• 제목/요약/키워드: Photoluminescence analysis

검색결과 165건 처리시간 0.023초

La2O3-CaF2-Al2O3-SiO2 계 oxy-fluoride 결정화 유리의 광 발광 특성 (Photoluminescence properties of oxy-fluoride glass-ceramics of La2O3-CaF2-Al2O3-SiO2 system)

  • 하태완;강승구
    • 한국결정성장학회지
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    • 제31권2호
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    • pp.84-88
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    • 2021
  • 레이저, 광학센서 등에 사용되고 있는 La2O3-CaF2-Al2O3-SiO2 계 유리에 희토류 물질을 첨가하였을 때, 열처리 온도에 따른 결정화유리의 발광 특성 변화에 대하여 연구하였다. 결정화유리를 얻기 위한 열처리 조건은 비등온 열분석을 통해 얻었으며, 열처리 온도에 따른 결정성장 정도 및 생성된 결정상 종류를 파악하기 위해 XRD 분석을 진행하였다. Scherrer's equation을 이용한 결과, 결정화유리 내부에 25~40 nm 크기의 결정들이 생성된 것으로 계산되었다. Photoluminescence (PL) 분석결과, 660~670℃에서 1시간 열처리 된 시편이 가장 우수한 PL 강도를 보였으며, CIE 색좌표계 분석결과, 열처리 유무와 관계없이 모든 결정화유리 시편들은 red-orange 빛을 발광하는 것으로 나타났다.

Synthesis and Characterization of One-Dimensional GaN Nanostructures Prepared via Halide Vapor-Phase Epitaxy

  • Byeun, Yun-Ki;Choi, Do-Mun;Han, Kyong-Sop;Choi, Sung-Churl
    • 한국세라믹학회지
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    • 제44권3호
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    • pp.142-146
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    • 2007
  • High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

Poly(3-hexylthiophene)의 PL 발광 메카니즘에 관한 연구 (A Study on the Mechanism of Photoluminescence in Poly(3-hexylthiophene))

  • 김주승;서부완;구할본
    • 한국전기전자재료학회논문지
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    • 제14권2호
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    • pp.133-138
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    • 2001
  • We studied the optical properties of poly(3-hexylthiophene) for applying to the emitting material of organic electro luminescent device. The infrared spectrum and NMR of synthesized polymer gave good evidence for the conjugation of 3-hexylthiophene monomer unit. We confirmed that poly(3-hexylthiophene) contains the HT(head-to-tail)-HT(head-to-Tail) linkage larger than 65% based on NMR analysis. FTIR and raman spectroscopy show that poly(3-hexylthiophene) has two main vibration levels which have an energy about 0.18eV and 0.36eV. Electronic absorption spectra shifted to the shorter wavelength with increasing temperature, which is related to a conformational transition of the polymer. Photoluminescence spectrum generated at low temperature(10K) is separated at 669nm, 733nm and 812nm that it's because of phonon energy generated from the lattice vibration.

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rf 마그네트런 스퍼터링법으로 Si 기판위에 증착한 ZnO 박막의 결정성과 photoluminescence 특성에 대한 Zn 완충층 두께의 영향 (Effects of ZnO Buffer Layer Thickness on the Crystallinity and Photoluminescence Properties of Rf Magnetron Sputter-deposited ZnO Thin Films)

  • 조용준;박안나;이종무
    • 한국재료학회지
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    • 제16권7호
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    • pp.445-448
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    • 2006
  • Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Fabrication of SnO2/Zn Core-shell Nanowires and Photoluminescence Properties

  • Kong, Myung Ho;Kwon, Yong Jung;Cho, Hong Yeon;Kim, Hyoun Woo
    • Applied Science and Convergence Technology
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    • 제23권5호
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    • pp.301-307
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    • 2014
  • We have fabricated $SnO_2$/Zn core-shell nanowires by employing a sputtering technique with a Zn target. Scanning electron microscopy indicated that the surface of the nanowires became rougher by the coating. X-ray diffraction of the coated nanowires exhibited the hexagonal Zn diffraction peaks. TEM image of coated structures showed that shell layer was mainly comprised of hexagonal Zn phase. EDX spectra suggested that the shell layer consisted of Zn elements. The photoluminescence spectrum of the coated nanowires in conjunction with Gaussian fitting analysis revealed that the emission was disconvoluted with three Gaussian functions, which are centered at 2.1 eV in the yellow region, 2.4 eV in the green region, and 3.3 eV in the ultraviolet region. We speculated the possible mechanisms of these emission peaks.

