Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effects of ZnO Buffer Layer Thickness on the Crystallinity and Photoluminescence Properties of Rf Magnetron Sputter-deposited ZnO Thin Films

rf 마그네트런 스퍼터링법으로 Si 기판위에 증착한 ZnO 박막의 결정성과 photoluminescence 특성에 대한 Zn 완충층 두께의 영향

  • Cho, Y.J. (Department of Material Science & Engineering, Inha University) ;
  • Park, An-Na (Department of Material Science & Engineering, Inha University) ;
  • Lee, Chong-Mu (Department of Material Science & Engineering, Inha University)
  • Published : 2006.07.27
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Abstract

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

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References

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