, the zirconia nanocrystals with tetragonal structure gradually appeared in the gel. The PL intensity of the zirconia gel increased with increasing the pyrolysis temperature up to $350^{\circ}C$, but decreased above the temperature. Concurrently, its PL peak wavelength continuously shifted from ${\sim}440\;nm$ to ${\sim}550\;nm$ with the temperature. The PL characteristics of the zirconia gels were closely associated with decomposition of residual organic groups, the formation of the zirconia nanocrystals, and the tetragonal to monoclinic phase transformation.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.401-407
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• 2006

ZnO is well-known as a promising material for optical communication systems and electronic displays. ZnO:Er thin films were deposited on c-plane sapphire substrates by rf magnetron sputtering, and the effects of sputtering parameters and the annealing conditions on the luminescence in the visible range were investigated. Luminescent properties depended on the crystallinity of films and annealing atmosphere. Highly c-axis oriented ZnO:Er films showed a strong emission band at 465 nm and a weak emission at 525 nm due to the energy transition of $^{4}I_{15/2}-^{4}F_{5/2}\;and\;^{4}I_{15/2}-^{2}H_{11/2}$, respectively. ZnO:Er thin films annealed at air atmosphere were superior to those annealed in $H_2$ in photoluminescence intensity.

• Transactions of the Society of Information Storage Systems
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• v.9 no.1
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• pp.1-4
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• 2013

Graphene and Graphene oxide have intense interest in fields such as physics, chemistry, and materials science, among others. They are the promising material for solving the current limitation that organics have barely luminescence. We observed variation of photoluminescence on graphene oxide based solution with Gold nanoparticle. Gold nanoparticles lead to shift the peak wavelength of graphene oxide and to enhance the photoluminescence intensity totally. This shows the possibility that control the luminescence property of graphene oxide by adding gold nanoparticle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.