Polarization Ellipticity of Micro-photoluminescence in a Single GaAs/AlGaAs Quantum Ring

  • Kim, Minju;Jang, Juyeong;Lee, Seunghwan;Song, Jindong;Kyhm, Kwangseuk
    • Current Optics and Photonics
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    • 제5권1호
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    • pp.72-76
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    • 2021
  • The polarized micro-photoluminescence spectrum was analyzed to investigate the anisotropic localized states in a single GaAs quantum ring. An energy difference of ~0.1 meV was observed from the perpendicularly polarized spectrum measured by a pair of linear analyzers. Spectral dependence of the polarized emission was also characterized in terms of rotation and ellipticity angles using four Stokes parameters. While the rotation angle indicates the symmetric axis of an anisotropic quantum ring with a small variation (± 2°), the ellipticity angle varies from 7.4° down to -2.5°. We conclude that optical anisotropy and birefringence are induced by the crescent-like lateral shape of localized states.

Defect Analysis via Photoluminescence of p-type ZnO:N Thin Film fabricated by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Park, Choon-Bae
    • 한국전기전자재료학회논문지
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    • 제20권3호
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    • pp.202-206
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    • 2007
  • ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

단결정 MnF2(1.5% EuF3)의 Photoluminescence (Photoluminescence of the Single Crystal MnF2(1.5% EuF3))

  • 권순혁;남균;김철구
    • 한국자기학회지
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    • 제17권1호
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    • pp.1-5
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    • 2007
  • Rutile 구조를 가진 반강자성체 $MnF_2$와 단결정 $MnF_2(1.5%\;EuF_3)$의 Infra-Red 흡수 스펙트럼과 Photoluminescence 측정을 했다. 측정된 Data의 분석을 통해서 $EuF_3$가 1.5% 첨가된 $MnF_2$와 순수한 $MnF_2$의 광학적 성질의 차이를 밝혀내고, Eu의 첨가에 의해 나오는 PL은 $Eu^{3+}$의 f-d 전이에 의한 것임을 확인했다.

결정성에 따른 TiO2 나노입자의 포토루미네선스 영향 (The Effect of Crystallinity on the Photoluminescence of TiO2 Nanoparticles)

  • 한우제;박형호
    • 마이크로전자및패키징학회지
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    • 제26권1호
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    • pp.23-28
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    • 2019
  • 타이타니아 ($TiO_2$)는 독성이 없고 매우 높은 굴절률, 촉매 활성 및 생체 적합성을 지니고 있으며 화학적 안정성이 있고 높은 이방성을 갖는 저렴한 재료로써 다양한 분야에서 각광받고 있는 세라믹 소재이다. 이러한 $TiO_2$를 sol-gel법을 이용하여 나노입자화 하였다. 나노입자 형성중에 pH를 조절하여 $TiO_2$의 결정성을 제어하였다. 합성된 나노입자는 엑스선 회절분석법, 퓨리에 분광기(Fourier transform infrared), 전계방사형 주사전자현미경(field emission scanning electron microscopy)과 포토루미네선스(photoluminescence spectroscopy)를 이용하여 분석하였다. 합성된 $TiO_2$ 나노입자는 5 nm 이하의 크기를 갖는 것을 확인하였다. 나노입자의 결정성이 증가됨에 따라 550 nm 영역의 발광세기가 증가함을 확인하였다. 이러한 결과로 $TiO_2$ 나노입자의 결정성 조절을 통한 발광 특성 조절을 기대할 수 있다.

8배위 터븀 (III) 착화합물의 합성과 Photoluminescence 특성 (Photoluminescence properties of eight coordinated terbium(III) complexes)

  • 윤명희;김연희;최원종;장주환;최성호
    • 분석과학
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    • 제24권6호
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    • pp.451-459
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    • 2011
  • 3종의 8배위 터븀 착화합물 [tris (2-pyrazinecarboxylato) (phenanthroline) terbium (III), tris (5-methyl-2-pyrazinecarboxylato) (phenanthroline) terbium(III) 및 tris (2-picolinato) (phenanthroline) terbium (III)]을 합성하고, 이 화합물을 FT-IR, UV 및 XPS 사용하여 특성평가 하였다. 또한, PL 스펙트라를 통하여 합성된 터븀 착화합물은 강한 녹색 형광을 방출하는 것을 확인하였으며, 시간 분해 분광분석기를 통하여 합성된 터븀 착화합물의 형광 반감기가 0.87 ms 및 1.0 ms임을 알았고, 열분석을 통하여 합성된 터븀 착화합물의 열안정성은 $333-379^{\circ}C$ 나타내는 것을 확인하였다. CV를 통하여 합성된 터븀 착화합물의 경우 HOMO-LUMO 에너지 차이가 4.26~4.41 eV를 나타냈는데, 이것은 UV-visible 스펙트라에서 얻은 값과 유사한 값임을 확인하였다. 따라서, 제조된 터븀 착화합물은 초록색을 발광하는 디바이스 재료로 사용할 수 있다.