• Journal of Surface Science and Engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Journal of Powder Materials
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• v.15 no.2
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• pp.136-141
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• 2008

The mechanochemical process were employed to prepare the red phosphors (Y,Gd)$BO_3:Eu^{3+}$. The main factors affecting particle size, particle distribution, and luminescent properties of the product were investigated in details. Particles sized around 200-600 nm are formed after intensive milling. The phosphors were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectrum. Results revealed that phosphors with different morphology, small particle size and high luminescence intensity could be obtained by mechanochemical process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.753-758
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• 2018

We investigated annealing effects of seed layers on the properties of ZnO nanorods grown on the seed layers. ZnO nanorods were grown by a hydrothermal method. ~100 nm-thick ZnO films were sputtered on oxidized Si wafers and quartz as seed layers. The ZnO films were annealed at $400^{\circ}C$, $600^{\circ}C$, and $800^{\circ}C$, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 3 hours in the mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine. X-ray diffraction was carried out to estimate the crystallinity and strain of ZnO films and nanorods. A field emission scanning electron microscope was employed to observe the morphology of the films and nanorods. PL(photoluminescence) measurements were conducted with 266 nm light. It was found that the annealing of seed layers increase the growth rate of nanorods, and change compressive strain of nanorods to tensile strain. The intensity of PL in the UV region reduced by using the annealed seed layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.24-27
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• 2004

ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.489-490
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• 2006

The Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were synthesized by Sol-gel method. The luminescence, formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG phase can form through sintering at $1000^{\circ}C$ for 2h. This temperature is much lower than that required to synthesize YAG phase via the conventional solid state reaction method. There were no intermediate phases such as YAP(Yttrium Aluminum Perovskite, $YAlO_3$) and YAM(Yttrium Aluminum Monoclinic, $Y_4Al_2O_9$) observed in the sintering process. The powders absorbed excitation energy in the range 410~510nm. Also, the crystalline YAG:Ce showed broad emission peaks in the range 480~600nm and had maximum intensity at 528nm.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.37-41
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• 2010

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.318-324
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• 2007

We report on a strong violet luminescence emitted from the ZnO:Al films grown on glass substrate by radio-frequency magnetron sputtering. The growth of high-quality thin films and their optical properties are controlled by adjusting the mixture ratio of Ar and $O_2$, which is used as the sputtering gas. The crystallinity of the films is improved as the oxygen flow ratio is decreased, as evidenced in both x-ray diffractometer and atomic force microscope measurements. As for the violet luminescence measured by photoluminescence (PL) spectroscopy, the peak energy and intensity of the PL signal are decreased with increasing the oxygen flow ratio. The peak energy of the violet PL spectrum for the thin film with an oxygen flow ratio of 50 % is almost constant, regardless of the increase of laser Power and temperature. These results indicate that the violet PL signal is probably due to defects related to interstitial Zn atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.14-17
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• 2010

$ZnGa_2O_4$ powder were prepared by combustion method and $Mn^{2+}$ ions, a green luminescence activator, and $Cr^{3+}$ ions, a red luminescence activator were separately doped into $ZnGa_2O_4$. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and photoluminescence (PL). The various $ZnGa_2O_4$ peaks, with the (311) main peak, appeared at all sintering temperature XRD patterns. The PL specctrums of $ZnGa_2O_4$ powder showed main peak of 425 nm, and maximum intensity at the sintering temperature of $1200^{\circ}C$. SEM images shown that nano sized particles(about 200 nm) were of spherical shape. The characteristics of $ZnGa_2O_4$ containing 0.004 mol $Mn^{2+}$(505 nm, green) and $ZnGa_2O_4$ containg 0.002 mol $Cr^{3+}$ (696 nm, red) were shown to be the best.

• Current Applied Physics
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• v.18 no.11
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• pp.1359-1367
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• 2018

In this work, we investigated the spectroscopic properties of $LiY_xSr_yZrO_{3+{\alpha}:Eu^{3+}$, a red emitting nanophosphor based on $SrZrO_3$ perovskite. The synthesis process was an auto-combustion process. X-ray diffractograms show the orthorhombic structure of $SrZrO_3$. Photoluminescence (PL) excitation spectra display a split charge transfer band revealing the presence of two possible sites for the $Eu^{3+}$ ions. The emission spectra at 231 nm excitation illustrate the dominance of the $^5D_0-^7F_1$ transition, which is an indication that the smaller sized $Eu^{3+}$ ions are mostly situated at the more ordered (symmetric) $Sr^{2+}$ sites. The emission spectra at 292 nm & 397 nm excitations show the dominance of $^5D_0-^7F_2$ transition which suggests some of the $Eu^{3+}$ ions are also situated at the distorted $Zr^{4+}$ sites. Both the intensity parameters, asymmetry ratio and the decay lifetimes of the nanophosphors show dependence on $Y^{3+}$ concentration, signifying a modification in the host structure. Maximum quantum efficiency value of ${\approx}46%$ was obtained for the nanophosphors which indicate the need for improvement for practical applications. CIE coordinates show the suitability of this phosphor for both red emission in LED and as a complementary colour for white LED applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.280.1-280.1
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• 2016

Generally InGaN/GaN green light emitting diode (LED) exhibits the low quantum efficiency (QE) due to the large lattice mismatch between InGaN and GaN. The QE of InGaN-based multiple quantum wells (MQWs) is drastically decreased when an emission wavelength shifts from blue to green wavelength, so called "green gap". The "green gap" has been explained by quantum confined Stark effect (QCSE) caused by a large lattice mismatch. In order to improve the QE of green LED, undoped graded short-period InGaN/GaN superlattice (GSL) and Si-doped GSL (SiGSL) structures below the 5-period InGaN/GaN MQWs were grown on the patterned sapphire substrates. The luminescence properties of InGaN/GaN green LEDs have been investigated by using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The PL intensity of SiGSL sample measured at 10 K shows stronger about 1.3 times compared to that of undoped GSL sample, and the PL peak wavelength at 10 K appears at 532 and 525 nm for SiGSL and undoped GSL, respectively. Furthermore, the PL decay of SiGSL measured at 10 K becomes faster than that of undoped GSL. The faster decay for SiGSL is attributed to the increased wavefunction overlap between electron and hole due to the screening of piezoelectric field by doped carriers. These PL and TRPL results indicate that the QE of InGaN/GaN green LED with GSL structure can be improved by Si-doping.